JPS60107802A - Voltage nonlinear resistance element - Google Patents

Voltage nonlinear resistance element

Info

Publication number
JPS60107802A
JPS60107802A JP58215366A JP21536683A JPS60107802A JP S60107802 A JPS60107802 A JP S60107802A JP 58215366 A JP58215366 A JP 58215366A JP 21536683 A JP21536683 A JP 21536683A JP S60107802 A JPS60107802 A JP S60107802A
Authority
JP
Japan
Prior art keywords
atomic
voltage
voltage nonlinear
resistance element
total amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58215366A
Other languages
Japanese (ja)
Other versions
JPH0142613B2 (en
Inventor
哲 丸山
孝一 津田
向江 和郎
永沢 郁雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP58215366A priority Critical patent/JPS60107802A/en
Publication of JPS60107802A publication Critical patent/JPS60107802A/en
Publication of JPH0142613B2 publication Critical patent/JPH0142613B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は電圧非直線抵抗体、さらに詳しくは過電圧保護
用素子として用いられる酸化亜鉛(ZnO)を主成分と
した電圧非直線抵抗体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a voltage non-linear resistor, and more particularly to a voltage non-linear resistor containing zinc oxide (ZnO) as a main component and used as an overvoltage protection element.

〔従来技術とその問題点〕[Prior art and its problems]

従来、電子機器、電値機器の過電圧保護を目的としてシ
リコンカーバイド(SiC)、セレン(be)tシリコ
ン(Si)又はZnOを主成分としたバリスタが利用さ
れている。中でもZnOを主成分としたバリスタは・一
般に制限電圧が低く、電圧非直線指数が大きいなどの特
徴を有している。そのため半導体素子のような過電流耐
量の小さいもので構成される機器の過電圧に対する保愚
に適しているので、SjCよりなるバリスタなど九代っ
て広く利用されるようになった。
Conventionally, varistors containing silicon carbide (SiC), selenium (be)t silicon (Si), or ZnO as a main component have been used for the purpose of overvoltage protection of electronic devices and electric value devices. Among them, varistors whose main component is ZnO generally have a low limiting voltage and a large voltage nonlinearity index. For this reason, it is suitable for protecting against overvoltage in equipment made of devices with low overcurrent resistance such as semiconductor elements, so varistors made of SJC have been widely used for nine generations.

またZnOを主成分とし、副成分として希土類元素、コ
バルト(Co)、マグネシウム(Mg)、カルシウム(
Ca)の中から少なくとも一ト1【、カリウム(K)、
ルビジウム(Rb ) 、セシウム(Cs) のうち少
なくとも1 ′4giならびにクロムCCr)’+元素
又は化合物の形で添加して焼成することにより製造され
る電圧非直線抵抗体が電圧非直線性に優れていることが
知られている。しかしこの電圧非直線抵抗体は、長波尾
サージ耐量がやや低いという欠点や、課電寿命性能が低
りなどという欠点があり素子の小型化を行う上で問題が
あった。
In addition, ZnO is the main component, and rare earth elements, cobalt (Co), magnesium (Mg), calcium (
at least one of potassium (K), potassium (K),
A voltage nonlinear resistor manufactured by adding at least 1'4gi of rubidium (Rb) and cesium (Cs) and chromium (CCr)' in the form of an element or compound and firing it has excellent voltage nonlinearity. It is known that there are However, this voltage nonlinear resistor has drawbacks such as a somewhat low long-wave tail surge resistance and a low energized life performance, which poses problems in miniaturizing the device.

〔発明の目的〕[Purpose of the invention]

本発明は、長波尾サージによる素子の破壊機構を究明し
、さらに破壊防止を行うことを実現し、同時に課電寿命
特性をも向上させた、小形で高長波尾サージ耐量および
課電寿命特性の優れた電圧非直線抵抗体を提供すること
を目的としている。
The present invention has investigated the destruction mechanism of elements due to long wave tail surges, and has achieved further prevention of destruction, and at the same time has improved the energized life characteristics. The purpose is to provide an excellent voltage nonlinear resistor.

〔発明の要点〕[Key points of the invention]

ここに本発明者は、ZnOを主成分とし、副成分どして
希土a7c=、C01Mg、 Caのうち少なくとも一
種、K、 Cs、 Rbのうち少なくとも一種ならC2
にCrを添加してなる(IE釆技術の電圧非直線抵抗体
においては、長波尾の大型υ1tのサージが印加される
と、素子表面に備えられた電極の外周部において電界集
中による電流集中が発生し、力)力する電流集中が素子
の破壊をもたらす事実を見出した。
Here, the present inventor has proposed that the main component is ZnO, and the subcomponents are at least one of rare earth a7c=, C01Mg, Ca, and at least one of K, Cs, and Rb.
(In the voltage nonlinear resistor of IE button technology, when a large surge of υ1t with a long wave tail is applied, current concentration due to electric field concentration occurs at the outer periphery of the electrode provided on the element surface. We have discovered that the concentration of current that is generated and exerts force causes the destruction of the element.

また抵抗体内部においては、局部的な不均質部が存在し
ている事実を確認し、直流電流逆電時にこの不均質部へ
の電流集中が発生し、71d2性劣化をもたらすことを
見出した。
It was also confirmed that there were local inhomogeneities inside the resistor, and it was found that current concentration in these inhomogeneities occurred during reverse DC current, resulting in 71d2 deterioration.

このような問題を解決すべく研究を進めたところ、副成
分として更にホウケイ酸ガラスおよびアルミニウム(A
I)、ガリウム(Ga)、インジウム(In )の中か
ら少な(とも一種を添加することにより、素子外周部が
内部よりやや高抵抗化する事実、そしてこれが電極外周
部での電流集中を防止し、長波尾サージ耐量の向上を可
能にする事実を見出した。一方抵抗体内部における不均
質部も同時に消滅し、課電寿命の大幅な向上がなされた
電圧非直線抵抗体が得られることを見出し、本発明を完
成した。
As we proceeded with our research to solve these problems, we found that borosilicate glass and aluminum (A
By adding a small amount (or one kind) of I), gallium (Ga), and indium (In), the outer periphery of the element has a slightly higher resistance than the inside, and this prevents current concentration at the outer periphery of the electrode. discovered that it is possible to improve the long-wave tail surge withstand capability.On the other hand, the inhomogeneity inside the resistor also disappears, resulting in a voltage nonlinear resistor with a significantly improved energized life. , completed the invention.

しかして本発明によれば、ZnOを主成分とし、副成分
として希土類元素、CO・Mg、 Caの少なくとも一
種、K、 Ilb、 Csのうち少なくとも一種ならび
にCrを含む従来の・電圧非直線抵抗体に、更に副成分
としてホウケイ酸ガラスオ6よびAl、Ga。
Therefore, according to the present invention, a conventional voltage nonlinear resistor containing ZnO as a main component and containing a rare earth element, at least one of CO, Mg, and Ca, at least one of K, Ilb, and Cs, and Cr as a subcomponent. In addition, borosilicate glass oxide 6, Al, and Ga are further added as subcomponents.

Inのうち少なくとも一種を添加したことを特徴とする
電圧非直線抵抗体が提供される。
Provided is a voltage nonlinear resistor characterized in that at least one type of In is added.

本発明に従う電圧非直線抵抗体は、一般にはZnOと添
加成分の金属又は化合物の混合物を酸素含有雰囲気のも
とで高τ品で焼成し、焼結させることによって製造され
る。
The voltage nonlinear resistor according to the present invention is generally manufactured by firing and sintering a mixture of ZnO and an additive metal or compound in a high τ product in an oxygen-containing atmosphere.

通常添加成分は金、;4酸化物の形で添加されるが、焼
成過程で酸化物になり得る化合物、例えば炭酸塩、水酸
化物、弗化物およびその溶液なども用いることができあ
るい―単体元素の形で用い°〔焼成過程で酸化物にする
こともできる。
Usually, the additive component is gold, which is added in the form of tetraoxide, but compounds that can become oxides during the firing process, such as carbonates, hydroxides, fluorides, and their solutions, can also be used. It is used in the form of a single element (it can also be converted into an oxide during the firing process).

特に好ましい方法によれば、本発明の電圧非直線抵抗体
は、ZnO粉末に添加成分金属又は化合物の粉末を十分
に混合し、焼成前に空気中で500〜1000℃で数時
間仮焼し、仮焼物を十分に粉砕して所定の形状に成形し
、次いで望気中で1100’〜1400℃程度の温度で
数時間焼成することにより製造される。1100℃より
低い焼成温度では焼結が不十分で特性が不安定である。
According to a particularly preferred method, the voltage nonlinear resistor of the present invention is prepared by thoroughly mixing ZnO powder with powder of an additive metal or compound, and calcining the mixture in air at 500 to 1000°C for several hours before firing. It is manufactured by thoroughly crushing the calcined material, molding it into a predetermined shape, and then firing it in open air at a temperature of about 1100' to 1400° C. for several hours. If the firing temperature is lower than 1100°C, the sintering will be insufficient and the properties will be unstable.

また1400℃より筋い温度では均質な焼結体を得るこ
とが困難となり、電圧非直線性が低下し、特性の制御な
どの再現性に難点があり、実用に供する製品を得がたい
Further, at temperatures higher than 1400°C, it becomes difficult to obtain a homogeneous sintered body, voltage nonlinearity decreases, and there are difficulties in reproducibility such as control of characteristics, making it difficult to obtain a product for practical use.

〔発明の実施例〕[Embodiments of the invention]

ここで本発明をさらに例示するために実施例を示す。 Examples are now presented to further illustrate the invention.

実施例 ZnO粉末にPr6O11,co304e Mgo、 
K2co3. Cr2O3゜A1203粉末を後記の第
2表に記載の所定の原子%に相当する量で添加し、更に
第1表に示した組成のホウケイ酸ガラスAを所定の重量
%加え十分に混合した後、500〜1000℃で数時間
仮焼した。
Example ZnO powder contains Pr6O11, co304e Mgo,
K2co3. Cr2O3゜A1203 powder was added in an amount corresponding to the predetermined atomic percent listed in Table 2 below, and borosilicate glass A having the composition shown in Table 1 was added in a predetermined weight percent and thoroughly mixed. Calcining was performed at 500 to 1000°C for several hours.

次いで仮焼物を十分に粉砕し、バインダーを加えて直径
17wRの円板状に加圧成型し、1100 ’U 〜1
400℃で望気中で1時間焼成して焼結体を得た。この
様にして得られた焼結体を厚さ2項の試料に研磨し・そ
の両面に電極を焼付けて素子を作り、その’+li気的
特性的特性した。
Next, the calcined product was thoroughly crushed, a binder was added, and it was pressure-molded into a disc shape with a diameter of 17 wR, and the shape was 1100'U~1.
A sintered body was obtained by firing at 400° C. for 1 hour in open air. The sintered body thus obtained was polished into a sample with a thickness of 2 terms, electrodes were baked on both sides of the sample, an element was made, and its +li gas characteristics were evaluated.

電気的特性としては、5℃におい−(素子にl tnA
の電流を流した時の電極間電圧V+ mA、 l mA
〜]OmAでの非直線指数αならひに長波尾サージ社流
耐量として、2m方、100Aの矩形成電流を加回印加
して前後のVlmAの変化をめた。また課電寿命特性と
して、直流20 mAを5分間通電し、前後でlμA電
流を流した時の電極1g1電圧v1μAの変化をめた。
The electrical characteristics are as follows:
The voltage between the electrodes when a current of V+ mA, l mA is applied
~] Non-linear index α at OmA As a long wave tail surge current withstand capacity, a rectangular forming current of 100A in 2 m direction was applied once and the change in VlmA before and after was measured. In addition, as the life characteristics of the applied voltage, we measured the change in the electrode 1g1 voltage v1μA when a DC current of 20 mA was applied for 5 minutes and a current of 1μA was passed before and after.

非直線指数αは、素子電流Iの電圧Vに対する変化を次
式に近似して得られる。
The nonlinear index α is obtained by approximating the change in the element current I with respect to the voltage V by the following equation.

I = (V/C)″ ここで、Cは電流密度がi 1171に/4″のときの
素子の単位厚さ当りの電圧である。電圧非直線抵抗体の
配合組成を種々変えたときの電気的特性の測定結果を第
2表に記す。第2表に示した配合組成は、原料中の各成
分金属元素の原子数の総和に対する添カリ元素の原子数
の比から算出される原子%で示されている。またボウケ
イ赦ガラスは、総量に対第1表 第2表 第 2表 (つづき) 第2表に示す試料醜1けz−yLOにPr、Co、Mg
* K。
I = (V/C)'' where C is the voltage per unit thickness of the element when the current density is i 1171/4''. Table 2 shows the measurement results of electrical characteristics when the composition of the voltage nonlinear resistor was varied. The compositions shown in Table 2 are expressed in atomic % calculated from the ratio of the number of atoms of the added potassium element to the total number of atoms of each component metal element in the raw materials. In addition, the amount of Pr, Co, and Mg in the samples shown in Table 2 is shown in Table 1, Table 2, Table 2 (continued)
*K.

Crのみを添加して製造した従来の焼結体に相当しその
長波尾サージ電流特性は−7,54%、課電寿命特性は
−20,1%、非直線指数は41である。本発明の目的
である長波尾サージ電流耐量が良好な、即ち−75,4
%より0%に近く、課電寿命特性が向上した、即F−)
−20,1%より0%に近い試料は、第1表よりm3〜
随6. Na9〜随12.1m15〜N117. m2
0〜HI122 、−24〜Ta 26 、 m 29
〜ten 32 、 N133〜* 35である。この
うち試料m 32 、 m 35は非直線指数αが低く
実用忙供さない。従って、Prは0808〜5.0原子
%、COは0.1〜10原子%、Mgは0.01〜5.
0原子%、Kは0.01〜1.0原子%、Crは0.0
1〜1.0原子%、AIはl×10〜5×10 原子%
の範囲で添加する必要がある。
This corresponds to the conventional sintered body manufactured by adding only Cr, and its long wave tail surge current characteristics are -7.54%, the energized life characteristics are -20.1%, and the nonlinearity index is 41. The object of the present invention is to have good long wave tail surge current withstand capability, i.e. -75,4
%, closer to 0%, improved charging life characteristics, immediate F-)
-20. Samples closer to 0% than 1% are m3~ from Table 1.
Part 6. Na9~12.1m15~N117. m2
0~HI122, -24~Ta26, m29
~ten 32, N133~*35. Among these, samples m 32 and m 35 have a low nonlinear index α and are not suitable for practical use. Therefore, Pr is 0808 to 5.0 at%, CO is 0.1 to 10 at%, and Mg is 0.01 to 5.0 at%.
0 at%, K is 0.01 to 1.0 at%, Cr is 0.0
1 to 1.0 at%, AI is l×10 to 5×10 at%
It is necessary to add within this range.

第2表から明らかなように、副成分としてPr。As is clear from Table 2, Pr is a subcomponent.

Co、Mg、Kを含む糸にはホウケイ酸ガラスおよびA
Iを添加することにより、長波尾サージ電流耐量と課電
寿命特性が大幅に改良される。これに、ZnOニP r
 、 CO、Mg + K +ホウケイ酸ガラス、AI
が共存して初めて達成されるものである。これらの副成
分を単独に添加すると、電圧非直線性は極めて悪く1は
ばオーミックな特性しか得られず、実用に供することが
できない。
Yarns containing Co, Mg, and K contain borosilicate glass and A
By adding I, the long wave tail surge current withstand capacity and the charging life characteristics are significantly improved. In addition, ZnO NiP r
, CO, Mg + K + borosilicate glass, AI
This can only be achieved when the two coexist. If these subcomponents are added alone, voltage nonlinearity will be extremely poor and only baohmic characteristics will be obtained, making it impossible to put them to practical use.

また第1表に示したA以外の組成のホウケイ酸ガラスに
ついても、Aの場合と同様に長波尾サージ耐量および課
電寿命特性が向上した。これを第3表に示す。
In addition, borosilicate glasses having compositions other than A shown in Table 1 also showed improved long-wave tail surge resistance and charging life characteristics as in the case of A. This is shown in Table 3.

第2,3表においては希土類元素としてPrについての
み例示したが、Pr以外の希土類元素あるいは2種類以
上の希土類元素についても、ホウケイ酸ガラスおよびA
Iの添加により、 Pr単独の場合と同様優れた非直線
性を失わずに長波尾サージ電流耐量と課電寿命特性の大
巾な改良がなされることが見出された1、これらの結果
を第4表に示す。
In Tables 2 and 3, only Pr is exemplified as a rare earth element, but rare earth elements other than Pr or two or more types of rare earth elements may also be used for borosilicate glass and A.
It was found that the addition of I significantly improved the long-wave tail surge current withstand capacity and charge life characteristics without losing the excellent nonlinearity as in the case of Pr alone1. It is shown in Table 4.

また、MgO代わりにCaj!igおよびCaが共存し
た場合、Kの代わりニRb、Csおよびこれらの元素が
共存した場合あるいはAtの代わりにGa、Inを用い
た場合も同様の効果が得られる。これらを第5表から第
7表に示す。
Also, Caj! instead of MgO! Similar effects can be obtained when ig and Ca coexist, when Rb, Cs and these elements coexist instead of K, or when Ga and In are used instead of At. These are shown in Tables 5 to 7.

なお、ホウケイ酸ガラスの添加量は実施例において示し
たように5 X 10−’ ffi量%〜lXl0−2
重量%の範囲であることが望ましく、この範囲を越えて
添加すると非直線指数が低下1−るため実用に供第4表 第5表 M6表 第7表 〔発明の効果〕 以上実施例により説明してきた様に、酸化亜鉛を主成分
とし、これに少なくとも一種の希土類元素を総量で0.
08〜5.0原子%、コバルトを0.1〜10.0i子
%、マグネシウム、カルシウムのうち量で0.O1〜1
.0原子%、クロムを0.01〜1.0原子%、アルミ
ニウム、ガリウム、インジウムのうち少な(とも一種を
総量で1xlO〜5×10 原子%より成る組成にさら
にホウケイ酸ガラスを添加することにより、長波尾サー
ジ耐縫、課電寿命の浸れた電圧非直線抵抗素子が得られ
る。
Note that the amount of borosilicate glass added is from 5 X 10-'ffi amount% to lXl0-2 as shown in the examples.
It is desirable that the amount is in the range of % by weight, and if it is added in excess of this range, the non-linear index will decrease, so it is not practical.Table 4, Table 5, Table 5, Table 7. As mentioned above, zinc oxide is the main component, and at least one rare earth element is added to this in a total amount of 0.
08 to 5.0 at%, cobalt at 0.1 to 10.0 at%, and 0.0 at % of magnesium and calcium. O1~1
.. By further adding borosilicate glass to a composition consisting of 0 at%, 0.01 to 1.0 at% of chromium, and a small amount of one of aluminum, gallium, and indium (both in total amount of 1xlO to 5x10 at%). , a voltage nonlinear resistance element with long wave tail surge resistance and a long life when applied with electricity can be obtained.

Claims (1)

【特許請求の範囲】 1)酸化亜鉛を主成分とし、これに副成分として少なく
とも一種の希土類元素を総量で0.08〜5.0原子%
、コバルトを0.1〜10.0 原子%、マグネシウム
、カルシウムのうち少なくとも一種を0.O1〜5.0
原子%、カリウム、セシウム、ルビジウムのうち少なく
とも一種を総量で0.01〜1.0原子%、クロムを0
.O1〜1.0原子、アルミニウム、ガリウム、インジ
ウムのうち少なくとも一種を総量で1xlO〜5×10
 原子%の範囲で添加して成る組成に、さらにホウケイ
酸ガラスを添加し、焼成してなることを特徴とする電圧
非直線抵抗素子。 2)特許請求範囲第1項記載の素子において、ホウケイ
酸ガラスを、ホウ素に換算して5×lθ 〜1 1×lO原子%添加することを特徴とする電圧非直線抵
抗素子。
[Claims] 1) Zinc oxide as a main component, and at least one rare earth element as a subcomponent in a total amount of 0.08 to 5.0 atomic %.
, 0.1 to 10.0 atom % of cobalt, and 0.1 to 10.0 atom % of at least one of magnesium and calcium. O1~5.0
atomic%, at least one of potassium, cesium, and rubidium in a total amount of 0.01 to 1.0 atomic%, and chromium in a total amount of 0.01 to 1.0 atomic%.
.. 1 to 1.0 atoms of O, at least one of aluminum, gallium, and indium in a total amount of 1xlO to 5x10
1. A voltage nonlinear resistance element, characterized in that it is made by further adding borosilicate glass to a composition containing the additives in an atomic percent range, and firing the mixture. 2) A voltage nonlinear resistance element according to claim 1, characterized in that borosilicate glass is added in an amount of 5 x lθ to 11 x lO atomic % in terms of boron.
JP58215366A 1983-11-16 1983-11-16 Voltage nonlinear resistance element Granted JPS60107802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58215366A JPS60107802A (en) 1983-11-16 1983-11-16 Voltage nonlinear resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58215366A JPS60107802A (en) 1983-11-16 1983-11-16 Voltage nonlinear resistance element

Publications (2)

Publication Number Publication Date
JPS60107802A true JPS60107802A (en) 1985-06-13
JPH0142613B2 JPH0142613B2 (en) 1989-09-13

Family

ID=16671098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58215366A Granted JPS60107802A (en) 1983-11-16 1983-11-16 Voltage nonlinear resistance element

Country Status (1)

Country Link
JP (1) JPS60107802A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755716A (en) * 1986-07-21 1988-07-05 Mitsui Toatsu Chemicals, Inc. Filter for CRT screen
US4839736A (en) * 1987-07-06 1989-06-13 Mitsui Toatsu Chemicals, Inc. Filter for CRT screen
US5640136A (en) * 1992-10-09 1997-06-17 Tdk Corporation Voltage-dependent nonlinear resistor
JP2012516825A (en) * 2009-02-03 2012-07-26 エプコス アクチエンゲゼルシャフト Varistor ceramic, multilayer component including varistor ceramic, and method for producing varistor ceramic
JP2013503474A (en) * 2009-08-27 2013-01-31 アモテック・カンパニー・リミテッド ZnO-based varistor composition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755716A (en) * 1986-07-21 1988-07-05 Mitsui Toatsu Chemicals, Inc. Filter for CRT screen
US4839736A (en) * 1987-07-06 1989-06-13 Mitsui Toatsu Chemicals, Inc. Filter for CRT screen
US5640136A (en) * 1992-10-09 1997-06-17 Tdk Corporation Voltage-dependent nonlinear resistor
JP2012516825A (en) * 2009-02-03 2012-07-26 エプコス アクチエンゲゼルシャフト Varistor ceramic, multilayer component including varistor ceramic, and method for producing varistor ceramic
JP2013503474A (en) * 2009-08-27 2013-01-31 アモテック・カンパニー・リミテッド ZnO-based varistor composition

Also Published As

Publication number Publication date
JPH0142613B2 (en) 1989-09-13

Similar Documents

Publication Publication Date Title
JPS60107802A (en) Voltage nonlinear resistance element
JPH0584641B2 (en)
JPS5965406A (en) Voltage nonlinear resistor
JPS5982704A (en) Voltage nonlinear resistor
JPS594104A (en) Voltage nonlinear resistor
JPS5982702A (en) Voltage nonlinear resistor
JPS594103A (en) Voltage nonlinear resistor
JPS6046006A (en) Voltage nonlinear resistor
JPS594105A (en) Voltage nonlinear resistor
JPS5982703A (en) Voltage nonlinear resistor
JPS6046004A (en) Voltage nonlinear resistor
JPS5818902A (en) Voltage nonlinear resistance porcelain
JPS6046005A (en) Voltage nonlinear resistor
JPS58223304A (en) Voltage nonlinear resistor
JPS5944806A (en) Voltage nonlinear resistance porcelain
JPS6321327B2 (en)
JPS5818901A (en) Voltage nonlinear resistance porcelain
JPH03278404A (en) Voltage non-linear resistor
JPS6321324B2 (en)
JPS59124103A (en) Voltage nonlinear resistance porcelain
JPS6214924B2 (en)
JPS58154207A (en) Voltage nonlinear resistance porcelain
JPS644646B2 (en)
JPS6330763B2 (en)
JPS644647B2 (en)