KR960002492A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR960002492A KR960002492A KR1019940013731A KR19940013731A KR960002492A KR 960002492 A KR960002492 A KR 960002492A KR 1019940013731 A KR1019940013731 A KR 1019940013731A KR 19940013731 A KR19940013731 A KR 19940013731A KR 960002492 A KR960002492 A KR 960002492A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- forming
- semiconductor device
- oxide film
- diffusion region
- Prior art date
Links
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체소자의 제조방법에 관한 것으로서, 게이트전극을 폴리실리콘층과 불순물이 포함된 비정질 실리콘층으로 형성하고 일차로 저농도로 불순물을 이온주입한 후, 저온산화막으로 된 절연 스페이서를 상기 게이트전극의 측벽에 형성하고, 다시 이차로 고농도 불순물을 이온주입하여 LDD 구조의 확산영역을 갖는 반도체소자를 형성하였으므로, 확산영역 형성을 위한 이온주입 공정시 게이트전극 하부의 채널영역으로의 불순물 채널링을 상측의 비정질 실리콘층이 방지하며 문턱전류 및 문턱전압의 변화를 방지하여 소자동작의 신뢰성 및 공정수율을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, wherein a gate electrode is formed of a polysilicon layer and an amorphous silicon layer containing impurities, and after ion implantation of impurities at a low concentration, an insulating spacer made of a low temperature oxide film is used. Formed on the sidewalls of the semiconductor substrate, and secondly implanted with a high concentration of impurities to form a semiconductor device having a diffusion region having an LDD structure. Therefore, in the ion implantation process for forming the diffusion region, the impurity channeling to the channel region under the gate electrode The amorphous silicon layer prevents the change of the threshold current and the threshold voltage, thereby improving the reliability and process yield of device operation.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 종래 모스 전계효과 트랜지스터를 구비하는 반도체소자의 단면도,1 is a cross-sectional view of a semiconductor device having a conventional MOS field effect transistor,
제2도는 본 발명에 따른 모스전계효과 트랜지스터를 구비하는 반도체소자의 단면도.2 is a cross-sectional view of a semiconductor device having a MOS field effect transistor according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940013731A KR960002492A (en) | 1994-06-17 | 1994-06-17 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940013731A KR960002492A (en) | 1994-06-17 | 1994-06-17 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960002492A true KR960002492A (en) | 1996-01-26 |
Family
ID=66686322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940013731A KR960002492A (en) | 1994-06-17 | 1994-06-17 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960002492A (en) |
-
1994
- 1994-06-17 KR KR1019940013731A patent/KR960002492A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |