KR960010910A - 산화막의 성막방법 - Google Patents

산화막의 성막방법 Download PDF

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Publication number
KR960010910A
KR960010910A KR1019950028682A KR19950028682A KR960010910A KR 960010910 A KR960010910 A KR 960010910A KR 1019950028682 A KR1019950028682 A KR 1019950028682A KR 19950028682 A KR19950028682 A KR 19950028682A KR 960010910 A KR960010910 A KR 960010910A
Authority
KR
South Korea
Prior art keywords
oxide film
film formation
formation method
oxide
formation
Prior art date
Application number
KR1019950028682A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960010910A publication Critical patent/KR960010910A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019950028682A 1994-09-08 1995-09-02 산화막의 성막방법 KR960010910A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6240592A JPH0878406A (ja) 1994-09-08 1994-09-08 酸化膜の成膜方法

Publications (1)

Publication Number Publication Date
KR960010910A true KR960010910A (ko) 1996-04-20

Family

ID=17061802

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950028682A KR960010910A (ko) 1994-09-08 1995-09-02 산화막의 성막방법

Country Status (3)

Country Link
US (1) US5626924A (ko)
JP (1) JPH0878406A (ko)
KR (1) KR960010910A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416696B1 (ko) * 1996-10-01 2004-03-26 주식회사 하이닉스반도체 반도체소자의평탄화방법
KR100430799B1 (ko) * 1996-05-30 2005-10-21 삼성전자주식회사 컴퓨터가보유하는팩의착탈장치

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6009827A (en) * 1995-12-06 2000-01-04 Applied Materials, Inc. Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films
US6551665B1 (en) 1997-04-17 2003-04-22 Micron Technology, Inc. Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
US6149974A (en) * 1997-05-05 2000-11-21 Applied Materials, Inc. Method for elimination of TEOS/ozone silicon oxide surface sensitivity
JP2975919B2 (ja) * 1998-02-27 1999-11-10 株式会社半導体プロセス研究所 下地表面改質方法及び半導体装置の製造方法
US6294473B1 (en) * 1998-06-03 2001-09-25 Rodel Holdings Inc. Method of polishing substrates comprising silicon dioxide and composition relating thereto
US6156597A (en) * 1998-06-09 2000-12-05 Promos Technologies, Inc. Additional buffer layer for eliminating ozone/tetraethylorthosilicate sensitivity on an arbitrary trench structure
US6245690B1 (en) * 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US9725805B2 (en) * 2003-06-27 2017-08-08 Spts Technologies Limited Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US7638167B2 (en) * 2004-06-04 2009-12-29 Applied Microstructures, Inc. Controlled deposition of silicon-containing coatings adhered by an oxide layer
US20040261703A1 (en) * 2003-06-27 2004-12-30 Jeffrey D. Chinn Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US20050271893A1 (en) * 2004-06-04 2005-12-08 Applied Microstructures, Inc. Controlled vapor deposition of multilayered coatings adhered by an oxide layer
US7695775B2 (en) * 2004-06-04 2010-04-13 Applied Microstructures, Inc. Controlled vapor deposition of biocompatible coatings over surface-treated substrates
KR100762573B1 (ko) * 2004-06-04 2007-10-01 어플라이드 마이크로스트럭쳐스, 인코포레이티드 산화물층에 의해 부착된 다층 코팅의 제어되는 기상 증착
US7879396B2 (en) * 2004-06-04 2011-02-01 Applied Microstructures, Inc. High aspect ratio performance coatings for biological microfluidics
US9337054B2 (en) * 2007-06-28 2016-05-10 Entegris, Inc. Precursors for silicon dioxide gap fill
US7541297B2 (en) * 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872947A (en) * 1986-12-19 1989-10-10 Applied Materials, Inc. CVD of silicon oxide using TEOS decomposition and in-situ planarization process
JP2640174B2 (ja) * 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
US5426076A (en) * 1991-07-16 1995-06-20 Intel Corporation Dielectric deposition and cleaning process for improved gap filling and device planarization
US5376590A (en) * 1992-01-20 1994-12-27 Nippon Telegraph And Telephone Corporation Semiconductor device and method of fabricating the same
JPH05235184A (ja) * 1992-02-26 1993-09-10 Nec Corp 半導体装置の多層配線構造体の製造方法
US5271972A (en) * 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
JPH0795548B2 (ja) * 1992-09-10 1995-10-11 アプライド マテリアルズ インコーポレイテッド 二酸化珪素膜の気相成長法
US5459108A (en) * 1992-10-06 1995-10-17 Sharp Kabushiki Kaisha Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone
US5502006A (en) * 1993-11-02 1996-03-26 Nippon Steel Corporation Method for forming electrical contacts in a semiconductor device
US5503882A (en) * 1994-04-18 1996-04-02 Advanced Micro Devices, Inc. Method for planarizing an integrated circuit topography

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430799B1 (ko) * 1996-05-30 2005-10-21 삼성전자주식회사 컴퓨터가보유하는팩의착탈장치
KR100416696B1 (ko) * 1996-10-01 2004-03-26 주식회사 하이닉스반도체 반도체소자의평탄화방법

Also Published As

Publication number Publication date
JPH0878406A (ja) 1996-03-22
US5626924A (en) 1997-05-06

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