KR950012881A - Semiconductor laser - Google Patents

Semiconductor laser Download PDF

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Publication number
KR950012881A
KR950012881A KR1019930021640A KR930021640A KR950012881A KR 950012881 A KR950012881 A KR 950012881A KR 1019930021640 A KR1019930021640 A KR 1019930021640A KR 930021640 A KR930021640 A KR 930021640A KR 950012881 A KR950012881 A KR 950012881A
Authority
KR
South Korea
Prior art keywords
grating
semiconductor laser
laser beam
eff
period
Prior art date
Application number
KR1019930021640A
Other languages
Korean (ko)
Other versions
KR100264775B1 (en
Inventor
이재호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930021640A priority Critical patent/KR100264775B1/en
Publication of KR950012881A publication Critical patent/KR950012881A/en
Application granted granted Critical
Publication of KR100264775B1 publication Critical patent/KR100264775B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저에 관한 것으로, 좀 더 상세하게는 활성층 영역(11)위에 형성된 그레이팅에 의해 레이저 빔을 방출하는 반도체 레이저에 있어서, 레이저 빔(15)이 한쪽방향으로만 방출되도록 그레이팅(14)을 링 형태로 형성시키므로써 반사에 의한 광손실을 줄일 수 있으며 유효 광출력을 훨씬 높일 수 있는 반도체 레이저에 관한 것이다.The present invention relates to a semiconductor laser, and more particularly, in a semiconductor laser that emits a laser beam by grating formed on the active layer region 11, the grating 14 so that the laser beam 15 is emitted in only one direction. The present invention relates to a semiconductor laser capable of reducing light loss due to reflection by forming a ring shape and further increasing the effective light output.

Description

반도체 레이저Semiconductor laser

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 반도체 레이저의 개략도이다.2 is a schematic diagram of a semiconductor laser of the present invention.

Claims (3)

활성층 영역(11)위에 형성된 그레이팅에 의해 레이저 빔을 방출하는 반도체 레이저에 있어서, 레이저 빔(15)이 한쪽방향으로만 방출되도록 그레이팅(14)을 링 형태로 형성시키는 것을 특징으로 하는 반도체 레이저.A semiconductor laser which emits a laser beam by grating formed on the active layer region (11), characterized in that the grating (14) is formed in a ring shape so that the laser beam (15) is emitted only in one direction. 제1항에 있어서, 상기 링형 그레이팅(14)의 주기가 하기의 식을 만족하는 것을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the period of the ring grating (14) satisfies the following equation. mλ = 2neffd cosθmλ = 2n eff d cosθ 여기서, neff :그레이팅을 포함하는 영역의 유효굴절율 d : 그레이팅 주기 θ : 빔의 입사각 λ : 빔의 파장 m : 정수Where n eff: effective refractive index of the region including grating d: grating period θ: beam incident angle λ: beam wavelength m: integer 제1항에 있어서, 상기 그레이팅(14)의 선단부(16)가 경면에 수직인 축과 약 0 내지 40°범위의 각을 이루는 것을 특징으로 하는 반도체 레이저.The semiconductor laser according to claim 1, wherein the tip portion (16) of the grating (14) forms an angle in the range of about 0 to 40 degrees with an axis perpendicular to the mirror surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021640A 1993-10-18 1993-10-18 Semiconductor laser KR100264775B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930021640A KR100264775B1 (en) 1993-10-18 1993-10-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930021640A KR100264775B1 (en) 1993-10-18 1993-10-18 Semiconductor laser

Publications (2)

Publication Number Publication Date
KR950012881A true KR950012881A (en) 1995-05-17
KR100264775B1 KR100264775B1 (en) 2000-09-01

Family

ID=19366087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930021640A KR100264775B1 (en) 1993-10-18 1993-10-18 Semiconductor laser

Country Status (1)

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KR (1) KR100264775B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100891490B1 (en) 2007-09-03 2009-04-06 전남대학교산학협력단 Ring type laser diode

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Publication number Publication date
KR100264775B1 (en) 2000-09-01

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