KR950030743A - Plasma Deposition Equipment and Nitride Film Forming Method Using The Same - Google Patents

Plasma Deposition Equipment and Nitride Film Forming Method Using The Same Download PDF

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Publication number
KR950030743A
KR950030743A KR1019940008070A KR19940008070A KR950030743A KR 950030743 A KR950030743 A KR 950030743A KR 1019940008070 A KR1019940008070 A KR 1019940008070A KR 19940008070 A KR19940008070 A KR 19940008070A KR 950030743 A KR950030743 A KR 950030743A
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KR
South Korea
Prior art keywords
nitride film
diffuser
supplied
high frequency
low frequency
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Application number
KR1019940008070A
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Korean (ko)
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KR0132005B1 (en
Inventor
안희복
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940008070A priority Critical patent/KR0132005B1/en
Publication of KR950030743A publication Critical patent/KR950030743A/en
Application granted granted Critical
Publication of KR0132005B1 publication Critical patent/KR0132005B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 소자의 제조공정에 사용되는 플라즈마 증착장비 및 이를 이용한 질화막 형성방법에 관한 것으로, 질화막 형성시 균일도가 감소되어 소자의 신뢰성이 저하되는 것을 방지하기 위하여 확산기(Diffuser)에는 고주파 발생기가 접속되고 히터블록(Heat Block)에는 저주파 발생기가 접속된 방응로를 사용하여 질화막(Notride Film)을 형성함에 있어서, 확산기를 통해 N2가스대신 Ar가스를 포함하는 반응 가스들이 반응로내로 유입되기전에 고주파를 공급하여 플라즈마(plasma)를 형성시킨 후 히터블록에 저주파가 공급되는 상태에서 웨이퍼 증착이 이루어지게 함으로써 필름의 균일도가 증가되어 소자의 신뢰성이 향상될 수 있는 플라즈마 증착장비 및 이를 이용한 질화막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma deposition apparatus used in a semiconductor device manufacturing process and to a nitride film forming method using the same, wherein a high frequency generator is connected to a diffuser in order to prevent the uniformity of the nitride film from being reduced, thereby reducing the reliability of the device. In the case of forming a nitride film by using a reactor connected to a low frequency generator in a heater block, a high frequency wave before the reaction gas containing Ar gas instead of N 2 gas flows into the reactor through the diffuser In the plasma deposition apparatus and the nitride film forming method using the same to increase the reliability of the device by increasing the uniformity of the film by forming a wafer after the plasma is formed by supplying the plasma to the low frequency supplied to the heater block It is about.

Description

플라즈마 증착장비 및 이를 이용한 질화막 형성방법Plasma Deposition Equipment and Nitride Film Forming Method Using The Same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 플라즈마 증착장비의 구조도.2 is a structural diagram of a plasma deposition apparatus according to the present invention.

Claims (5)

웨이퍼(2)가 장착되는 히터블록(3) 및 가스 배기구(8)를 포함하는 반응로(1)와, 상기 반응로(1) 내의 상부에 형성되며 접지부로부터 고주파 발생기(6) 및 제1필터(L)가 각각 접속되는 확산기(4)와 상기 확산기(4)와 접속되며 상기 반응로(1) 외부로부터 반응가스를 주입시키기 위한 가스 주입관(5)으로 이루어진 플라즈마 증착장비에 있어서, 상기 히터블록(3) 및 접지간에 각각 접속되는 저주파 발생기(7) 및 제2필터(C)로 이루어지는 것을 특징으로 하는 플라즈마 증착장비.A reactor 1 including a heater block 3 and a gas exhaust port 8 on which a wafer 2 is mounted, and formed in an upper portion of the reactor 1 and having a high frequency generator 6 and a first ground from a ground portion. In the plasma deposition apparatus comprising a diffuser (4) to which the filter (L) is connected, and a gas injection tube (5) for injecting a reaction gas from the outside of the reactor (1) connected to the diffuser (4), Plasma deposition equipment, characterized in that consisting of a low frequency generator (7) and the second filter (C) connected between the heater block (3) and the ground, respectively. 질화막 형성방법에 있어서, 반응가스를 가스 주입관(5)을 통해 확산기(4)에 공급시키는 단계와, 상기 단계로부터 고주파 발생기(6)를 동작시켜 상기 확산기(4)에 고주파가 공급되도록 하여 플라즈마를 생성시키는 단계와, 상기 단계로부터 저주파 발생기(7)를 동작시켜 히터블록(2)에 저주파가 공급되도록하여 웨이퍼(2) 표면에 반응물이 이온 충격 증착되는 단계로 이루어지는 것을 특징으로 하는 질화막 형성방법.In the method of forming a nitride film, the reaction gas is supplied to the diffuser 4 through the gas injection tube 5, and the high frequency generator 6 is operated from the step so that the high frequency is supplied to the diffuser 4 so that the plasma is supplied. And a low frequency is supplied to the heater block 2 by operating the low frequency generator 7 from the step so that the reactant is ion bombarded on the surface of the wafer 2. . 제 2항에 있어서 상기 반응 가스 Ar, SiH4및 NH3가 사용되는 것을 특징으로 하는 질화막 형성방법.The method of claim 2, wherein the reaction gases Ar, SiH 4 and NH 3 are used. 제2항에 있어서, 상기 확산기(A)에 고주파가 공급될 때 저주파는 제1필터(L)를 통해 접지로 흐르는 것을 특징으로 하는 질화막 형성방법.The method of claim 2, wherein when the high frequency is supplied to the diffuser (A), the low frequency flows to the ground through the first filter (L). 제2항에 있어서 상기 히터블록(2)에 저주파가 공급될 때 고주파는 제2필터(C)를 통해 접지로 흐르는 것을 특징으로 하는 질화막 형성방법.The method of claim 2, wherein when the low frequency is supplied to the heater block (2), the high frequency flows to the ground through the second filter (C). ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019940008070A 1994-04-18 1994-04-18 Pecvd apparatus and nitride film forming method thereby KR0132005B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940008070A KR0132005B1 (en) 1994-04-18 1994-04-18 Pecvd apparatus and nitride film forming method thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940008070A KR0132005B1 (en) 1994-04-18 1994-04-18 Pecvd apparatus and nitride film forming method thereby

Publications (2)

Publication Number Publication Date
KR950030743A true KR950030743A (en) 1995-11-24
KR0132005B1 KR0132005B1 (en) 1998-04-14

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KR1019940008070A KR0132005B1 (en) 1994-04-18 1994-04-18 Pecvd apparatus and nitride film forming method thereby

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100639517B1 (en) * 2000-06-09 2006-10-27 주성엔지니어링(주) Chemical vapor deposition equipment having a diffuser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100639517B1 (en) * 2000-06-09 2006-10-27 주성엔지니어링(주) Chemical vapor deposition equipment having a diffuser

Also Published As

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KR0132005B1 (en) 1998-04-14

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