KR960018738A - 박막 트랜지스터 액정표시장치의 단위화소 - Google Patents

박막 트랜지스터 액정표시장치의 단위화소 Download PDF

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KR960018738A
KR960018738A KR1019940031969A KR19940031969A KR960018738A KR 960018738 A KR960018738 A KR 960018738A KR 1019940031969 A KR1019940031969 A KR 1019940031969A KR 19940031969 A KR19940031969 A KR 19940031969A KR 960018738 A KR960018738 A KR 960018738A
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South Korea
Prior art keywords
electrode
unit pixel
gate line
liquid crystal
crystal display
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KR1019940031969A
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English (en)
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KR0174035B1 (ko
Inventor
황성연
남동현
김태곤
서영우
염선민
Original Assignee
엄길용
오리온전기 주식회사
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Priority to KR1019940031969A priority Critical patent/KR0174035B1/ko
Publication of KR960018738A publication Critical patent/KR960018738A/ko
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Publication of KR0174035B1 publication Critical patent/KR0174035B1/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

본 발명은 박막트랜지스터 액정표시장치의 단위화소에 관한 것으로서, 투명기판상에 한방향으로 연장되어 있는 게이트라인을 형성하고, 상기 게이트라인과는 다른 방향으로 연장되진 데이타라인을 형성하며, 상기 게이트라인과 데이타라인이 형성하는 블럭내에 화소전극을 형성하고, 상기 화소전극의 주변에 띠형상으로 전하저장전극을 형성하며, 채널이 되는 반도체층 패턴으로 게이트전극과 중첩되게 형성하되 상기 전하저장전극과도 중첩되도록 일측을 길게 연장하여 형성하고 상기 반도체층 패턴의 일측을 화소전극과 연결하여 또하나의 전하저장전극으로 사용하였으므로, 상기 전하저장전극이 차지하는 면적을 감소시킬 수 있어 LCD의 개구율이 증가된다.

Description

박막 트랜지스터 액정표시장치의 단위화소
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 박막 트랜지스터 액정표시장치의 단위화소의 레이아웃도.
제2도는 제1도에서의 선A-A에 따른 단면도.
제3도는 본 발명에 따른 박막 트랜지스터 액정표시장치의 단위화소의 등가회로도.

Claims (6)

  1. 투명기판상에 일정방향으로 연정되어 있는 게이트라인과, 상기 게이트라인의 일측이 돌출되어 있는 게이트라인과, 상기 게이트라인과는 다른 방향으로 연장되어 있는 데이타 라인과, 상기 게이트라인과 데이타라인에 의해 정의되는 블럭의 내측에 형성되어 있는 화소전극과, 상기 게이트라인과 평행하게 연장되어 있는 공통전극과, 상기 화소전극의 주변에 띠현상으로 형성되며, 상기 공통전극과 연결되는 전하저장전극과, 상기 게이트전극과 중첩되며, 상기 전하저장전극과 중첩되도록 연장되어 있어 있는 반도체층 패턴과, 상기 데이타라인의 일측에서 돌출되어 상기 반도체층 패턴의 일측과 접촉되는 소오스전극과 상기 반도체층 패턴의 타측과 접촉되어 화소전극과 연결되는 드레인전극을 구비하는 박막트랜지스터 액정표시장치의 단위화소.
  2. 제1항에 있어서, 상기 투명기판이 석영 또는 유리재질로 형성되어 있는 것을 특징으로 하는 박막트랜지스터의 액정표시장치의 단위화소.
  3. 제1항에 있어서, 상기 반도체층 패턴을 비정질 또는 다결정실리콘으로 형성되어 있는 것을 특징으로 하는 박막트랜지스터의 액정표시장치의 단위화소.
  4. 제1항에 있어서, 상기 게이트전극 및 게이트라인이 다결정실리콘, Ti, Cr 및 Al로 이루어지는 군에서 임의로 선택되는 하나의 물질로 형성되는 것을 특징으로 하는 박막트랜지스터의 액정표시장치의 단위화소.
  5. 제1항에 있어서, 상기 데이타 라인과 소오스 및 드레인전극이 Ti, Cr 및 Al들 중 어느 하나로 형성되는 것을 특징으로 하는 박막트랜지스터의 액정표시장치의 단위화소.
  6. 제1항에 있어서, 상기 전하저강전극이 비정질 또는 다결정실리콘층을 형성되어 있는 것을 특징으로 하는 박막트랜지스터의 액정표시장치의 단위화소.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940031969A 1994-11-30 1994-11-30 박막트랜지스터의 액정표시장치의 단위화소 KR0174035B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940031969A KR0174035B1 (ko) 1994-11-30 1994-11-30 박막트랜지스터의 액정표시장치의 단위화소

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Application Number Priority Date Filing Date Title
KR1019940031969A KR0174035B1 (ko) 1994-11-30 1994-11-30 박막트랜지스터의 액정표시장치의 단위화소

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KR960018738A true KR960018738A (ko) 1996-06-17
KR0174035B1 KR0174035B1 (ko) 1999-03-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438964B1 (ko) * 1996-10-02 2004-12-29 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438964B1 (ko) * 1996-10-02 2004-12-29 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법

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