KR960024602A - Thin film transistor liquid crystal display device and manufacturing method - Google Patents
Thin film transistor liquid crystal display device and manufacturing method Download PDFInfo
- Publication number
- KR960024602A KR960024602A KR1019940035629A KR19940035629A KR960024602A KR 960024602 A KR960024602 A KR 960024602A KR 1019940035629 A KR1019940035629 A KR 1019940035629A KR 19940035629 A KR19940035629 A KR 19940035629A KR 960024602 A KR960024602 A KR 960024602A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- source
- silicon layer
- amorphous silicon
- black matrix
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 7
- 239000010409 thin film Substances 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract 19
- 239000002184 metal Substances 0.000 claims abstract 19
- 239000010408 film Substances 0.000 claims abstract 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 13
- 239000011159 matrix material Substances 0.000 claims abstract 12
- 238000005530 etching Methods 0.000 claims abstract 7
- 239000010407 anodic oxide Substances 0.000 claims abstract 4
- 239000003990 capacitor Substances 0.000 claims abstract 4
- 238000007743 anodising Methods 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims abstract 2
- 239000011521 glass Substances 0.000 claims abstract 2
- 230000000873 masking effect Effects 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 2
- 238000002048 anodisation reaction Methods 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910003070 TaOx Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
이 발명은 박막트랜지스터 액정 디스플레이 소자 및 제조방법에 관한 것으로서, 스토리지 캐패시터를 복층화시키기 위한, 유리판 위에 각 화소에 독립된 블랙 매트릭스를 형성하는 단계와 ; 상부 배선간의 쇼트를 방지하기 위하여 절연막을 형성하는 단계와 ; 양극 산화가 가능한 물질로 게이트메탈을 형성하는 단계와 ; 1차 양극 산화막을 형성하는 단계와 ; 아몰퍼스 실리콘층 및 n+아몰퍼스 실리콘층을 연속적으로 적층하는 단계와 ; 액티브 패턴을 형성하는 단계와 ; 컨택트 패턴을형성하는 단계와 ; 소오스/드레인 메탈을 형성하는 단계와 ; 소오스/드레인 패턴을 형성하는 단계와 ; n+아몰퍼스실리콘층을 소오스/드레인 패턴 마스크로 하여 식각하는 단계와 ; 상기 소오스 메탈을 포토 레지스트로 마스킹하고 양극 산화하는 단계와 ; 화소 전극을 형성하는 단계와 ; 상기 화소전극을 사진 및 식각 기법으로 화소 전극 패턴을 형성하는 단계로 이루어진 것을 특징으로 하는 액정 디스플레이의 박막트랜지스터 소자 및 그 제조 방법에 관한 것이다.The present invention relates to a thin film transistor liquid crystal display device and a manufacturing method, comprising: forming an independent black matrix on each pixel on a glass plate for multilayering a storage capacitor; Forming an insulating film to prevent a short between the upper wirings; Forming a gate metal from a material capable of anodizing; Forming a primary anodic oxide film; Sequentially depositing an amorphous silicon layer and an n + amorphous silicon layer; Forming an active pattern; Forming a contact pattern; Forming a source / drain metal; Forming a source / drain pattern; etching the n + amorphous silicon layer using a source / drain pattern mask; Masking and anodizing the source metal with a photoresist; Forming a pixel electrode; A thin film transistor element of a liquid crystal display, and a method of manufacturing the same, comprising the steps of forming a pixel electrode pattern on the pixel electrode by photo and etching techniques.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 이 발명의 바람직한 실시예에 따른 박막트랜지스터 액정 디스플레이 소자의 화소를 나타낸 평면도이고, 제4도의 (가)∼(자) 는 이 발명의 바람직한 실시예에 따른 박막트랜지스터 액정 디스플레이 소자의 공정 순서도이다.2 is a plan view showing a pixel of a thin film transistor liquid crystal display device according to a preferred embodiment of the present invention, Figure 4 (a) to (i) is a process flow chart of a thin film transistor liquid crystal display device according to a preferred embodiment of the present invention to be.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940035629A KR0139375B1 (en) | 1994-12-21 | 1994-12-21 | Thin film transistor liquid crystal display element and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940035629A KR0139375B1 (en) | 1994-12-21 | 1994-12-21 | Thin film transistor liquid crystal display element and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960024602A true KR960024602A (en) | 1996-07-20 |
| KR0139375B1 KR0139375B1 (en) | 1998-06-15 |
Family
ID=19402673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940035629A KR0139375B1 (en) | 1994-12-21 | 1994-12-21 | Thin film transistor liquid crystal display element and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0139375B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101419235B1 (en) * | 2007-12-26 | 2014-07-15 | 엘지디스플레이 주식회사 | Liquid Crystal Display Device and Method for Manufacturing the Same |
-
1994
- 1994-12-21 KR KR1019940035629A patent/KR0139375B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0139375B1 (en) | 1998-06-15 |
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| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080227 Year of fee payment: 11 |
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