JPH02196401A - Voltage dependent nonlinear resistor - Google Patents
Voltage dependent nonlinear resistorInfo
- Publication number
- JPH02196401A JPH02196401A JP1015561A JP1556189A JPH02196401A JP H02196401 A JPH02196401 A JP H02196401A JP 1015561 A JP1015561 A JP 1015561A JP 1556189 A JP1556189 A JP 1556189A JP H02196401 A JPH02196401 A JP H02196401A
- Authority
- JP
- Japan
- Prior art keywords
- nonlinear resistor
- added
- 1mol
- zinc oxide
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001419 dependent effect Effects 0.000 title abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000011787 zinc oxide Substances 0.000 claims abstract description 15
- 239000007864 aqueous solution Substances 0.000 claims abstract description 4
- 150000003839 salts Chemical class 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011230 binding agent Substances 0.000 abstract description 2
- 239000011268 mixed slurry Substances 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 4
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010285 flame spraying Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- FYWSTUCDSVYLPV-UHFFFAOYSA-N nitrooxythallium Chemical compound [Tl+].[O-][N+]([O-])=O FYWSTUCDSVYLPV-UHFFFAOYSA-N 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical class [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
- YTQVHRVITVLIRD-UHFFFAOYSA-L thallium sulfate Chemical compound [Tl+].[Tl+].[O-]S([O-])(=O)=O YTQVHRVITVLIRD-UHFFFAOYSA-L 0.000 description 1
- 229940119523 thallium sulfate Drugs 0.000 description 1
- 229910000374 thallium(I) sulfate Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】 Ａ、産業上の利用分野 この発明は電圧非直線抵抗体に関する。[Detailed description of the invention] A. Industrial application field The present invention relates to voltage nonlinear resistors.
Ｂ１発明の概要
この発明は電圧非直線抵抗体において、酸化亜鉛（Ｚｎ
Ｏ）を主成分とする電圧非直線抵抗体木形成する際に、
Ｔ＆を１−１００ ｐ ｐ ｍ含有させたことにより、
制限電圧比、インパルス劣化、ＡＣワットロスの改善を
図るものである。B1 Summary of the Invention This invention provides a voltage nonlinear resistor that uses zinc oxide (Zn
When forming a voltage nonlinear resistor tree whose main component is O),
By containing 1-100 ppm of T&, the limiting voltage ratio, impulse deterioration, and AC watt loss are improved.
Ｃ１従来あ技術
ＺｎＯ系非直線低抗体はＺｎＯにＢ ｉ２０３゜ＣＯｙ
ｏａ、 Ｓ ｂ １０３などを添加して１０００℃以上
で焼結して形成される。このようにじて形成された非直
線抵抗体の内部はＺｎＯを中心とする結晶粒と、Ｂｉａ
Ｏａを中心とするその他の添加物を含む粒界層とからな
っている。この非直線性は主にＺｎＯ結晶粒子と粒界層
の界面における電気特性に基づくものと考えられる。従
って、これらの層に不純物イオンが含まれることにより
、非直線性が大きく左右される。C1 Conventional technology ZnO-based non-linear low antibody is B i203゜COy on ZnO
It is formed by adding OA, Sb 103, etc. and sintering at 1000°C or higher. The interior of the nonlinear resistor thus formed consists of crystal grains centered on ZnO and vias.
It consists of a grain boundary layer containing mainly Oa and other additives. This nonlinearity is considered to be mainly based on the electrical characteristics at the interface between the ZnO crystal particles and the grain boundary layer. Therefore, nonlinearity is greatly influenced by the inclusion of impurity ions in these layers.
また、前記粒界層における抵抗は大電流域においては無
視され、ＺｎＯ粒子の固有抵抗により電圧の立ち上がり
が見られるようになる。これにより、ＺｎＯ粒子の固有
抵抗は下げる必要がある。Further, the resistance in the grain boundary layer is ignored in a large current range, and a voltage rise is observed due to the specific resistance of the ZnO particles. Accordingly, it is necessary to lower the specific resistance of the ZnO particles.
このため、通常、Ａ（２，Ｇａ、Ｉｎイオンなどが使わ
れている。For this reason, A(2, Ga, In ions, etc.) are usually used.
Ｄ０発明が解決しようとする課題
しかし、上記イオンを使用すると、ＺｎＯ粒子の固有抵
抗を下げ、制限電圧比を改善する働きはあるが、非直線
指数およびインパルス劣化特性などはむしろ悪くする問
題がある。従って、総合的には添加量には限界があり、
これら３つの特性をどれも改善することはできなかった
。D0 Problems to be Solved by the Invention However, when the above ions are used, although they work to lower the specific resistance of ZnO particles and improve the limiting voltage ratio, there is a problem that they actually worsen the nonlinear index and impulse deterioration characteristics. . Therefore, overall there is a limit to the amount added.
None of these three properties could be improved.
この発明は上記の事情に鑑みてなされたもので、制限電
圧比、インパルス劣化およびＡＣワットロス特性を改善
する電圧非直線抵抗体を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a voltage nonlinear resistor that improves the limiting voltage ratio, impulse deterioration, and AC watt loss characteristics.
Ｅ１課題を解決するための手段
この発明は酸化亜鉛を主成分とし、これに少なくともＢ
１ｔｏ３．Ｃｏｔ’３．５ｂｔＯ１の如き成分を含有
させて、非直線抵抗体を形成する際、前記各成分の他に
Ｔ１２を加え、このＴＩ２の含有量を１〜１１００ｐｐ
含有させることを特徴とするものである。E1 Means for Solving the Problem This invention contains zinc oxide as a main component, and contains at least B.
1to3. When forming a non-linear resistor by containing a component such as Cot'3.5btO1, T12 is added in addition to the above components, and the content of TI2 is adjusted to 1 to 1100 ppp.
It is characterized by containing.
また、前記ＴＩ２の形態は酸化物、塩または水溶液とし
たことを特徴とするものである。Further, the form of TI2 is characterized in that it is an oxide, a salt, or an aqueous solution.
Ｆ１作用
Ｔｌの添加１を増加させることにより、制限電圧比、イ
ンノ゛・ルス劣化、ＡＣワットロスの３つの特性の改善
を図る。By increasing the addition 1 of F1 effect Tl, the three characteristics of limiting voltage ratio, in-noise deterioration, and AC watt loss are improved.
Ｇ、実施例 以下この発明の一実施例を詳細に説明する。G. Example An embodiment of the present invention will be described in detail below.
電圧非直線抵抗体は次のように構成される。The voltage nonlinear resistor is constructed as follows.
ＺｎＯ９４，５ｍｏ１％、Ｂ １２Ｏ３ １ｍｏ １％
。ZnO94.5mo1%, B12O3 1mo1%
.
ＣｏｔＯ３１ｍｏ１％、５ｂｔＯ３１ｍｏ１％Ｍｎ Ｏ
ｙ、 Ｃｒ ｔｏ３． Ｎ ｉ Ｏを各々０．５ｍｏ１
％さらに、ＳｉＯ，１ｍｏ１％を秤量し、これらの合計
重量と同量の有機バインダー水溶液を加え、これに硝酸
タリウム（ＴｌＮＯ３）を所定量加えて、ボールミルで
混合してスラリーとする。この混合スラリーを乾燥、造
粒した後、円板に加圧成形し、１１００〜１３００℃で
焼成して６５φの焼結体を得る。得られた焼結体は研磨
して両端面にアルミニウムの電極を溶射して電圧非直線
抵抗体を得る。CotO31mo1%, 5btO31mo1%MnO
y, Cr to3. 0.5mol each of N i O
% Furthermore, 1 mo 1 % of SiO is weighed, an organic binder aqueous solution of the same amount as the total weight of these is added, a predetermined amount of thallium nitrate (TlNO3) is added thereto, and the mixture is mixed in a ball mill to form a slurry. After drying and granulating this mixed slurry, it is pressure-formed into a disk and fired at 1100 to 1300°C to obtain a 65φ sintered body. The obtained sintered body is polished and aluminum electrodes are sprayed on both end faces to obtain a voltage nonlinear resistor.
上記のようにして電圧非直線抵抗体を作る場合、Ｔ（！
ＮＯ３の添加量を少しづつ増加させながら電圧非直線抵
抗体を作成し、その都度、制限電圧比。When making a voltage nonlinear resistor as described above, T(!
Create a voltage nonlinear resistor while increasing the amount of NO3 added little by little, and adjust the limiting voltage ratio each time.
インパルス劣化、ＡＣワットロスを計測したものが、第
１図から第３図の特性である。第１図はｌの添加含有量
に対する制限電圧比を計測したもので、この第１図の特
性図から制限電圧比に改善が見られるのはＴｌ添加量が
ｌｐｐｍから約１１００ｐｐぐらいまでである。そして
、ｔｐｐｍ以下においては後述のようにＴσの定量分析
精度の問題があり、１１００ｐｐ以上では添加しない場
合の特性と同じになってしまう問題がある。The characteristics shown in FIGS. 1 to 3 are the measurements of impulse deterioration and AC watt loss. FIG. 1 shows the measurement of the limiting voltage ratio with respect to the added content of 1. From the characteristic diagram shown in FIG. 1, improvement in the limiting voltage ratio can be seen when the added amount of Tl is from 1 ppm to about 1100 ppm. At tppm or less, there is a problem with the accuracy of quantitative analysis of Tσ as described later, and at 1100 ppm or more, there is a problem that the characteristics become the same as those without addition.
また、第２図のインパルス劣化および第３図のＡＣワッ
トロス特性においても第１図と同様に特性が改善される
のはｉｐｐｍ＝１００ｐｐｍの範囲である。Furthermore, in the impulse deterioration characteristics shown in FIG. 2 and the AC watt loss characteristics shown in FIG. 3, the characteristics are improved in the same way as in FIG. 1 in the range of ippm=100 ppm.
以上のように第１図から第３図に示すように、Ｔｌの添
加量を次第に増加させるに従って、制限電圧比、インパ
ルス劣化およびＡＣワットロス共に改善され、その添加
量が特にｉｐｐｍ以」二から１１００ｐｐまでにおいて
効果が得られろ。As shown in FIGS. 1 to 3, as the amount of Tl added is gradually increased, the limiting voltage ratio, impulse deterioration, and AC watt loss are improved. The effect can be obtained until then.
なお、ｉｐｐｍより少ない場合でも何らかの効果は得ら
れるが、Ｔｌの定量分析精度から判断して、ｌｐｐｍが
確認し得る限界である。一般的に上記分析においてら０
．Ｘ〜０．８ｐｐｍｌ不純物として含まれてしまう可能
性かある。また、１１００ｐｐより多い場合、ＴＩ２無
添加の特性に戻ってしまったり、あるいはさらに特性が
悪くなったりして、Ｔａ添加の効果がなくなってしまう
。Although some effect can be obtained even when the amount is less than ippm, lppm is the limit that can be confirmed, judging from the accuracy of quantitative analysis of Tl. Generally, in the above analysis, et al.
．． There is a possibility that it will be included as an impurity at ~0.8 ppml. Moreover, if the amount exceeds 1100 pp, the characteristics return to those without TI2 addition, or the characteristics deteriorate further, and the effect of Ta addition is lost.
上記実施例においては、Ｔｌを硝酸塩として添加したが
、その他の塩、例えば硫酸タリウム、酸化物としての添
加でもその効果は同様となる。In the above embodiment, Tl was added as a nitrate, but the same effect can be achieved by adding other salts such as thallium sulfate or oxide.
Ｈ６発明の効果
以上述べたように、この発明によれば、ＺｎＯを主成分
と干る電圧非直線抵抗体を形成する際に、Ｔｌをｌｌｐ
ｐｍ−１ｏＯｐｐ含有させるようにしたことにより、制
限電圧比、インパルス劣化（４ＸＩＯμＳｍ１ＯＯＫＡ
印加後の■、い劣化）およびＡＣワットロスの３つが同
時に改善される効果があり、電圧非直線抵抗体として優
れた特性が得られる。また、この発明では、開閉サージ
によるエネルギー耐量については何ら影響を与えずに同
等の効果を奏する。H6 Effects of the invention As described above, according to the invention, when forming a voltage nonlinear resistor mainly composed of ZnO, Tl is
By containing pm-1oOpp, the limiting voltage ratio and impulse deterioration (4XIOμSm1OOKA
It has the effect of simultaneously improving three factors: (1) (deterioration after application) and AC watt loss, and excellent characteristics as a voltage nonlinear resistor can be obtained. Furthermore, the present invention provides the same effect without any influence on the energy withstand capacity due to opening/closing surges.
第１図から第３図はこの発明の実施例により得られる特
性図を示し、第１図はＴｌ添加徹に対する制限電圧比特
性図、第２図はＴＩ２添加量に対するインパルス比特性
図、第３図はＴｌ添加量に対するＡＣワットロス特性図
である。
第１図
特性図
第２図
特性図
外２名
ＴＩの添加含有！ （ｐｐ曹）1 to 3 show characteristic diagrams obtained by the embodiments of the present invention, in which FIG. 1 is a characteristic diagram of the limiting voltage ratio with respect to the amount of Tl added, FIG. 2 is a characteristic diagram of the impulse ratio with respect to the amount of TI2 added, and FIG. The figure is an AC watt loss characteristic diagram with respect to the amount of Tl added. Figure 1 Characteristic diagram Figure 2 Characteristic diagram Two people outside the characteristic diagram include addition of TI! (pp soda)
Claims (2)
２Ｏ＿３，Ｃｏ＿２Ｏ＿３，Ｓｂ＿２Ｏ＿３の如き成分
を含有させて、非直線抵抗体を形成する際、前記各成分
の他にＴｌを加え、このＴｌの含有量を１〜１００ｐｐ
ｍ含有させることを特徴とする電圧非直線抵抗体。(1) Zinc oxide is the main component, and at least Bi_
When forming a non-linear resistor by containing components such as 2O_3, Co_2O_3, and Sb_2O_3, Tl is added in addition to the above-mentioned components, and the content of Tl is adjusted to 1 to 100 ppp.
A voltage nonlinear resistor characterized by containing m.
ことを特徴とする請求項１記載の電圧非直線抵抗体。(2) The voltage nonlinear resistor according to claim 1, wherein the form of the Tl is an oxide, a salt, or an aqueous solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1015561A JPH02196401A (en) | 1989-01-25 | 1989-01-25 | Voltage dependent nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1015561A JPH02196401A (en) | 1989-01-25 | 1989-01-25 | Voltage dependent nonlinear resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02196401A true JPH02196401A (en) | 1990-08-03 |
Family
ID=11892167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1015561A Pending JPH02196401A (en) | 1989-01-25 | 1989-01-25 | Voltage dependent nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02196401A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100370610B1 (en) * | 2000-09-22 | 2003-01-30 | 성실전자 주식회사 | High voltage discharge resistor and manufacturing method thereof |
| CN100361238C (en) * | 2004-11-22 | 2008-01-09 | 山东大学 | Multielement doped modified zinc oxide pressure sensitive material for lightning protection |
| CN111161932A (en) * | 2020-04-07 | 2020-05-15 | 湖南省湘电试研技术有限公司 | Lightning-protection annular zinc oxide resistance card for power distribution network and preparation method thereof |
-
1989
- 1989-01-25 JP JP1015561A patent/JPH02196401A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100370610B1 (en) * | 2000-09-22 | 2003-01-30 | 성실전자 주식회사 | High voltage discharge resistor and manufacturing method thereof |
| CN100361238C (en) * | 2004-11-22 | 2008-01-09 | 山东大学 | Multielement doped modified zinc oxide pressure sensitive material for lightning protection |
| CN111161932A (en) * | 2020-04-07 | 2020-05-15 | 湖南省湘电试研技术有限公司 | Lightning-protection annular zinc oxide resistance card for power distribution network and preparation method thereof |
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