KR950018640A - 열방식 스프레더를 포함하는 다이아몬드의 화학 증착 장치 - Google Patents
열방식 스프레더를 포함하는 다이아몬드의 화학 증착 장치 Download PDFInfo
- Publication number
- KR950018640A KR950018640A KR1019940036698A KR19940036698A KR950018640A KR 950018640 A KR950018640 A KR 950018640A KR 1019940036698 A KR1019940036698 A KR 1019940036698A KR 19940036698 A KR19940036698 A KR 19940036698A KR 950018640 A KR950018640 A KR 950018640A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- substrate assembly
- contact
- thermal spreader
- cooling element
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
본 발명은 구리로 만들어지고 열방식 스프레더 안에 삽입되거나 또는 그와 관련된 가열 수단을 가진 열방식 스프레더와 함께 기재 또는 기재를 보유하는 홀더가 되는 기재 조립체의 후방 접촉에 의해서 다이아몬드의 화학증착 장치에 있어 온도의 균일함과 제어를 개선한 것이다. 열방식 스프레더는 스테인레스 강으로 만들어지고, 또한 냉각재 통로를 가진 냉각 요소 열저항 유니트와 접촉한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 요소인 기재 조립체 중 하나의 구조를 통합한, 본 발명에 따른 장치의 바람직한 실시예중 하나의 단면도.
제2도는 기재 조립체의 또 다른 구조의 단면도.
Claims (11)
- 화학 증착법에 의한 다이아몬드제조 장치에 있어서 : 적어도 하나의 가열 필라멘트와; 용착된 다이아몬드를 수납할 수 있는 기재를 포함하며, 전방 다이아몬드 수납 측면과 배면을 가진 적어도 하나의 기재 조립체와 ; 열전도율이 적어도 약 0.5W/cm˚C인 금속으로 만들어지며, 전방측면과 배면을 가지며, 상기 전방측면은 상기 기재 조립체의 배면과 접촉하는, 열방식 스프레더와 ; 최대한 약 0.3W/cm˚C의 열전도율을 가진 고온 저항물질로 만들어지며, 전방측면과 배면을 가지며, 상기 전방측면은 상기 기재 조립체의 배면과 접촉하는 열저항 유니트; 및 상기 열저항 유니트의 배면과 접촉하며, 적어도 약 0.5-0.3W/cm˚C의 열전도율을 가진 금속으로 만들어진 냉각 요소를 포함하는 장치.
- 제1항에 있어서, 상기 기재 조립체는 평평한 후방 표면을 가지는 장치.
- 제2항에 있어서, 상기 열저항 유니트가 상기 냉각 요소와 접촉하는 패턴 영역을 가진 장치.
- 제3항에 있어서, 상기 접촉영역이 균일한 장치.
- 제3항에 있어서, 복수의 가열 필라멘트를 포함하는 장치.
- 제5항에 있어서, 상기 냉각요소는 그 안에 냉각재 통로를 가진 장치.
- 제5항에 있어서, 상기 기재 조립체는 그 자체가 기재인 평평한 플레이트로 구성된 장치.
- 제5항에 있어서, 상기 기재 조립체는 그 안에 장착된 적어도 하나의 기재와 함께 기재 홀더를 포함하는 장치.
- 제5항에 있어서, 상기 열방식 스프레더는 그 안에 또는 그것에 인접하게 있는 가열 수단을 가진 장치.
- 제9항에 있어서, 상기 가열 수단은 상기 열방식 스프레더내에 삽입되어 있는 장치.
- 제10항에 있어서, 상기 가열 수단은 복수의 카트리지 히터를 포함하는 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/172,797 | 1993-12-27 | ||
US08/172,797 US5397396A (en) | 1993-12-27 | 1993-12-27 | Apparatus for chemical vapor deposition of diamond including thermal spreader |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950018640A true KR950018640A (ko) | 1995-07-22 |
Family
ID=22629287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940036698A KR950018640A (ko) | 1993-12-27 | 1994-12-26 | 열방식 스프레더를 포함하는 다이아몬드의 화학 증착 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5397396A (ko) |
EP (1) | EP0664346A1 (ko) |
JP (1) | JPH07278813A (ko) |
KR (1) | KR950018640A (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19701696C2 (de) * | 1997-01-20 | 1999-02-18 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Beschichtung eines Substrates mittels eines chemischen Gasphasenabscheideverfahrens |
US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6147334A (en) * | 1998-06-30 | 2000-11-14 | Marchi Associates, Inc. | Laminated paddle heater and brazing process |
JP2000243542A (ja) * | 1999-02-24 | 2000-09-08 | Nhk Spring Co Ltd | ヒータユニット及びその製造方法 |
US6692574B1 (en) * | 1999-08-30 | 2004-02-17 | Si Diamond Technology, Inc. | Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber |
US7372001B2 (en) | 2002-12-17 | 2008-05-13 | Nhk Spring Co., Ltd. | Ceramics heater |
US20070295276A1 (en) * | 2004-12-22 | 2007-12-27 | Sokudo Co., Ltd. | Bake plate having engageable thermal mass |
US7652227B2 (en) * | 2006-05-18 | 2010-01-26 | Applied Materials, Inc. | Heating and cooling plate for a vacuum chamber |
US10192760B2 (en) * | 2010-07-29 | 2019-01-29 | Eugene Technology Co., Ltd. | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit |
US9343273B2 (en) * | 2008-09-25 | 2016-05-17 | Seagate Technology Llc | Substrate holders for uniform reactive sputtering |
US20100140790A1 (en) * | 2008-12-05 | 2010-06-10 | Seagate Technology Llc | Chip having thermal vias and spreaders of cvd diamond |
KR101481928B1 (ko) | 2010-12-23 | 2015-01-21 | 엘리멘트 식스 리미티드 | 합성 다이아몬드 물질의 도핑을 제어하는 방법 |
GB201021853D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
GB201021913D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
GB201021860D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
DE102014223301B8 (de) * | 2014-11-14 | 2016-06-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2171877A1 (en) * | 1972-02-14 | 1973-09-28 | Commissariat Energie Atomique | Semiconductor coating appts - giving improved uniformity of coating |
US5340401A (en) * | 1989-01-06 | 1994-08-23 | Celestech Inc. | Diamond deposition cell |
US4953499A (en) * | 1989-08-03 | 1990-09-04 | General Electric Company | Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means |
US5023109A (en) * | 1989-09-06 | 1991-06-11 | General Atomics | Deposition of synthetic diamonds |
JP2864466B2 (ja) * | 1989-11-07 | 1999-03-03 | 株式会社ゼクセル | ダイヤモンド製造装置 |
US5160544A (en) * | 1990-03-20 | 1992-11-03 | Diamonex Incorporated | Hot filament chemical vapor deposition reactor |
US5071677A (en) * | 1990-05-24 | 1991-12-10 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
WO1992001828A1 (en) * | 1990-07-18 | 1992-02-06 | Sumitomo Electric Industries, Ltd. | Method and device for manufacturing diamond |
JPH0483795A (ja) * | 1990-07-26 | 1992-03-17 | Tokai Carbon Co Ltd | ダイヤモンド析出用基体の温度調整法 |
US5183529A (en) * | 1990-10-29 | 1993-02-02 | Ford Motor Company | Fabrication of polycrystalline free-standing diamond films |
ZA921208B (en) * | 1991-03-04 | 1993-02-24 | Gen Electric | Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom |
-
1993
- 1993-12-27 US US08/172,797 patent/US5397396A/en not_active Expired - Lifetime
-
1994
- 1994-12-15 EP EP94309374A patent/EP0664346A1/en not_active Withdrawn
- 1994-12-22 JP JP6318970A patent/JPH07278813A/ja not_active Withdrawn
- 1994-12-26 KR KR1019940036698A patent/KR950018640A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH07278813A (ja) | 1995-10-24 |
US5397396A (en) | 1995-03-14 |
EP0664346A1 (en) | 1995-07-26 |
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