JP2002324940A5 - - Google Patents

Claims (5)

In an optical communication system comprising a laser chip, a first optical fiber optically coupled to the laser chip, and a second optical fiber cable optically coupled to the first optical fiber, The laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm, and the main element of the active layer that generates light is a layer made of Ga, In, N, As, or a layer made of Ga, In, As, and laser light. A surface-emitting type semiconductor laser device chip having a resonator structure including reflectors provided above and below the active layer, the reflector having a reflection wavelength of 1.1 μm or more. The refractive index of the material layer constituting the semiconductor layer is a semiconductor distributed Bragg reflector that periodically changes to slightly different values and reflects incident light by light wave interference, and the refraction Is made of AlxGa1-xAs (0 <x ≦ 1), the material layer with a large refractive index is made of AlyGa1-yAs (0 ≦ y <x ≦ 1), and the refractive index is small and large. The thickness of the hetero-spike buffer layer made of AlzGa1-zAs (0 ≦ y <z <x ≦ 1) between which the refractive index takes a value between small and large between the material layers is 5 nm to 50 nm. The semiconductor distributed Bragg reflector is a surface-emitting type semiconductor laser device chip that is a reflecting mirror in a range in which the reflectance change does not suddenly increase , and the length of the first optical fiber is An optical communication system characterized by being 1 mm or more. In an optical communication system comprising a laser chip, a first optical fiber optically coupled to the laser chip, and a second optical fiber cable optically coupled to the first optical fiber, In the laser chip, the main element of the active layer that generates light is a layer made of Ga, In, N, As, or a layer made of Ga, In, As, and is provided above and below the active layer to obtain laser light. A surface emitting semiconductor laser device chip having a resonator structure including a reflecting mirror, in which the refractive index of the material layer constituting the reflecting mirror periodically changes to slightly different values, and incident light interferes with light waves. And the material layer having a small refractive index is made of AlxGa1-xAs (0 <x ≦ 1), and the material having a large refractive index. Is AlyGa1-yAs (0 ≦ y <x ≦ 1), and AlzGa1-zAs (0 ≦ y <) where the refractive index takes a value between the small and large refractive index layers. A surface-emitting type semiconductor laser device chip, which is a reflecting mirror provided with a hetero spike buffer layer of z <x ≦ 1) having a thickness of 20 nm to 50 nm, is used as a light source, and the first optical fiber length An optical communication system characterized in that the length is 1 mm or more. In an optical communication system comprising a laser chip, a first optical fiber optically coupled to the laser chip, and a second optical fiber cable optically coupled to the first optical fiber, The laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm, and the main element of the active layer that generates light is a layer made of Ga, In, N, As, or a layer made of Ga, In, As, and laser light. In order to obtain a surface emitting semiconductor laser device chip having a resonator structure including reflectors provided above and below the active layer, the reflector has a reflection wavelength of 1.1 μm or more. The refractive index of the material layer constituting the semiconductor layer is a semiconductor distributed Bragg reflector that periodically changes to slightly different values and reflects incident light by light wave interference, and the refraction Is made of AlxGa1-xAs (0 <x ≦ 1), the material layer with a large refractive index is made of AlyGa1-yAs (0 ≦ y <x ≦ 1), and the refractive index is small and large. A reflecting mirror in which a hetero spike buffer layer made of AlzGa1-zAs (0 ≦ y <z <x ≦ 1) having a refractive index value between small and large is provided between the material layers in a thickness of 20 nm to 50 nm. An optical communication system characterized in that a surface-emitting type semiconductor laser device chip as described above is used as a light emission source, and the length of the first optical fiber is 1 mm or more.   In the optical communication system comprising a laser chip, a first optical fiber optically coupled to the laser chip, and a second optical fiber cable optically coupled to the first optical fiber, the laser chip The oscillation wavelength is 1.1 μm to 1.7 μm, and the main element of the active layer that generates light is a layer made of Ga, In, N, As, or a layer made of Ga, In, As, and obtains laser light. Therefore, a surface emitting semiconductor laser device chip having a resonator structure including reflectors provided above and below the active layer, the reflector having a reflection wavelength of 1.1 μm or more constitutes the chip. The semiconductor layer is a semiconductor distributed Bragg reflector that periodically changes the refractive index of the material layer to slightly different values and reflects incident light by light wave interference, and the refractive index is small. The material layer is made of AlxGa1-xAs (0 <x ≦ 1), and the material layer having a large refractive index is made of AlyGa1-yAs (0 ≦ y <x ≦ 1). The active layer and the reflector A surface emitting semiconductor laser chip having a non-light emitting recombination prevention layer comprising a GaxIn1-xPyAs1-y (0 <x ≦ 1, 0 <y ≦ 1) layer as a light emitting source An optical communication system characterized in that the length of the first optical fiber is 1 mm or more. Are cables and optically coupling the second optical fiber of the optical communication system according to any one of claims 1 to 4, in an optical transmission and reception system which combines light receiving unit for receiving light, the light receiving unit, A third optical fiber optically coupled to the second optical fiber cable; a light receiving element optically coupled to the third optical fiber; and the third optical fiber length of 1 mm or more. An optical communication system characterized by that.