KR960015705A - Method of manufacturing photoresist pattern of semiconductor device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photoresist pattern of a semiconductor device, wherein a polymer is formed on a photoresist by a vapor phase prime method by using a substance that improves adhesion between the semiconductor substrate and the photoresist before or after the soft-baked chemically amplified photoresist. After forming the layers and proceeding to the subsequent process to form a chemically amplified photosensitive film pattern, the formation of an insoluble layer of the photosensitive film by the air pollution source is prevented, the process is simple, and the T-top phenomenon or bridge between patterns is prevented The collection rate and reliability of device operation can be improved.

Description

Method of manufacturing photoresist pattern of semiconductor device

As this is a public information case, the full text was not included.

Claims (9)

Forming a chemically amplified photosensitive film on a semiconductor substrate, selecting and exposing the chemically amplified photosensitive film, PEB of the chemically amplified photosensitive film, and a portion of the chemically amplified photosensitive film that is not scheduled as a pattern. A method for producing a photosensitive film pattern of a semiconductor device, the method comprising: removing and forming a chemically amplified photosensitive film pattern, wherein the polymer is used to polymerize carbon on the chemically amplified photosensitive film before or after the selective exposure process of the chemically amplified photosensitive film. A photosensitive film pattern manufacturing method of a semiconductor device comprising the step of forming a. The method of claim 1, wherein the chemically amplified photosensitive film is exposed to a G or I line, an E beam, or an X-ray. The method of manufacturing a photosensitive film pattern of a semiconductor device according to claim 1, wherein the polymer layer is formed to a thickness of about 10 to 800 GPa. The method of claim 1, wherein the polymer layer is formed of one material arbitrarily selected from the group consisting of HMDS, TMDS, TMSDMA, and TMSDEA. The method of claim 1, wherein the polymer layer is formed by a gas phase prime method. The method of claim 5, wherein the vapor phase prime step is performed at a temperature of about room temperature to about 120 ° C. 7. 6. The method of claim 5, wherein the vapor phase prime step is performed at a pressure of about 400 mmHg to about atmospheric pressure. The method of claim 5, wherein the vapor phase prime step is performed for about 10 seconds to about 10 minutes. The method of claim 1, wherein a polymer layer is also removed during the photoresist development process. ※ Note: The disclosure is based on the initial application.