KR960010586A - High Frequency Dielectric Self Composition and Manufacturing Method Thereof - Google Patents
High Frequency Dielectric Self Composition and Manufacturing Method Thereof Download PDFInfo
- Publication number
- KR960010586A KR960010586A KR1019940024328A KR19940024328A KR960010586A KR 960010586 A KR960010586 A KR 960010586A KR 1019940024328 A KR1019940024328 A KR 1019940024328A KR 19940024328 A KR19940024328 A KR 19940024328A KR 960010586 A KR960010586 A KR 960010586A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- added
- tio
- manufacturing
- high frequency
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62675—Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
본 발명은 고주파 유전체 자기조성물 및 그 제조방법에 관한 것으로, 종래의 자기조성물은 유전율(k)이 40미만의 값을 가지며, 첨가물을 산화물 형태로 첨가하기 때문에, 미량 첨가시 정확한 공정제어에 어려움이 많은 문제점이 있었다.The present invention relates to a high frequency dielectric magnetic composition and a method for manufacturing the same. In the conventional magnetic composition, the dielectric constant (k) has a value of less than 40, and since the additive is added in the form of an oxide, it is difficult to precisely control the process when a small amount is added. There were many problems.
이에 본 발명에 의한 고주파 유전체 자기 조성물은 Zn1-XSnxTio4+YTiO2의 유전체 자기조성물을 주성분으로 하며, 이때 상기 X, Y는 몰(mol)비로서 0.1<X<0.4, 0<Y<0.1를 가지도록 하는 것이며, 첨가원소는 물에 녹는 염화니켈(NiCl2) 염화아연(ZnCl), 질산망간(Mn(NO3)2-4H2O)형태로 첨가하였다.The high frequency dielectric ceramic composition according to the present invention is composed of a dielectric magnetic composition of Zn 1-X Sn x Tio 4 + YTiO 2 , wherein X and Y are molar ratios of 0.1 <X <0.4, 0 <Y. <intended to to have 0.1, the additional element was added to the water soluble nickel chloride (NiCl 2) zinc chloride (ZnCl), manganese nitrate (Mn (NO 3) 2- 4H 2 O) type.
또한 이와같은 고주파 유전체 자기조성물을 산화지르코늄(ZrO2), 산화 주석(SnO2), 산화티탄(TiO2)으로 구성된 주조성물에 첨가원소로 수용성의 염화니켈(NiCl2), 염화아연(ZnCl), 질산망간(Mn(NO3)2-4H2O)을 첨가하여 혼합후, 1000℃ 내지 1200℃에서 하소 하고, 다시 분쇄하여 성형한 다음 1200℃ 내지 1400℃의 온도의 산소 분위기에서 소성하는 순서로 진행되는 제조방법에 의해 제조함을 특징으로 하고 있다.In addition, the high frequency dielectric magnetic composition is a water-soluble nickel chloride (NiCl 2 ) and zinc chloride (ZnCl) as an additive element in a casting formed of zirconium oxide (ZrO 2 ), tin oxide (SnO 2 ), and titanium oxide (TiO 2 ). , manganese nitrate (Mn (NO 3) 2- 4H 2 O) , and then added and mixed, to 1000 ℃ calcined at 1200 ℃, and pulverized and molded again, and then the order of firing, in an oxygen atmosphere at a temperature of 1200 to 1400 ℃ ℃ It characterized in that the manufacturing by the manufacturing method proceeded to.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940024328A KR970005884B1 (en) | 1994-09-27 | 1994-09-27 | Dielectric composition for high frequencies |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940024328A KR970005884B1 (en) | 1994-09-27 | 1994-09-27 | Dielectric composition for high frequencies |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960010586A true KR960010586A (en) | 1996-04-20 |
KR970005884B1 KR970005884B1 (en) | 1997-04-21 |
Family
ID=19393586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940024328A KR970005884B1 (en) | 1994-09-27 | 1994-09-27 | Dielectric composition for high frequencies |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970005884B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020042546A (en) * | 2002-03-25 | 2002-06-05 | 온재민 | A glass plate with a color pattern and the manufacturing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100854888B1 (en) * | 2007-08-20 | 2008-08-28 | 주식회사 하이닉스반도체 | Method of forming micro pattern for semiconductor device |
-
1994
- 1994-09-27 KR KR1019940024328A patent/KR970005884B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020042546A (en) * | 2002-03-25 | 2002-06-05 | 온재민 | A glass plate with a color pattern and the manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
KR970005884B1 (en) | 1997-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0131840B1 (en) | Magnetic oxidel of ni-cu-zn system | |
KR960010586A (en) | High Frequency Dielectric Self Composition and Manufacturing Method Thereof | |
JPH0521222A (en) | Manufacture of nickel-zinc ferrite | |
JPS582441B2 (en) | Teikoutai | |
US5296169A (en) | Method of producing varistor | |
JPS6143841B2 (en) | ||
KR970005883B1 (en) | Dielectric ceramic compositions | |
JPS6054723B2 (en) | High dielectric constant porcelain composition | |
JPH0283218A (en) | Oxide magnetic material | |
JPH03196602A (en) | Manufacture of ni-zn ferrite | |
JPS6236361B2 (en) | ||
US6028021A (en) | Microwave dielectric composition and method for preparing the same | |
JPH08104561A (en) | Oxide magnetic material | |
JP3559911B2 (en) | Thermistor | |
JPS63222065A (en) | Dielectric ceramic composition for high frequency | |
JP2007197255A (en) | METHOD OF MANUFACTURING Mn-Zn FERRITE | |
JP2939035B2 (en) | Soft magnetic oxide substance | |
JPH05299230A (en) | Manufacturing method for low loss oxide magnetic material | |
US6270693B1 (en) | Thermistor composition | |
JPH02196401A (en) | Voltage dependent nonlinear resistor | |
JPH0576761B2 (en) | ||
JPH08104562A (en) | Oxide magnetic material | |
JP3552794B2 (en) | Method for producing low-loss oxide magnetic material | |
JPH02248003A (en) | Manufacture of voltage dependent nonlinear resistor for low voltage | |
JP3590465B2 (en) | Method for producing low-loss oxide magnetic material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030627 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |