JP2002324941A5 - - Google Patents

Claims (10)

A laser chip, a first optical fiber connected to the laser chip and receiving the laser light of the laser chip, a second optical fiber for transmission that transmits the light of the first optical fiber, and the second optical fiber In an optical transmission / reception system comprising a third optical fiber for receiving light and a light receiving means for receiving light from the third optical fiber, the laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm and generates light The main element of the active layer to be formed is a layer made of Ga, In, N, As, or a layer made of Ga, In, As, and includes reflectors provided above and below the active layer to obtain laser light A surface-emitting type semiconductor laser device chip having a resonator structure, wherein the reflecting mirror has a reflection wavelength of 1.1 μm or more, and a refractive index of a material layer constituting the reflecting mirror is different from small and large The material layer having a small refractive index is AlxGa1-xAs (0 <x ≦ 1), and the refractive index is large. The material layer of AlzGa1-yAs (0 ≦ y <x ≦ 1) and AlzGa1-zAs (0) in which the refractive index takes a value between small and large between the small and large material layers. ≦ y <z <x ≦ 1) The thickness of the heterospike buffer layer is 5 nm to 50 nm, and the reflecting mirror has a range in which the reflectance change of the semiconductor distributed Bragg reflector does not increase rapidly. An optical transmission / reception system using a surface emitting semiconductor laser element chip as described above as a light emission source. A laser chip, a first optical fiber connected to the laser chip and receiving the laser light of the laser chip, a second optical fiber for transmission that transmits the light of the first optical fiber, and the second optical fiber In an optical transmission / reception system comprising a third optical fiber that receives light and a light receiving means that receives light from the third optical fiber, the laser chip has Ga, In, N as the main elements of the active layer that generates light. Surface emitting semiconductor laser device having a resonator structure including a reflector made of As, a layer made of As, or a layer made of Ga, In, As, and provided on the upper and lower portions of the active layer to obtain laser light Semiconductor distributed Bragg reflection in which the refractive index of the material layer constituting the reflecting mirror is periodically changed to a value different from small and large, and the incident light is reflected by light wave interference And the material layer having a small refractive index is AlxGa1-xAs (0 <x ≦ 1), the material layer having a large refractive index is AlyGa1-yAs (0 ≦ y <x ≦ 1), and A hetero spike buffer layer made of AlzGa1-zAs (0 ≦ y <z <x ≦ 1) having a value between the small and large refractive index between the small and large material layers is 20 nm to 50 nm. An optical transmission / reception system characterized in that a surface-emitting type semiconductor laser device chip such as a reflecting mirror provided in a thickness is used as a light emission source. A laser chip, a first optical fiber connected to the laser chip and receiving the laser light of the laser chip, a second optical fiber for transmission that transmits the light of the first optical fiber, and the second optical fiber In an optical transmission / reception system comprising a third optical fiber for receiving light and a light receiving means for receiving the light of the third optical fiber, the laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm, and transmits light. Reflective mirrors provided on the upper and lower portions of the active layer in order to obtain laser light, in which the main element of the generated active layer is a layer made of Ga, In, N, As, or a layer made of Ga, In, As. A surface-emitting type semiconductor laser device chip having a resonator structure, wherein the reflecting mirror has a reflection wavelength of 1.1 μm or more, and a refractive index of a material layer constituting the reflecting mirror is different from a small size. The semiconductor layer is a semiconductor distributed Bragg reflector that periodically changes to a value and reflects incident light by light wave interference, and the material layer having a small refractive index is AlxGa1-xAs (0 <x ≦ 1), and the refractive index is The large material layer is AlyGa1-yAs (0 ≦ y <x ≦ 1), and AlzGa1-zAs (where the refractive index takes a value between small and large between the small and large material layers). Light characterized in that a surface-emitting type semiconductor laser device chip, which is a reflecting mirror provided with a hetero spike buffer layer of 0 ≦ y <z <x ≦ 1) having a thickness of 20 nm to 50 nm, is used as a light source. Transmission / reception system.   A laser chip, a first optical fiber connected to the laser chip and receiving the laser light of the laser chip, a second optical fiber for transmission that transmits the light of the first optical fiber, and the second optical fiber In an optical transmission / reception system comprising a third optical fiber for receiving light and a light receiving means for receiving the light of the third optical fiber, the laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm and generates light The active layer is a layer whose main element is made of Ga, In, N, As, or a layer made of Ga, In, As, and includes reflectors provided above and below the active layer to obtain laser light. A surface emitting semiconductor laser device chip having a resonator structure, wherein the reflection mirror has a reflection wavelength of 1.1 μm or more and a refractive index of a material layer constituting the reflection mirror is different from a small value and a large value. It is a semiconductor distributed Bragg reflector that changes incidentally and reflects incident light by light wave interference, and the material layer having a small refractive index is AlxGa1-xAs (0 <x ≦ 1), and the refractive index is large. The material layer is a reflector made of AlyGa1-yAs (0 ≦ y <x ≦ 1), and the main composition between the active layer and the reflector is GaxIn1-xPyAs1-y (0 <x ≦ 1, 0 <y). <1) An optical transmission / reception system characterized in that a surface emitting semiconductor laser element chip provided with a non-light emitting recombination prevention layer comprising a layer is used as a light emitting light source. 2. The semiconductor chip according to claim 1, wherein n laser diode elements are formed on the laser chip, and each of the first optical fiber, the second optical fiber, the third optical fiber, and the light receiving means is provided. 5. The optical transmission / reception system according to any one of items 1 to 4 . 6. The optical transmission / reception according to claim 5 , further comprising means for identifying that the light emitting surfaces of the n semiconductor laser elements and the light receiving surfaces of the n first optical fiber groups are in a one-to-one relationship with each other. system. 7. The optical transmission / reception system according to claim 6 , wherein the light emitting surface of the semiconductor laser element and the light receiving surface of the optical fiber are parallel to each other. 6. The positioning / coupling device according to claim 5 , further comprising: a light emitting surface of the n semiconductor laser elements and a light receiving surface of the n first optical fiber groups, which are opposed to each other on a one-to-one basis. Optical transmission / reception system. 6. The apparatus according to claim 5 , further comprising means for identifying that the light transmitting surface and the light receiving surface of each of the n first, second, and third optical fiber groups are in a one-to-one relationship with each other. Optical transmission / reception system. 6. The positioning / coupling device according to claim 5 , further comprising a light-emitting surface and a light-receiving surface of the n first, second, and third optical fiber groups that are opposed to each other on a one-to-one basis. The optical transmission / reception system described.