KR950011637A - Manufacturing method of hot-dip zinc alloyed steel sheet with excellent plating processability - Google Patents

Manufacturing method of hot-dip zinc alloyed steel sheet with excellent plating processability Download PDF

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Publication number
KR950011637A
KR950011637A KR1019930021352A KR930021352A KR950011637A KR 950011637 A KR950011637 A KR 950011637A KR 1019930021352 A KR1019930021352 A KR 1019930021352A KR 930021352 A KR930021352 A KR 930021352A KR 950011637 A KR950011637 A KR 950011637A
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KR
South Korea
Prior art keywords
hot
steel sheet
heat treatment
galvanized
plating layer
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Application number
KR1019930021352A
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Korean (ko)
Other versions
KR960003730B1 (en
Inventor
장세기
최영민
배대철
Original Assignee
조말수
포항종합제철 주식회사
백덕현
재단법인 산업과학기술연구소
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Priority to KR1019930021352A priority Critical patent/KR960003730B1/en
Publication of KR950011637A publication Critical patent/KR950011637A/en
Application granted granted Critical
Publication of KR960003730B1 publication Critical patent/KR960003730B1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/26After-treatment
    • C23C2/28Thermal after-treatment, e.g. treatment in oil bath
    • C23C2/29Cooling or quenching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/04Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
    • C23C2/06Zinc or cadmium or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/34Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
    • C23C2/36Elongated material
    • C23C2/40Plates; Strips

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Thermal Sciences (AREA)
  • Coating With Molten Metal (AREA)

Abstract

본 발명은 가전용 및 자동차용 강판등으로 사용되는 합금화 용융아연 도금강판의 제조방법에 관한 것으로써, 도금층내의 철의 함량이 8-12중량%인 합금와 아연도금강판의 제조에 있어서 도금욕내의 납의 첨가량및 합금화 열처리후의 냉각속도를 조절함으로써, 가공변형에 대한 도금층의 파우더링성을 향상시킬 수 있는 용융아연 합금화 도금강판의 제조방법을 제공하고자 하는데, 그 목적이 있다.The present invention relates to a method for producing an alloyed hot-dip galvanized steel sheet used in steel sheets for home appliances and automobiles, and the like in the production of alloys of 8-12% by weight of iron in the plating layer and the lead in the plating bath. It is an object of the present invention to provide a method for producing a hot-dip galvanized galvanized steel sheet which can improve the powdering property of a plating layer against work deformation by controlling the amount of addition and the cooling rate after the heat treatment of alloying.

본 발명은 아연도금층의 합금화 열처리에 의하여 도금층내의 철함유량이 중량비로 8-12% 범위인 용융아연 합금화 도금강판을 제조하는데 있어서 도금욕내의 납의 합유량이 중량비로 0.15% 이하가 되고 합금화 열처리후 도금강판을 초당 18℃ 이상으로 냉각하여 도금층 가공성이 우수한 용융아연 합금화 도금강판을 제조하는 방법을 그 요지로한다.In the present invention, in the manufacture of hot-dip galvanized galvanized steel sheet in which the iron content in the plating layer is in the range of 8-12% by weight by alloying heat treatment of the galvanized layer, the alloying amount of lead in the plating bath is 0.15% or less by weight ratio, and the coated steel sheet after alloy heat treatment. The method of manufacturing the hot-dip galvanized galvanized steel plate excellent in plating layer workability by cooling to more than 18 degreeC per second is made into the summary.

Description

도금층 가공성이 우수한 용융아연 합금화 도금강판의 제조방법Manufacturing method of hot-dip zinc alloyed steel sheet with excellent plating processability

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (1)

알루미늄 및 납을 함유하는 용융아연 도금욕에서 용융아연 도금한 후 아연도금층의 합금화 열처리에 의해 도금층내의 철함유량이 8.0-12.0중량%인 용융아연 합금화 도금강판을 제조하는 방법에 있어서, 상기 도금욕내의 납(Pb)의 함유량이 0.15중량% 이하가 되도록 하고; 그리고 합금화 열처리후의 도금강판을 초당 18℃ 이상으로 냉각하는 것을 특징으로 하는 도금층 가공성이 우수한 용융아연 합금화 도금강판의 제조방법.A method of producing a hot-dip galvanized alloy steel sheet having an iron content of 8.0-12.0% by weight after galvanizing in a hot-dip galvanizing bath containing aluminum and lead, followed by alloying heat treatment of the galvanized layer. The content of lead (Pb) is 0.15% by weight or less; And cooling the plated steel sheet after the alloying heat treatment to 18 ° C. or more per second. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021352A 1993-10-14 1993-10-14 Method for making a galvanized steel sheet with an excellent coating function KR960003730B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930021352A KR960003730B1 (en) 1993-10-14 1993-10-14 Method for making a galvanized steel sheet with an excellent coating function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930021352A KR960003730B1 (en) 1993-10-14 1993-10-14 Method for making a galvanized steel sheet with an excellent coating function

Publications (2)

Publication Number Publication Date
KR950011637A true KR950011637A (en) 1995-05-15
KR960003730B1 KR960003730B1 (en) 1996-03-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120103B2 (en) 2008-10-17 2012-02-21 Hynix Semiconductor Inc. Semiconductor device with vertical gate and method for fabricating the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101561008B1 (en) * 2014-12-19 2015-10-16 주식회사 포스코 Hot dip galvanized and galvannealed steel sheet having higher hole expansion ratio, and method for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120103B2 (en) 2008-10-17 2012-02-21 Hynix Semiconductor Inc. Semiconductor device with vertical gate and method for fabricating the same

Also Published As

Publication number Publication date
KR960003730B1 (en) 1996-03-21

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