KR950015693A - Method of inspecting metal wiring film properties of semiconductor devices - Google Patents

Method of inspecting metal wiring film properties of semiconductor devices Download PDF

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Publication number
KR950015693A
KR950015693A KR1019930025303A KR930025303A KR950015693A KR 950015693 A KR950015693 A KR 950015693A KR 1019930025303 A KR1019930025303 A KR 1019930025303A KR 930025303 A KR930025303 A KR 930025303A KR 950015693 A KR950015693 A KR 950015693A
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KR
South Korea
Prior art keywords
metal wiring
wiring film
metal
inspecting
film properties
Prior art date
Application number
KR1019930025303A
Other languages
Korean (ko)
Inventor
정창원
유진산
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930025303A priority Critical patent/KR950015693A/en
Publication of KR950015693A publication Critical patent/KR950015693A/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 반도체 소자의 금속배선막 특성 검사 방법에 있어서, 소자가 각각의 다이(2)로 절단될 영역인 웨이퍼(1)상의 스크라이브 라인(3)에 소정의 금속막 패턴인 금속배선막 특성 검사 패턴(4, 5, 6)을 형성하여 금속막의 선택적 제거 및 최종 열공정 완료 후 이 검사패턴(4, 5, 6)을 측정함으로써 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선막 특성 검사 방법에 관한 것으로, 각 단위 칩(chip)에 대한 개별적인 금속막의 물리적 특성을 검사할 수 있으며, 금속막 형성이후의 열공정에 의한 단선, 콘택홀 및 게이트 전극에서의 누설전류 발생, 소자의 전기적 특성에 대한 예상을 가능하게 하여 소자의 생산을 원활히 하여 주는 것과 동시에 소자의 전기적 특성을 향상시키는 효과가 있다.The present invention provides a method for inspecting metal wiring film characteristics of a semiconductor device, wherein the metal wiring film properties of a predetermined metal film pattern are examined on a scribe line 3 on the wafer 1, which is a region where the device is to be cut into each die 2. A method for inspecting metal wiring film characteristics of a semiconductor device, characterized by forming patterns (4, 5, 6) and measuring the inspection patterns (4, 5, 6) after selective removal of the metal film and completion of the final thermal process. It is possible to examine the physical characteristics of individual metal films for each unit chip, and to predict the disconnection, thermal current generation in contact holes and gate electrodes, and electrical characteristics of devices by thermal processes after metal film formation. By making it possible to facilitate the production of the device and at the same time has the effect of improving the electrical characteristics of the device.

Description

반도체 소자의 금속배선막 특성 검사 방법Method of inspecting metal wiring film properties of semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일실시예에 따라 금속배선막 특성 검사 패턴이 형성된 상태의 웨이퍼 구성도.1 is a wafer configuration in a state where the metal wiring film characteristic test pattern is formed in accordance with an embodiment of the present invention.

Claims (1)

반도체 소자의 금속배선막 특성 검사 방법에 있어서, 소자가 각각의 다이(2)로 절단될 영역인 웨이퍼(1)의 스크라이브 라인(3)에 소정의 금속막 패턴인 금속배선막 특성 검사 패턴(4, 5, 6)을 형성하여 금속막의 선택적 제거 및 최종 열공정 완료 후 이 검사패턴(4, 5, 6)을 측정함으로써 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선막 특성 검사 방법.In the metal wiring film characteristic inspection method of a semiconductor device, the metal wiring film characteristic inspection pattern 4 which is a predetermined metal film pattern in the scribe line 3 of the wafer 1 which is the area | region which an element will be cut | disconnected by each die | dye 2, And 5, 6) to measure the inspection pattern (4, 5, 6) after the selective removal of the metal film and the completion of the final thermal process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930025303A 1993-11-25 1993-11-25 Method of inspecting metal wiring film properties of semiconductor devices KR950015693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930025303A KR950015693A (en) 1993-11-25 1993-11-25 Method of inspecting metal wiring film properties of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930025303A KR950015693A (en) 1993-11-25 1993-11-25 Method of inspecting metal wiring film properties of semiconductor devices

Publications (1)

Publication Number Publication Date
KR950015693A true KR950015693A (en) 1995-06-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930025303A KR950015693A (en) 1993-11-25 1993-11-25 Method of inspecting metal wiring film properties of semiconductor devices

Country Status (1)

Country Link
KR (1) KR950015693A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100664858B1 (en) * 2004-12-31 2007-01-03 동부일렉트로닉스 주식회사 Module for Inspecting Metallic Structure of Semiconductor Device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100664858B1 (en) * 2004-12-31 2007-01-03 동부일렉트로닉스 주식회사 Module for Inspecting Metallic Structure of Semiconductor Device

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