KR950012832A - Manufacturing method of semiconductor laser - Google Patents

Manufacturing method of semiconductor laser Download PDF

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Publication number
KR950012832A
KR950012832A KR1019930020577A KR930020577A KR950012832A KR 950012832 A KR950012832 A KR 950012832A KR 1019930020577 A KR1019930020577 A KR 1019930020577A KR 930020577 A KR930020577 A KR 930020577A KR 950012832 A KR950012832 A KR 950012832A
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KR
South Korea
Prior art keywords
layer
active layer
undercut
forming
manufacturing
Prior art date
Application number
KR1019930020577A
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Korean (ko)
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KR970004499B1 (en
Inventor
채태일
유순재
박문규
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930020577A priority Critical patent/KR970004499B1/en
Publication of KR950012832A publication Critical patent/KR950012832A/en
Application granted granted Critical
Publication of KR970004499B1 publication Critical patent/KR970004499B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저의 제조방법에 관한 것으로서, 반도체 기판상에 형성되어 있는 제1클레드층, 활성층 및 제2클레드층을 소정 부분만 만도록 선택 에칭하는 식각 공정시 상기 활성층이 언더컷이 지도록 식각한 후, 소정 온도 이상에서 발생되는 질량 수송현상을 이용하여 동일 진공 튜브안에서 상기 언더컷을 메우는 매립층을 형성하였으므로, 활성층의 계면이 성장 공정 상이에서 공기 중에 장시간 노출되지 않으며, 계면의 열손상을 방지하여 점결함이나 선결함을 방지하고, 누설전류를 방지할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor laser, wherein the active layer is undercut during an etching process of selectively etching only a predetermined portion of the first clad layer, the active layer, and the second clad layer formed on the semiconductor substrate. After etching, a buried layer filling the undercut is formed in the same vacuum tube by using a mass transport phenomenon generated at a predetermined temperature or more, so that the interface of the active layer is not exposed to air for a long time in the growth process and prevents thermal damage of the interface. This prevents point defects and predecessors, and prevents leakage current.

Description

반도체 레이저의 제조방법Manufacturing method of semiconductor laser

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도(A)~(C)는 본발명에 따른 반도체 레이저의 제조공정도.2 (A) to (C) are manufacturing process diagrams of a semiconductor laser according to the present invention.

Claims (4)

제1도전형의 반도체 기판상에 제1도전형의 제1클레드층과 활성층 및 제2도전형의 제2클레드층을 순차적으로 숫자적으로 형성하는 공정과, 상기 제2클레드층상에 식각마스크를 형성하는 공정과, 상기 식각 마스크에 의해 노출되어 있는 제2클레드층과 활성층 및 제1클레드층을 순차적으로 제거하여 상기 활성층이 언더컷이 지도록 형성하고 상기 제1클레드층은 소정의 두께가 남도록하는 공정과, 상기 활성층의 언더컷이 진 부분을 메꾸는 매립층을 질량수송 방법으로 형성하는 공정과, 상기 제1클레드층의 측벽과 매립층의 측벽에 접하는 제2도전형의 제1전류 차단층을 상기 식각되고 남은 제1클레드층 상에 형성하는 공정과, 상기 제2클레드층의 측벽과 접하는 제1도전형의 제2전류 차단층을 상기 제1전류 차단층 상에 형성하는 공정을 구비하는 반도체 레이저 제조방법.Sequentially forming a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type on a semiconductor substrate of a first conductivity type, on the second clad layer Forming an etch mask, and sequentially removing the second clad layer, the active layer, and the first clad layer exposed by the etching mask to form the active layer undercut, and the first clad layer Forming a buried layer that fills the undercut of the active layer by a mass transport method; and a second conductive type first contacting the sidewall of the first clad layer and the sidewall of the buried layer. Forming a current blocking layer on the etched and remaining first cladding layer, and forming a second current blocking layer of a first conductivity type on and in contact with the sidewall of the second cladding layer on the first current blocking layer. Semiconductor having process to do Laser method. 제1항에 있어서, 상기 제1도전형과 제2도전형이 서로 반대 도전형인 것을 특징으로 하는 반도체 레이저의 제조방법.The method of manufacturing a semiconductor laser according to claim 1, wherein the first conductive type and the second conductive type are opposite conductive types. 제1항에 있어서, 상기 반도체 기판이 InP 기판인 것을 특징으로하는 반도체 레이저의 제조방법.The method of manufacturing a semiconductor laser according to claim 1, wherein the semiconductor substrate is an InP substrate. 제1항에 있어서, 상기 활성층의 언더컷이 4차례의 선택 식각 방법으로 형성되는 것을 특징으로하는 반도체 레이저의 제조방법.The method of claim 1, wherein the undercut of the active layer is formed by four selective etching methods. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930020577A 1993-10-06 1993-10-06 A method for manufacture of semiconductor laser KR970004499B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930020577A KR970004499B1 (en) 1993-10-06 1993-10-06 A method for manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930020577A KR970004499B1 (en) 1993-10-06 1993-10-06 A method for manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
KR950012832A true KR950012832A (en) 1995-05-17
KR970004499B1 KR970004499B1 (en) 1997-03-28

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ID=19365285

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930020577A KR970004499B1 (en) 1993-10-06 1993-10-06 A method for manufacture of semiconductor laser

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KR (1) KR970004499B1 (en)

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KR970004499B1 (en) 1997-03-28

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