KR950025847A - 콜리메이터 및 그 제조방법 - Google Patents
콜리메이터 및 그 제조방법 Download PDFInfo
- Publication number
- KR950025847A KR950025847A KR1019940003231A KR19940003231A KR950025847A KR 950025847 A KR950025847 A KR 950025847A KR 1019940003231 A KR1019940003231 A KR 1019940003231A KR 19940003231 A KR19940003231 A KR 19940003231A KR 950025847 A KR950025847 A KR 950025847A
- Authority
- KR
- South Korea
- Prior art keywords
- collimator
- base plate
- side wall
- wall surface
- cells
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000002245 particle Substances 0.000 claims abstract 4
- 238000004544 sputter deposition Methods 0.000 claims abstract 4
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims 2
- 238000003466 welding Methods 0.000 claims 2
- 229910000976 Electrical steel Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H01L21/203—
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Nuclear Medicine (AREA)
Abstract
성장되는 막의 균일성(uniformity) 및 낮은 결함 밀도(low defect density)를 얻을 수 있는 스퍼터링 장치의 콜리메이터(collimator)에 관하여 개시한다. 상기 콜리메이터는 상하로 관통되게 벌집모양으로 형성된 복수개의 셀들과, 상기 각 셀의 측벽 표면에 요철(凹凸)구조의 스크래치를 구비하여 상기 측벽 표면에 형성되는 입자의 부착력을 향상시킨다. 또한 각 셀의 측별 표면에 소정 간격, 소정 깊이의 요철형태로 스크래치가 형성되어 있기 때문에, 스퍼터링시 수평 이동성분입자의 부착력을 향상시켜 공정 진행중에 파티클의 발생을 억제할 수 있어, 반도체 장치의 신뢰성 및 스퍼터링 장비의 안정적 사용을 꾀할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한 콜리메이터를 도시한 사시도이다.
제4도는 상기 제3도에 도시한 콜리메이터의 한 셀을 확대하여 도시한 도면이다.
제5도는 상기 제3도에 도시한 콜리메이터의 한 셀의 일측면을 도시한 도면이다.
Claims (5)
- 육각기둥의 관통형 구조로 형성된 복수개의 셀들이 원통형 모양을 이루고, 상기 각 셀의 측벽 표면에 요철(凹凸)구조의 스크래치를 구비하여 상기 측벽 표면에 형성되는 입자의 부착력을 향상시키는 것을 특징으로 하는 콜리메이터.
- 제1항에 있어서, 상기 콜리메이터의 재질은 알루미늄, 티타늄, 텅스텐, 실리콘 및 스테인레스 스틸로 이루어진 군에서 선택된 어느 하나로 이루어진 것을 특징으로 하는 콜리메이터.
- 콜리메이터용 박판 재료를 직사각형 형태로 잘라 복수개의 기본 판재들을 형성하는 단계; 상기 기본 판재의 양쪽 표면에 소정 간격 및 소정깊이로 스크래채를 형성하는 단계; 상기 스크래치가 형성된 기본 판재를 육각 기둥의 관통형 구조로 만들기 위해 일정크기로 접는 단계; 및 상기 접혀진 기본 판재들을 서로 세워서 상기 기본판재와 상기 기본판재가 겹치는 부분을 용접하여, 육각 기둥의 관통형 구조의 셀을 복수개 형성하는 단계를 포함하는 것을 특징으로 하는 콜리메이터의 제조방법.
- 제3항에 있어서, 상기 기본 판재의 두께는 1mm이하인 것을 특징으로 하는 콜리메이터의 제조방법.
- 제1항에 기재된 콜리메이터를 이용하여 스퍼터링 하는 공정을 포함하는 반도체 장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR94003231A KR970009828B1 (en) | 1994-02-23 | 1994-02-23 | Fabrication method of collimator |
JP01097295A JP3781127B2 (ja) | 1994-02-23 | 1995-01-26 | コリメータの製造方法 |
CN95101479A CN1059474C (zh) | 1994-02-23 | 1995-01-28 | 准直器及其制造方法 |
US08/493,735 US5544771A (en) | 1994-02-23 | 1995-06-22 | Method for manufacturing a collimator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR94003231A KR970009828B1 (en) | 1994-02-23 | 1994-02-23 | Fabrication method of collimator |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950025847A true KR950025847A (ko) | 1995-09-18 |
KR970009828B1 KR970009828B1 (en) | 1997-06-18 |
Family
ID=19377625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR94003231A KR970009828B1 (en) | 1994-02-23 | 1994-02-23 | Fabrication method of collimator |
Country Status (4)
Country | Link |
---|---|
US (1) | US5544771A (ko) |
JP (1) | JP3781127B2 (ko) |
KR (1) | KR970009828B1 (ko) |
CN (1) | CN1059474C (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5795630A (en) * | 1993-11-01 | 1998-08-18 | Shapiro; Ted S. | Motorized spinning MYLAR illusion device |
US6000270A (en) * | 1997-06-03 | 1999-12-14 | Sjm Engineering, Inc. | Collimator having tapered edges and method of making the same |
JP2002306957A (ja) * | 2001-04-11 | 2002-10-22 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
JP2005504885A (ja) | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
SG126681A1 (en) * | 2001-07-25 | 2006-11-29 | Inst Data Storage | Oblique deposition apparatus |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US8066955B2 (en) * | 2003-10-17 | 2011-11-29 | James M. Pinchot | Processing apparatus fabrication |
US20050084072A1 (en) * | 2003-10-17 | 2005-04-21 | Jmp Industries, Inc., An Ohio Corporation | Collimator fabrication |
US6994245B2 (en) * | 2003-10-17 | 2006-02-07 | James M. Pinchot | Micro-reactor fabrication |
JP2007273490A (ja) * | 2004-03-30 | 2007-10-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
KR20060076445A (ko) | 2004-12-29 | 2006-07-04 | 동부일렉트로닉스 주식회사 | 스퍼터 장비 및 이를 이용한 금속 실리사이드막의 형성방법 |
US20090188097A1 (en) * | 2008-01-25 | 2009-07-30 | Siemens Power Generation, Inc. | Method of layered fabrication |
DE102011083422B4 (de) * | 2011-09-26 | 2017-08-10 | Siemens Healthcare Gmbh | Verfahren zur Herstellung eines Kollimators |
US9543126B2 (en) * | 2014-11-26 | 2017-01-10 | Applied Materials, Inc. | Collimator for use in substrate processing chambers |
JP6509553B2 (ja) * | 2014-12-19 | 2019-05-08 | 株式会社アルバック | スパッタリング装置 |
US9960024B2 (en) | 2015-10-27 | 2018-05-01 | Applied Materials, Inc. | Biasable flux optimizer / collimator for PVD sputter chamber |
JP6088083B1 (ja) * | 2016-03-14 | 2017-03-01 | 株式会社東芝 | 処理装置及びコリメータ |
USD1026054S1 (en) * | 2022-04-22 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
USD1025935S1 (en) * | 2022-11-03 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
USD1025936S1 (en) * | 2022-12-16 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
USD1026839S1 (en) * | 2022-12-16 | 2024-05-14 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
USD1024149S1 (en) * | 2022-12-16 | 2024-04-23 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2619438A (en) * | 1945-04-16 | 1952-11-25 | Sperry Corp | Method of making a grid structure |
US3247579A (en) * | 1964-05-18 | 1966-04-26 | Microwave Electronics Corp | Circuit fabrication method |
US4065046A (en) * | 1973-02-16 | 1977-12-27 | Brunswick Corporation | Method of making passage structures |
US4006073A (en) * | 1975-04-03 | 1977-02-01 | The United States Of America As Represented By The United States Energy Research And Development Administration | Thin film deposition by electric and magnetic crossed-field diode sputtering |
DE3634710A1 (de) * | 1986-10-11 | 1988-04-21 | Ver Glaswerke Gmbh | Vorrichtung zum vakuumbeschichten einer glasscheibe durch reaktive kathodenzerstaeubung |
US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
US5135629A (en) * | 1989-06-12 | 1992-08-04 | Nippon Mining Co., Ltd. | Thin film deposition system |
US5294320A (en) * | 1990-02-09 | 1994-03-15 | Applied Materials, Inc. | Apparatus for cleaning a shield in a physical vapor deposition chamber |
US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
-
1994
- 1994-02-23 KR KR94003231A patent/KR970009828B1/ko not_active IP Right Cessation
-
1995
- 1995-01-26 JP JP01097295A patent/JP3781127B2/ja not_active Expired - Fee Related
- 1995-01-28 CN CN95101479A patent/CN1059474C/zh not_active Expired - Fee Related
- 1995-06-22 US US08/493,735 patent/US5544771A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR970009828B1 (en) | 1997-06-18 |
CN1114784A (zh) | 1996-01-10 |
JPH07286271A (ja) | 1995-10-31 |
JP3781127B2 (ja) | 2006-05-31 |
CN1059474C (zh) | 2000-12-13 |
US5544771A (en) | 1996-08-13 |
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