KR960006325U - Deposition equipment for semiconductor manufacturing - Google Patents

Deposition equipment for semiconductor manufacturing

Info

Publication number
KR960006325U
KR960006325U KR2019940019425U KR19940019425U KR960006325U KR 960006325 U KR960006325 U KR 960006325U KR 2019940019425 U KR2019940019425 U KR 2019940019425U KR 19940019425 U KR19940019425 U KR 19940019425U KR 960006325 U KR960006325 U KR 960006325U
Authority
KR
South Korea
Prior art keywords
semiconductor manufacturing
deposition equipment
deposition
equipment
semiconductor
Prior art date
Application number
KR2019940019425U
Other languages
Korean (ko)
Other versions
KR0121221Y1 (en
Inventor
오승언
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019940019425U priority Critical patent/KR0121221Y1/en
Publication of KR960006325U publication Critical patent/KR960006325U/en
Application granted granted Critical
Publication of KR0121221Y1 publication Critical patent/KR0121221Y1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR2019940019425U 1994-07-30 1994-07-30 Depositing apparatus for semiconductor device manufacture KR0121221Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940019425U KR0121221Y1 (en) 1994-07-30 1994-07-30 Depositing apparatus for semiconductor device manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940019425U KR0121221Y1 (en) 1994-07-30 1994-07-30 Depositing apparatus for semiconductor device manufacture

Publications (2)

Publication Number Publication Date
KR960006325U true KR960006325U (en) 1996-02-17
KR0121221Y1 KR0121221Y1 (en) 1998-08-01

Family

ID=19389911

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019940019425U KR0121221Y1 (en) 1994-07-30 1994-07-30 Depositing apparatus for semiconductor device manufacture

Country Status (1)

Country Link
KR (1) KR0121221Y1 (en)

Also Published As

Publication number Publication date
KR0121221Y1 (en) 1998-08-01

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20050318

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee