KR960010586A - High Frequency Dielectric Self Composition and Manufacturing Method Thereof - Google Patents

High Frequency Dielectric Self Composition and Manufacturing Method Thereof Download PDF

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KR960010586A
KR960010586A KR1019940024328A KR19940024328A KR960010586A KR 960010586 A KR960010586 A KR 960010586A KR 1019940024328 A KR1019940024328 A KR 1019940024328A KR 19940024328 A KR19940024328 A KR 19940024328A KR 960010586 A KR960010586 A KR 960010586A
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oxide
added
tio
manufacturing
high frequency
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KR970005884B1 (en
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박융
김윤호
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김은영
한국과학기술연구원
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Abstract

본 발명은 고주파 유전체 자기조성물 및 그 제조방법에 관한 것으로, 종래의 자기조성물은 유전율(k)이 40미만의 값을 가지며, 첨가물을 산화물 형태로 첨가하기 때문에, 미량 첨가시 정확한 공정제어에 어려움이 많은 문제점이 있었다.The present invention relates to a high frequency dielectric magnetic composition and a method for manufacturing the same. In the conventional magnetic composition, the dielectric constant (k) has a value of less than 40, and since the additive is added in the form of an oxide, it is difficult to precisely control the process when a small amount is added. There were many problems.

이에 본 발명에 의한 고주파 유전체 자기 조성물은 Zn1-XSnxTio4+YTiO2의 유전체 자기조성물을 주성분으로 하며, 이때 상기 X, Y는 몰(mol)비로서 0.1<X<0.4, 0<Y<0.1를 가지도록 하는 것이며, 첨가원소는 물에 녹는 염화니켈(NiCl2) 염화아연(ZnCl), 질산망간(Mn(NO3)2-4H2O)형태로 첨가하였다.The high frequency dielectric ceramic composition according to the present invention is composed of a dielectric magnetic composition of Zn 1-X Sn x Tio 4 + YTiO 2 , wherein X and Y are molar ratios of 0.1 <X <0.4, 0 <Y. <intended to to have 0.1, the additional element was added to the water soluble nickel chloride (NiCl 2) zinc chloride (ZnCl), manganese nitrate (Mn (NO 3) 2- 4H 2 O) type.

또한 이와같은 고주파 유전체 자기조성물을 산화지르코늄(ZrO2), 산화 주석(SnO2), 산화티탄(TiO2)으로 구성된 주조성물에 첨가원소로 수용성의 염화니켈(NiCl2), 염화아연(ZnCl), 질산망간(Mn(NO3)2-4H2O)을 첨가하여 혼합후, 1000℃ 내지 1200℃에서 하소 하고, 다시 분쇄하여 성형한 다음 1200℃ 내지 1400℃의 온도의 산소 분위기에서 소성하는 순서로 진행되는 제조방법에 의해 제조함을 특징으로 하고 있다.In addition, the high frequency dielectric magnetic composition is a water-soluble nickel chloride (NiCl 2 ) and zinc chloride (ZnCl) as an additive element in a casting formed of zirconium oxide (ZrO 2 ), tin oxide (SnO 2 ), and titanium oxide (TiO 2 ). , manganese nitrate (Mn (NO 3) 2- 4H 2 O) , and then added and mixed, to 1000 ℃ calcined at 1200 ℃, and pulverized and molded again, and then the order of firing, in an oxygen atmosphere at a temperature of 1200 to 1400 ℃ ℃ It characterized in that the manufacturing by the manufacturing method proceeded to.

Description

고주파 유전체 자기조성물 및 그 제조방법High Frequency Dielectric Self Composition and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

다음의 조성The next composition Zn1-xSnxTiO4+ Y TiO2 Zn 1-x Sn x TiO 4 + Y TiO 2 여기서, 0.1 〈 X 〈 0.4 ㏖ %Where 0.1 <X <0.4 mol% 0 〈 Y 〈 0.1 ㏖ %0 〈Y 〈0.1 mol% 으로 이루어지고, 첨가원소를 물에 녹는 염화니켈(Nicl2), 염화아연(ZnCl), 질산망간(Mn(NO3)2·4H2O)형태로 첨가하는데, 이 때 상기 산화지르코늄(ZrO|2), 산화주석(SnO2), 산화티탄(TiO2)으로 구성된 주조성물의 무게를 100으로 하여 염화물(ZnCl2, Nicl2) 및 수화물(Mn(NO3)2,4H2O)을 산화물의 무게비로 환산해서 산화니켈(NiO)이 1wt%미만, 산화아연(ZnO)이 1wt%미만, 산화탄탈륨(Ta2O5)가 5wt%미만, 산화망간(MnO)을 1wt%미만 첨가하여 구성한 것을 특징으로 하는 고주파 유전체 자기조성물.The addition element is added in the form of nickel chloride (Nicl 2 ), zinc chloride (ZnCl), and manganese nitrate (Mn (NO 3 ) 2 .4H 2 O), which dissolve in water, wherein the zirconium oxide (ZrO | 2 ), the weight of the cast product consisting of tin oxide (SnO 2 ), titanium oxide (TiO 2 ) to 100 weight of chloride (ZnCl 2 , Nicl 2 ) and hydrate (Mn (NO 3 ) 2 , 4 H 2 O) Nickel oxide (NiO) is less than 1wt%, zinc oxide (ZnO) is less than 1wt%, tantalum oxide (Ta 2 O 5 ) is less than 5wt%, and manganese oxide (MnO) is less than 1wt%. A high frequency dielectric magnetic composition comprising the same. 산화지르코늄(ZrO2), 산화주석(SnO2), 산화티탄(TiO2)으로 구성된 주조성물에 첨가원소를 수용성의 염화니켈(NiCl2), 염화아연(ZnCl), 질산망간(Mn(NO3)2·4H2O)을 첨가하여 혼합 후, 1000℃ 내지 1200℃에서 하소하고, 다시 분쇄하여 성형한 다음 1200℃ 내지 1400℃의 온도의 산소분위기에서 소성함을 특징으로 하는 고주파 유전체 자기조성물의 제조방법.Water-soluble nickel chloride (NiCl 2 ), zinc chloride (ZnCl), and manganese nitrate (Mn (NO 3 ) are added to the casting product composed of zirconium oxide (ZrO 2 ), tin oxide (SnO 2 ) and titanium oxide (TiO 2 ). ) high-frequency dielectric material of a ceramic composition characterized by a predetermined name in the 2 · 4H 2 O), and then added and mixed, the oxygen atmosphere in the calcination, and grinding the temperature of the next 1200 ℃ to 1400 ℃ molded again at 1000 ℃ to 1200 ℃ Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940024328A 1994-09-27 1994-09-27 Dielectric composition for high frequencies KR970005884B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020042546A (en) * 2002-03-25 2002-06-05 온재민 A glass plate with a color pattern and the manufacturing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854888B1 (en) * 2007-08-20 2008-08-28 주식회사 하이닉스반도체 Method of forming micro pattern for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020042546A (en) * 2002-03-25 2002-06-05 온재민 A glass plate with a color pattern and the manufacturing method

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