KR960013136B1 - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device Download PDF

Info

Publication number
KR960013136B1
KR960013136B1 KR92003522A KR920003522A KR960013136B1 KR 960013136 B1 KR960013136 B1 KR 960013136B1 KR 92003522 A KR92003522 A KR 92003522A KR 920003522 A KR920003522 A KR 920003522A KR 960013136 B1 KR960013136 B1 KR 960013136B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
fabricating method
fabricating
semiconductor
Prior art date
Application number
KR92003522A
Other languages
English (en)
Inventor
Yasusi Yamagata
Original Assignee
Nippon Electric Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Kk filed Critical Nippon Electric Kk
Application granted granted Critical
Publication of KR960013136B1 publication Critical patent/KR960013136B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR92003522A 1991-03-06 1992-03-04 Fabricating method of semiconductor device KR960013136B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03039654A JP3123092B2 (ja) 1991-03-06 1991-03-06 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR960013136B1 true KR960013136B1 (en) 1996-09-30

Family

ID=12559076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92003522A KR960013136B1 (en) 1991-03-06 1992-03-04 Fabricating method of semiconductor device

Country Status (3)

Country Link
US (1) US5210053A (ko)
JP (1) JP3123092B2 (ko)
KR (1) KR960013136B1 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460857B1 (en) * 1990-05-31 1997-03-19 Canon Kabushiki Kaisha Method for producing a semiconductor device with a high density wiring structure
GB9219268D0 (en) * 1992-09-11 1992-10-28 Inmos Ltd Semiconductor device incorporating a contact and manufacture thereof
KR940010197A (ko) * 1992-10-13 1994-05-24 김광호 반도체 장치의 제조방법
KR950010858B1 (ko) * 1992-10-20 1995-09-25 현대전자산업주식회사 반도체 소자의 금속콘택 형성방법
US5633201A (en) * 1992-11-30 1997-05-27 Hyundai Electronics Industries, Co., Ltd. Method for forming tungsten plugs in contact holes of a semiconductor device
US5595936A (en) * 1993-08-04 1997-01-21 Hyundai Electronics Industries Co., Ltd. Method for forming contacts in semiconductor device
JPH07297194A (ja) * 1994-04-25 1995-11-10 Sony Corp マルチチャンバー装置及び半導体装置の製造方法
US5571751A (en) * 1994-05-09 1996-11-05 National Semiconductor Corporation Interconnect structures for integrated circuits
KR0138307B1 (ko) * 1994-12-14 1998-06-01 김광호 반도체 장치의 측면콘택 형성방법
JPH08236622A (ja) * 1995-02-28 1996-09-13 Texas Instr Japan Ltd 半導体装置及びその製造方法
US5591673A (en) * 1995-07-05 1997-01-07 Taiwan Semiconductor Manufacturing Company Ltd. Tungsten stud process for stacked via applications
JP3344615B2 (ja) * 1995-12-12 2002-11-11 ソニー株式会社 半導体装置の製造方法
US6090700A (en) * 1996-03-15 2000-07-18 Vanguard International Semiconductor Corporation Metallization method for forming interconnects in an integrated circuit
US5950099A (en) * 1996-04-09 1999-09-07 Kabushiki Kaisha Toshiba Method of forming an interconnect
JP3068462B2 (ja) * 1996-05-29 2000-07-24 日本電気株式会社 半導体装置の製造方法
US6121129A (en) * 1997-01-15 2000-09-19 International Business Machines Corporation Method of contact structure formation
US6197639B1 (en) * 1998-07-13 2001-03-06 Samsung Electronics Co., Ltd. Method for manufacturing NOR-type flash memory device
US6223432B1 (en) * 1999-03-17 2001-05-01 Micron Technology, Inc. Method of forming dual conductive plugs
JP5560595B2 (ja) * 2009-06-18 2014-07-30 富士電機株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769108A (en) * 1971-12-03 1973-10-30 Bell Telephone Labor Inc Manufacture of beam-crossovers for integrated circuits
US4265935A (en) * 1977-04-28 1981-05-05 Micro Power Systems Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
US5063175A (en) * 1986-09-30 1991-11-05 North American Philips Corp., Signetics Division Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material

Also Published As

Publication number Publication date
JP3123092B2 (ja) 2001-01-09
JPH04277623A (ja) 1992-10-02
US5210053A (en) 1993-05-11

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