JPH0576761B2 - - Google Patents

Info

Publication number
JPH0576761B2
JPH0576761B2 JP59133331A JP13333184A JPH0576761B2 JP H0576761 B2 JPH0576761 B2 JP H0576761B2 JP 59133331 A JP59133331 A JP 59133331A JP 13333184 A JP13333184 A JP 13333184A JP H0576761 B2 JPH0576761 B2 JP H0576761B2
Authority
JP
Japan
Prior art keywords
voltage
current
bismuth oxide
stoichiometric
sintered body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59133331A
Other languages
Japanese (ja)
Other versions
JPS6114702A (en
Inventor
Hideyuki Kanai
Motomasa Imai
Osamu Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59133331A priority Critical patent/JPS6114702A/en
Publication of JPS6114702A publication Critical patent/JPS6114702A/en
Publication of JPH0576761B2 publication Critical patent/JPH0576761B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】[Detailed description of the invention]

[発明の技術分野] 本発明は酸化亜鉛(ZnO)を主成分とする焼結
体からなる電圧電流非直線抵抗体に関し、特に直
流課電時の寿命特性に優れた電圧電流非直線抵抗
体に関する。 [発明の技術的背景とその問題点] 従来から各種の電圧電流非直線抵抗体(酸化物
バリスタ)が研究されているが、その中の一つに
ZnOを主成分とした焼結体を用いたものがある。
このZnOを主成分とした焼結体を用いたものにお
いては、各種副成分を添加して所望の特性を得る
ことが試みられている。 最近、直流送電の研究開発が行われているが、
交流送電の場合と異なり、非直線抵抗体には常に
一方向の電界が加わるため、非常に過酷な条件と
なる。このような過酷な条件に耐え得る直流寿命
特性に優れた電圧電流非直線抵抗体は得られてい
ないのが現状である。例えば特開昭49−119188号
に示されているZnOにBi2O3、CoO、Sb2O3
NiO、MnOを添加したもの、特公昭46−19472号
に示されているZnOにB、Biを添加したもの、
特公昭56−33842号に示されているZnOに酸化硼
素を含むガラスを添加したもの等が知られている
が、いずれも十分な特性は得られていない。例え
ば直流課電時の漏れ電流が時間とともに増加し、
熱暴走を生じてしまい、直流寿命特性に劣るもの
であつた。 また近年送電の高圧化(UHV)が進むにつ
れ、要求される特性、例えば電圧電流非直線特
性、寿命特性等は過酷なものとなつてきている。 このように寿命特性、非直線性等の諸特性向上
の要求は年々大きくなつてきており、このような
要求を満足するため各所で研究が行なわれてい
る。 [発明の目的] 本発明は以上の点を考慮してなされたもので、
直流寿命特性に優れた電圧電流非直線抵抗体を提
供することを目的とする。さらに、電圧電流非直
線特性に優れた電圧電流非直線抵抗体を提供する
ことを目的とする。 [発明の概要] 本発明は、酸化亜鉛を主成分とし、副成分とし
て少なくとも酸化ビスマスを含有した焼結体中に
不定比酸化ビスマスが含有されていることを特徴
とする電圧電流非直線抵抗体である。 不定比酸化ビスマスは、Bi2O3から化学量論比
的にはずれた組成を有し、Bi2O2.33とBi2O2.75
知られている。この不定比酸化ビスマスを含む酸
化亜鉛主体の焼結体は、非直線性、寿命特性等の
バリスタ特性に優れたものとなる。 本発明による電圧電流非直線抵抗体中の不定比
酸化ビスマスは焼成プロセス、熱処理プロセス、
焼成雰囲気、熱処理雰囲気、組成等の製造条件で
全酸化ビスマス中の比率が変化する。しかしその
不定比化合物の量が微量なこと、および酸化ビス
マスの他の相と面間距離が近いこともあつて、X
線回折では不定比相を区別することは難しく同定
は電子線回折によつた。そのため不定比酸化ビス
マスの全Bi2O3量に対する割合を定量的に求める
ことはできないが、各種組成において不定比酸化
ビスマスを有無と非直線特性、交流および直流寿
命特性の関係を調べたところ不定比酸化ビスマス
を含むものは、これを含まないものに対して優れ
た特性を示した。 焼結体の副成分としては、MnO、NiO、
Co2O3、Sb2O3、MgO、BaO、Fe3O4、B2O3
Al2O3、SnO2、SiO2、Ag2O等の各種のものがあ
るが、特に下記の組成物が、バリスタ特性に優れ
ているため好ましい。 すなわち、副成分として、ビスマス、コバル
ト、マンガン、アンチモン及びニツケルが
Bi2O3、Co2O3、MnO、Sb2O3及びNiOに換算し
て、夫々0.1〜5mol%及び、アルミニウム、イン
ジウム及びガリウムから選ばれた少なくとも一種
がAl3+、In3+、Ga3+に換算して0.0001〜0.05mol
%含有され、酸化亜鉛と前記副成分を加えた基本
成分に対し、さらに副成分として硼素がB2O3
換算して0.001〜1wt%含有されたことを特徴とす
るの電圧電流非直線抵抗体である。このような組
成を有する電圧電流非直線抵抗体は、そのものが
各種バリスタ特性に優れているため、本発明によ
る不定比酸化ビスマスを含むことにより、さらに
優れたものとなる。 Bi2O3、Co2O3、MnO、Sb2O3、NiOをそれぞ
れ0.1〜5mol%、Al3+、Ga3+、In3+を0.0001〜
0.05mol%、B2O3を0.001〜1.0wt%としたのはこ
の範囲をはずれると各特性の劣化が大きくなり不
定比酸化ビスマス含有の効果があらわれないため
である。 上記各成分は換算値であり、炭酸塩等の各種の
形態で添加することができる。例えば硼素の添加
形態としては各種のものが考えられ、B2O3
H3BO3、HBO2、B2(OH)4、ZnB4O7、AgBO2
Ag2、B4O7、BaB4O7、Mg(BO22・8H2O、
MnB4O7・8H2O、BiBO3、Ni3(BO32
Ni2B2O5等が挙げられる。 原材料の均一な混合を考えると硼素成分は水に
易溶な形態のものを用い、水溶液として混合する
ことが好ましい。例えばH3BO3、HBO2、B2
(OH)4、ZnB4O7、硼素アンモニウム、AgBO2
Ag2B4O7等が水に易溶なものとして挙げられる。 Al3+、In3+、Ga3+は、0.05mol%以下の範囲で
効果を発揮する。Al3+等は微量の添加で効果が
あらわれるが、特に0.0001mol%以上の添加含有
ですぐれた効果を奏する。また、あまり多いとか
えつて特性を劣化させてしまう。特に非直線特性
におけるAl3+等の含有の効果は大である。この
場合も前述のごとく、ごく微量で特性向上の効果
を得ることがきるため、硝酸塩等の水に易溶な化
合物の水溶液として混合添化することが好まし
い。 [発明の効果] 以上説明したように本発明によれば、直流寿命
特性に優れた電圧電流非直線抵抗体を得ることが
できる。また本発明抵抗体は、非直線特性及び交
流寿命特性にも優れている。 従つて直流高圧送電用のサージ吸収体としての
避雷器に有効である。また交流送電用としても有
効である。特にUHV用として好適である。又、
直流用、交流用として両者を同一ラインで製造で
きるため、コスト低下等の製造上のメリツトも大
なるものである。また各特性に優れているため、
民生用の素子としても有効である。 [発明の実施例] 以上本発明の実施例を説明する。 ZnOに副成分としてBi2O3、Co2O3、MnO、
Sb2O3、NiO、Al(NO33・9H2Oを所望の組成比
で調合し、Bを含む化合物としてH3BO3を所望
の割合で溶解した水溶液を加え、混合の後、バイ
ンダーとしてPVAを加え造粒し、円板状の板材
に成形した。 この板材を乾燥の後、焼成条件、熱処理条件を
変化させて、各種組成に対し、不定比酸化ビスマ
スを含むものと含まないものを作成した。得られ
た焼結体の両面を研磨し、直径25mm、厚さ2.5mm
とした。 この試料の両面にAl溶射により電極を設け電
圧電流非直線抵抗体を形成し各種特性を測定し
た。この結果を第1表に示す。第1表において、
電圧電流非直線特性はV2KA/V1nA、寿命特性は
L400で示す。またB量はB2O3に換算して基本成
分に対する重量比で示した。 V2KA/V1nA =V(2KA電流通電時の電圧)/V(1mA電流通電時の
電圧) L400=I(400)/I(0) I(400)は周囲温度95℃とし、D.C.の場合は
0.75×V1nAの電圧を400時間印加し続けた後室温
で測定した漏れ電流であり、A.C.の場合は0.85×
V1nAの電圧を400時間印加し続けた後、室温で測
定した漏れ電流である。I(0)は初期値であり、
L400はI(400)とI(0)の比で表わした。 不定比酸化ビスマスの同定は電子線回折により
行ない、ASTMカード27−49(Bi2O2.75)、27−51
(Bi2O2.33)を用いた。しかし酸化ビスマスは他
の副成分を固溶するため、両間距離の値は
ASTMカードの値とは必ずしも一致せず、±3%
程度の幅がある。 なお、第2表に各試料の製造条件を示す。第3
表は第2表中の記号を証明する表である。傾向と
して昇降温速度を一般の速度より速くした場合、
不定比化合物が存在する。又、酸素分圧が低いと
きも不定比化合物がでやすいが、低いと特性その
ものが劣化してしまう。
[Technical Field of the Invention] The present invention relates to a voltage-current non-linear resistor made of a sintered body containing zinc oxide (ZnO) as a main component, and particularly to a voltage-current non-linear resistor that has excellent life characteristics when DC current is applied. . [Technical background of the invention and its problems] Various voltage-current non-linear resistors (oxide varistors) have been studied, but one of them is
Some use a sintered body containing ZnO as the main component.
In products using this sintered body mainly composed of ZnO, attempts have been made to add various subcomponents to obtain desired characteristics. Recently, research and development on DC power transmission has been carried out.
Unlike in the case of AC power transmission, a unidirectional electric field is always applied to a nonlinear resistor, resulting in extremely harsh conditions. At present, a voltage-current nonlinear resistor with excellent DC life characteristics that can withstand such harsh conditions has not been obtained. For example, Bi 2 O 3 , CoO, Sb 2 O 3 ,
Those with NiO and MnO added, those with B and Bi added to ZnO shown in Japanese Patent Publication No. 46-19472,
A method in which glass containing boron oxide is added to ZnO is known, as shown in Japanese Patent Publication No. 56-33842, but none of them have sufficient properties. For example, leakage current when applying DC voltage increases with time,
Thermal runaway occurred and the DC life characteristics were poor. Furthermore, as power transmission has become increasingly high voltage (UHV) in recent years, the required characteristics, such as voltage-current nonlinear characteristics and life characteristics, have become more severe. As described above, the demand for improvements in various properties such as life characteristics and nonlinearity is increasing year by year, and research is being conducted in various places to satisfy these demands. [Object of the invention] The present invention has been made in consideration of the above points, and
The purpose of the present invention is to provide a voltage-current nonlinear resistor with excellent DC life characteristics. A further object of the present invention is to provide a voltage-current nonlinear resistor with excellent voltage-current nonlinear characteristics. [Summary of the Invention] The present invention provides a voltage-current nonlinear resistor characterized in that non-stoichiometric bismuth oxide is contained in a sintered body containing zinc oxide as a main component and at least bismuth oxide as a subcomponent. It is. Nonstoichiometric bismuth oxide has a composition deviating from Bi 2 O 3 in stoichiometric ratio, and Bi 2 O 2.33 and Bi 2 O 2.75 are known. This sintered body mainly composed of zinc oxide and containing non-stoichiometric bismuth oxide has excellent varistor properties such as nonlinearity and life characteristics. The non-stoichiometric bismuth oxide in the voltage-current non-linear resistor according to the present invention is produced by a firing process, a heat treatment process,
The proportion of bismuth in total bismuth oxide changes depending on manufacturing conditions such as firing atmosphere, heat treatment atmosphere, and composition. However, due to the small amount of the non-stoichiometric compound and the close interplanar distance to other phases of bismuth oxide,
It is difficult to distinguish the non-stoichiometric phase by line diffraction, so identification was done by electron beam diffraction. Therefore, it is not possible to quantitatively determine the ratio of non-stoichiometric bismuth oxide to the total amount of Bi 2 O 3 , but when we investigated the relationship between the presence or absence of non-stoichiometric bismuth oxide and non-linear characteristics, AC and DC life characteristics in various compositions, we found that it is variable. Those containing specific bismuth oxide showed superior properties compared to those containing no specific bismuth oxide. Sub-components of the sintered body include MnO, NiO,
Co2O3 , Sb2O3 , MgO , BaO, Fe3O4 , B2O3 ,
There are various materials such as Al 2 O 3 , SnO 2 , SiO 2 , Ag 2 O, etc., but the following compositions are particularly preferred because they have excellent varistor properties. That is, bismuth, cobalt, manganese, antimony, and nickel are added as subcomponents.
Bi 2 O 3 , Co 2 O 3 , MnO, Sb 2 O 3 and 0.1 to 5 mol% in terms of NiO, respectively, and at least one selected from aluminum, indium and gallium is Al 3+ , In 3+ , 0.0001 to 0.05mol converted to Ga 3+
% and further contains boron as an accessory component of 0.001 to 1wt% in terms of B 2 O 3 with respect to the basic component including zinc oxide and the above-mentioned accessory components. It is the body. Since the voltage-current nonlinear resistor having such a composition is excellent in various varistor characteristics, it becomes even more excellent by including the non-stoichiometric bismuth oxide according to the present invention. Bi 2 O 3 , Co 2 O 3 , MnO, Sb 2 O 3 , NiO 0.1 to 5 mol% each, Al 3+ , Ga 3+ , In 3+ 0.0001 to 5 mol%
The reason why B 2 O 3 was set at 0.05 mol % and 0.001 to 1.0 wt % is because, outside this range, the deterioration of each property becomes large and the effect of containing non-stoichiometric bismuth oxide is not manifested. Each of the above components is a converted value, and can be added in various forms such as carbonate. For example, various types of boron can be added, such as B 2 O 3 ,
H 3 BO 3 , HBO 2 , B 2 (OH) 4 , ZnB 4 O 7 , AgBO 2 ,
Ag 2 , B 4 O 7 , BaB 4 O 7 , Mg(BO 2 ) 2・8H 2 O,
MnB4O78H2O , BiBO3 , Ni3 ( BO3 ) 2 ,
Examples include Ni 2 B 2 O 5 and the like. Considering uniform mixing of raw materials, it is preferable to use a boron component that is easily soluble in water and to mix it as an aqueous solution. For example H 3 BO 3 , HBO 2 , B 2
(OH) 4 , ZnB 4 O 7 , ammonium boron, AgBO 2 ,
Ag 2 B 4 O 7 etc. are listed as easily soluble in water. Al 3+ , In 3+ , and Ga 3+ exhibit their effects in a range of 0.05 mol% or less. Al 3+ etc. can be effective when added in a trace amount, but especially when added in an amount of 0.0001 mol % or more, excellent effects are achieved. Moreover, if there is too much of it, the characteristics will deteriorate on the contrary. In particular, the effect of containing Al 3+ etc. on nonlinear characteristics is significant. In this case as well, as described above, since the effect of improving properties can be obtained with a very small amount, it is preferable to mix and add a compound easily soluble in water, such as a nitrate, as an aqueous solution. [Effects of the Invention] As explained above, according to the present invention, a voltage-current nonlinear resistor with excellent DC life characteristics can be obtained. The resistor of the present invention also has excellent nonlinear characteristics and AC life characteristics. Therefore, it is effective as a lightning arrester as a surge absorber for DC high voltage power transmission. It is also effective for AC power transmission. It is particularly suitable for UHV applications. or,
Since both direct current and alternating current applications can be manufactured on the same line, there are great manufacturing advantages such as cost reduction. In addition, because it has excellent characteristics,
It is also effective as a consumer device. [Embodiments of the Invention] Examples of the present invention will be described above. Bi 2 O 3 , Co 2 O 3 , MnO,
Sb 2 O 3 , NiO, Al(NO 3 ) 3.9H 2 O are prepared in a desired composition ratio, an aqueous solution in which H 3 BO 3 is dissolved in a desired ratio as a B-containing compound is added, and after mixing, PVA was added as a binder, granulated, and formed into a disc-shaped plate. After drying this plate material, the firing conditions and heat treatment conditions were varied to create plates of various compositions, with and without non-stoichiometric bismuth oxide. Both sides of the obtained sintered body were polished to a diameter of 25 mm and a thickness of 2.5 mm.
And so. Electrodes were provided on both sides of this sample by Al spraying to form a voltage-current nonlinear resistor, and various characteristics were measured. The results are shown in Table 1. In Table 1,
The voltage-current nonlinear characteristics are V 2KA /V 1nA , and the life characteristics are
Shown as L 400 . Moreover, the amount of B was converted into B 2 O 3 and expressed as a weight ratio to the basic components. V 2KA /V 1nA = V (voltage when 2KA current is applied) / V (voltage when 1mA current is applied) L 400 = I (400) / I (0) I (400) is the ambient temperature of 95°C, and the DC If
This is the leakage current measured at room temperature after applying a voltage of 0.75×V 1nA for 400 hours, and in the case of AC, it is 0.85×
This is the leakage current measured at room temperature after applying a voltage of V 1nA for 400 hours. I(0) is the initial value,
L 400 was expressed as the ratio of I(400) and I(0). Identification of non-stoichiometric bismuth oxide was performed by electron diffraction, using ASTM cards 27-49 (Bi 2 O 2.75 ), 27-51.
(Bi 2 O 2.33 ) was used. However, since bismuth oxide dissolves other subcomponents in solid solution, the value of the distance between the two is
Does not necessarily match the ASTM card value, ±3%
There is a range of degrees. Note that Table 2 shows the manufacturing conditions for each sample. Third
The table is a table that proves the symbols in Table 2. If the temperature increase/decrease rate is made faster than the normal rate,
Non-stoichiometric compounds exist. Also, non-stoichiometric compounds are likely to be produced when the oxygen partial pressure is low, but when the oxygen partial pressure is low, the characteristics themselves deteriorate.

【表】【table】

【表】【table】

【表】【table】

【表】【table】

【表】 第1表から明らかなように、焼結体中に不定比
酸化ビスマスを含むものは含まない場合に比べ、
非直線特性、交流および直流の寿命特性が優れて
いることがわかる。数値的にはわずかではあるが
その効果は絶大である。 以上副成分としてビスマスの他に、コバルト、
マンガン、アンチモン、ニツケル、アルミニウ
ム、ボロンを選んだが、不定比酸化ビスマスによ
る特性改善の効果は他の副成分の組み合わせの場
合でも同様である。
[Table] As is clear from Table 1, the sintered body containing non-stoichiometric bismuth oxide has a higher
It can be seen that the nonlinear characteristics and AC and DC life characteristics are excellent. Although numerically small, the effect is enormous. In addition to bismuth as the above-mentioned subcomponents, cobalt,
Although manganese, antimony, nickel, aluminum, and boron were selected, the effect of improving properties by non-stoichiometric bismuth oxide is the same in the case of combinations of other subcomponents.

Claims (1)

【特許請求の範囲】 1 酸化亜鉛を主成分とし、副成分として少なく
とも酸化ビスマスを含有した焼結体中にBi2O2.33
及びBi2O2.75の少なくとも一種からなる不定比酸
化ビスマスが含有されていることを特徴とする電
圧電流非直線抵抗体。 2 前記焼結体は、副成分としてビスマス、コバ
ルト、マンガン、アンチモン及びニツケルが
Bi2O3、Co2O3、MnO、Sb2O3及びNiOに換算し
て、それぞれ0.1〜5mol%並びに、アルミニウ
ム、インジウム及びガリウムから選ばれた少なく
とも一種がAl3+、In3+、Ga3+に換算して0.0001〜
0.05mol%含有され、酸化亜鉛と前記副成分を加
えた基本成分に対し、さらに副成分として硼素が
B2O3に換算して0.001〜1wt%含有されたことを
特徴とする特許請求の範囲第1項記載の電圧電流
非直線抵抗体。
[Claims] 1 Bi 2 O 2.33 in a sintered body containing zinc oxide as a main component and at least bismuth oxide as a subcomponent.
and Bi 2 O 2.75 . 2 The sintered body contains bismuth, cobalt, manganese, antimony, and nickel as subcomponents.
0.1 to 5 mol% in terms of Bi 2 O 3 , Co 2 O 3 , MnO, Sb 2 O 3 and NiO, respectively, and at least one selected from aluminum, indium and gallium is Al 3+ , In 3+ , 0.0001~ converted to Ga 3+
It contains 0.05mol%, and in addition to the basic component including zinc oxide and the above-mentioned subcomponents, boron is added as a subcomponent.
The voltage-current nonlinear resistor according to claim 1, characterized in that the content is 0.001 to 1 wt% in terms of B 2 O 3 .
JP59133331A 1984-06-29 1984-06-29 Voltage current nonlinear resistor Granted JPS6114702A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59133331A JPS6114702A (en) 1984-06-29 1984-06-29 Voltage current nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59133331A JPS6114702A (en) 1984-06-29 1984-06-29 Voltage current nonlinear resistor

Publications (2)

Publication Number Publication Date
JPS6114702A JPS6114702A (en) 1986-01-22
JPH0576761B2 true JPH0576761B2 (en) 1993-10-25

Family

ID=15102216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59133331A Granted JPS6114702A (en) 1984-06-29 1984-06-29 Voltage current nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS6114702A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671309B2 (en) * 1988-04-21 1994-09-07 沖電気工業株式会社 Image sensor output correction method
JP2011123876A (en) * 2009-11-12 2011-06-23 Semiconductor Energy Lab Co Ltd Semiconductor device
CN108993474B (en) * 2018-06-26 2020-12-15 陕西科技大学 BiO (bismuth oxide)2-x/Bi2O2.75/Zn2SnO4Composite photocatalyst and preparation method and application thereof

Also Published As

Publication number Publication date
JPS6114702A (en) 1986-01-22

Similar Documents

Publication Publication Date Title
JPS63136603A (en) Manufacture of voltage nonlinear resistor
US4527146A (en) Varistor
JPS62237703A (en) Manufacture of voltage nonlinear resistance element
US5277843A (en) Voltage non-linear resistor
JPS5918602A (en) Low voltage ceramic varistor
JPH0576761B2 (en)
JPH0425681B2 (en)
JPH0136684B2 (en)
JPH0223008B2 (en)
JP2656233B2 (en) Voltage non-linear resistor
JPH0734401B2 (en) Voltage nonlinear resistor
JPH04245602A (en) Nonlinearly voltage-dependent resistor
JPH0216003B2 (en)
JPS60107802A (en) Voltage nonlinear resistance element
JPH0354441B2 (en)
JPH0580802B2 (en)
JPS583364B2 (en) Voltage nonlinear resistor
JP2012060003A (en) Voltage nonlinear resistor element, manufacturing method for the same, and over-voltage protector
JPS61259502A (en) Manufacture of voltage non-linear resistor
JPS583363B2 (en) Voltage nonlinear resistor
JPS6236615B2 (en)
JPS6330765B2 (en)
JPS634681B2 (en)
JPS59117201A (en) Voltage and current nonlinear resistor
JPH04245601A (en) Nonlinearly voltage-dependent resistor