KR950004610A - Variable Morse Capacitor - Google Patents

Variable Morse Capacitor Download PDF

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Publication number
KR950004610A
KR950004610A KR1019930013939A KR930013939A KR950004610A KR 950004610 A KR950004610 A KR 950004610A KR 1019930013939 A KR1019930013939 A KR 1019930013939A KR 930013939 A KR930013939 A KR 930013939A KR 950004610 A KR950004610 A KR 950004610A
Authority
KR
South Korea
Prior art keywords
capacitor
capacitors
variable
basic
expansion
Prior art date
Application number
KR1019930013939A
Other languages
Korean (ko)
Other versions
KR960015327B1 (en
Inventor
김성수
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019930013939A priority Critical patent/KR960015327B1/en
Publication of KR950004610A publication Critical patent/KR950004610A/en
Application granted granted Critical
Publication of KR960015327B1 publication Critical patent/KR960015327B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 마스크옵션을 사용하지 않고 모스 캐패시터의 용량을 가변시키는 기술에 관한 것으로, 이를 위해 기본 캐패시터(12A)의 양측에 확장용 캐패시터(12B),(12C)를 형성함과 아울러, 그 캐패시터(12A,12B),(12A,12C)의 사이에 엔모스(13A),(13B)를 형성하고, 외부에서 공급되는 게이트신호를 이용하여 그 엔모스(13A),(13B)의 온,오프를 제어하여 그 엔모스(13A),(13B)가 온될때, 기본 캐패시터(12A)에 확장용 캐패시터(12B),(12C)가 병렬접속되게 한 것이다.The present invention relates to a technique for varying the capacitance of a MOS capacitor without using a mask option. To this end, expansion capacitors 12B and 12C are formed on both sides of the basic capacitor 12A, and the capacitor ( The NMOSs 13A and 13B are formed between 12A, 12B and 12A and 12C, and the NMOS 13A and 13B are turned on and off using a gate signal supplied from the outside. When the NMOS 13A, 13B is turned on by the control, the expansion capacitors 12B, 12C are connected in parallel with the basic capacitor 12A.

Description

가변형 모스 캐패시터Variable Morse Capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명 모스 캐패시터의 단면도.2 is a cross-sectional view of the MOS capacitor of the present invention.

Claims (1)

P형 기판(11)의 중앙부에 n+확산층(12A1), 절연막(12A2), 폴리실리콘 게이트(12A3)를 순차적으로 형성하여기본 캐패시터(12A)를 형성함과 아울러, 상기 기본 캐패시터(12A)의 양측에 그 기본 캐패시터(12A)와 같은 구조의 확장용캐패시터(12B), (12C)를 형성하고, 상기 기본 캐패시터(12A)와 확장용 캐패시터(12B), (12C)의 사이에 외부의 제어신호에의해 온 될 때 n+확산층(12A1, 12B1), (12A1, 12C1)을 각기 연결시켜 주는 엔모스(13A), (13B)를 각각 형성하며, 상기캐패시터(12A), (12B), (12C)의 폴리실리콘 게이트(12A3), (12B3), (12C3)를 캐패시터의 타측단자(B)에 공통으로 콘택하고, 캐패시터(12A), (12B), (12C)의 n+확산층(12A1)을 엔모스(14)를 통해 캐패시터의 일측단자(A)에 접속하여 구성한 것을 특징으로 하는 가변형 모스 캐패시터.The n + diffusion layer 12A1, the insulating film 12A2, and the polysilicon gate 12A3 are sequentially formed in the central portion of the P-type substrate 11 to form the base capacitor 12A, and the base capacitor 12A Expansion capacitors 12B and 12C having the same structure as the basic capacitor 12A are formed on both sides, and an external control signal between the basic capacitor 12A and the expansion capacitors 12B and 12C. N + diffusion layers 12A1, 12B1, and 12A1, 12C1, respectively, when they are turned on, form NMOSs 13A, 13B, respectively, and the capacitors 12A, 12B, 12C. Polysilicon gates (12A3), (12B3), and (12C3) of () are commonly contacted to the other terminal (B) of the capacitor, and the n + diffusion layers (12A1) of the capacitors (12A), (12B), and (12C). A variable MOS capacitor, characterized in that configured by connecting to one terminal (A) of the capacitor through the NMOS (14). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930013939A 1993-07-22 1993-07-22 Mos capacitor KR960015327B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930013939A KR960015327B1 (en) 1993-07-22 1993-07-22 Mos capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930013939A KR960015327B1 (en) 1993-07-22 1993-07-22 Mos capacitor

Publications (2)

Publication Number Publication Date
KR950004610A true KR950004610A (en) 1995-02-18
KR960015327B1 KR960015327B1 (en) 1996-11-07

Family

ID=19359827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930013939A KR960015327B1 (en) 1993-07-22 1993-07-22 Mos capacitor

Country Status (1)

Country Link
KR (1) KR960015327B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100293069B1 (en) * 1998-01-12 2001-06-15 가네꼬 히사시 Exhausting device of fluorescent display tube
KR100450824B1 (en) * 2002-11-06 2004-10-01 삼성전자주식회사 Structure of radio frequency variable capacitor and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100293069B1 (en) * 1998-01-12 2001-06-15 가네꼬 히사시 Exhausting device of fluorescent display tube
KR100450824B1 (en) * 2002-11-06 2004-10-01 삼성전자주식회사 Structure of radio frequency variable capacitor and method of manufacturing the same

Also Published As

Publication number Publication date
KR960015327B1 (en) 1996-11-07

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