JP2002323646A5 - - Google Patents

Claims (7)

In an optical communication system connected to a laser chip and the laser chip, the laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm, and main elements of an active layer that generates light are from Ga, In, N, and As. A surface emitting semiconductor laser device chip having a resonator structure including a reflecting mirror provided on the upper and lower portions of the active layer in order to obtain laser light. The reflective mirror has a reflection wavelength of 1.1 μm or more, and the refractive index of the material layer constituting the reflective mirror periodically changes to a different value from small and large so that incident light is reflected by light wave interference, and is a semiconductor distributed Bragg reflector And the material layer with a small refractive index is AlxGa1-xAs (0 <x ≦ 1), the material layer with a large refractive index is AlyGa1-yAs (0 ≦ y <x ≦ 1), and Folding rate the thickness of the hetero spike buffer layer the refractive index composed of Alz Ga1-zAs takes a value between the small and large (0 ≦ y <z <x ≦ 1) between the small and large material layer, In an optical communication system using a surface-emitting type semiconductor laser device chip having a thickness of 5 nm to 50 nm as a light-emitting light source that is a reflecting mirror in a range in which the reflectance change of the semiconductor distributed Bragg reflecting mirror does not suddenly increase In this case, when the diameter of a circle inscribed in the light emitting portion of the surface emitting semiconductor laser element chip is d and the core diameter of the optical fiber is F, 0.5 ≦ F / d ≦ 2. Optical communication system. In a laser chip and an optical communication system connected to the laser chip, the first laser chip is a layer in which the main element of the active layer for generating light is made of Ga, In, N, As, or a layer made of Ga, In, As A surface-emitting type semiconductor laser device chip having a resonator structure including reflecting mirrors provided above and below the active layer in order to obtain a laser beam, wherein the material layer constituting the reflecting mirror is refracted The refractive index is a semiconductor distributed Bragg reflector that periodically changes to slightly different values and reflects incident light by light wave interference, and the material layer having a small refractive index is AlxGa1-xAs (0 <x ≦ 1). The material layer having a large refractive index is set to AlyGa1-yAs (0 ≦ y <x ≦ 1), and the refractive index has a value between the small and large material layers between the small and large material layers. AlzGa1- In an optical communication system using a surface-emitting type semiconductor laser device chip, which is a reflecting mirror provided with a hetero spike buffer layer made of As (0 ≦ y <z <x ≦ 1) in a thickness of 20 nm to 50 nm, as a light source. In this case, when the diameter of a circle inscribed in the light emitting portion of the surface emitting semiconductor laser element chip is d and the core diameter of the optical fiber is F, 0.5 ≦ F / d ≦ 2. Optical communication system. In an optical communication system connected to a laser chip and the laser chip, the laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm, and main elements of an active layer that generates light are Ga, In, N, As Or a layer made of Ga, In, As, and a surface emitting semiconductor laser device chip having a resonator structure including reflectors provided above and below the active layer to obtain laser light. The reflection mirror has a reflection wavelength of 1.1 μm or more, and the refractive index of the material layer constituting the reflection mirror periodically changes to a slightly different value, and reflects the incident light by light wave interference. The material layer having a small refractive index is AlxGa1-xAs (0 <x ≦ 1), the material layer having a large refractive index is AlyGa1-yAs (0 ≦ y <x ≦ 1), and in front A hetero spike buffer layer made of AlzGa1-zAs (0 ≦ y <z <x ≦ 1) having a value between the small and large refractive index between the small and large material layers is 20 nm to 50 nm. An optical communication system using a surface-emitting type semiconductor laser device chip as a light-emitting light source such as a reflecting mirror provided in a thickness, wherein a diameter of a circle inscribed in a light emitting portion of the surface-emitting type semiconductor laser device chip is d An optical communication system, wherein the core diameter of the optical fiber is F, and 0.5 ≦ F / d ≦ 2.   In an optical communication system connected to a laser chip and the laser chip, the laser chip has an oscillation wavelength of 1.1 μm to 1.7 μm, an active layer that generates light, and main elements are Ga, In, N, As Or a layer made of Ga, In, As, and a surface emitting semiconductor laser device chip having a resonator structure including reflectors provided above and below the active layer to obtain laser light. The reflection mirror has a reflection wavelength of 1.1 μm or more, and the refractive index of the material layer constituting the reflection mirror periodically changes to a value different from small and large, and reflects the incident light by light wave interference. In addition to a mirror, the material layer with a small refractive index is AlxGa1-xAs (0 <x ≦ 1), and the material layer with a large refractive index is AlyGa1-yAs (0 ≦ y <x ≦ 1). mirror A surface-emitting type semiconductor comprising a non-radiative recombination preventing layer comprising a GaxIn1-xPyAs1-y (0 <x ≦ 1, 0 <y ≦ 1) layer between the active layer and the reflecting mirror. A laser element chip is used as a light emitting light source. When a diameter of a circle inscribed in a light emitting portion of the surface emitting semiconductor laser element chip is d and a core diameter of the optical fiber is F, 0.5 ≦ F / d An optical communication system, wherein ≦ 2. A lens or lens system is disposed between the surface emitting semiconductor laser element chip and the optical fiber, and a diameter of a circle inscribed in the light emitting portion of the surface emitting semiconductor laser element chip is d, and the core diameter of the optical fiber When the a F, an optical communication system according to any one of claims 1 to 4, characterized in that the F / d ≦ 1. The optical communication system according to any one of claims 1 to 4, wherein the surface-emitting type semiconductor laser device chips and optical fibers are arranged in an array. 6. The optical communication system according to claim 5 , wherein the surface emitting semiconductor laser element chip, a lens or a lens system, and an optical fiber are arranged in an array.