KR940027098A - How to remove photoresist - Google Patents
How to remove photoresist Download PDFInfo
- Publication number
- KR940027098A KR940027098A KR1019930009726A KR930009726A KR940027098A KR 940027098 A KR940027098 A KR 940027098A KR 1019930009726 A KR1019930009726 A KR 1019930009726A KR 930009726 A KR930009726 A KR 930009726A KR 940027098 A KR940027098 A KR 940027098A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- corrosion
- etching
- photoresist film
- plasma
- Prior art date
Links
Abstract
본 발명은 감광막 제거 방법에 관한 것으로, 금속 식각후 금속 표면 및 감광막에 흡착되어 있는 염소이온에 의한 금속의 부식을 방지하기 위하여 O2플라즈마 분위기에서 1단계 감광막 제거 공정을 진행한 다음, CF4/H2플라즈마를 이용한 2단계 공정을 진행하는 것을 특징으로 함으로써, 금속 표면에 흡착된 염소이온을 불소이온으로 치환하거나 염화수소 형태의 반응생성물질로 제거해줌으로써 금속의 부식을 방지할 수 있고 또한 공기중에 장시간 노출되어도 금속 부식현상이 일어나지 않기 때문에 금속 식각 공정의 신뢰성이 향상되고, 습식공정의 후처리 공정을 습식싱크에서 독립적으로 진행시켜도 금속부식의 우려가 없기 때문에 금속 식각 장비내에서 일괄 처리하는 방법에 비해 금속 식각 장비의 보수 및 유지가 용이하고 처리율을 향상시킬 수 있다.The present invention relates to a method for removing a photoresist film, and in order to prevent corrosion of the metal by chlorine ions adsorbed on the metal surface and the photoresist film after etching the metal, a one-step photoresist removal process is performed in an O 2 plasma atmosphere, and then CF 4 / By performing a two-step process using H 2 plasma, by removing chlorine ions adsorbed on the metal surface with fluorine ions or by removing the reaction product in the form of hydrogen chloride, corrosion of the metal can be prevented, Metal corrosion does not occur even when exposed, which improves the reliability of the metal etching process, and there is no risk of metal corrosion even if the post-treatment process of the wet process is independently performed in the wet sink. Easy to repair and maintain metal etching equipment and improve throughput have.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 금속 식각후 웨이퍼 상태 단면도, 제2도는 본 발명에 따른 1단계 감광막 제거 공정후의 기판상태 단면도, 제3도는 본 발명에 따른 2단계 감광막 제거 공정후의 기판 상태 단면도.1 is a cross-sectional view of a wafer state after metal etching, FIG. 2 is a cross-sectional view of a substrate state after a one-step photoresist film removal process according to the present invention, and FIG.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930009726A KR940027098A (en) | 1993-05-31 | 1993-05-31 | How to remove photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930009726A KR940027098A (en) | 1993-05-31 | 1993-05-31 | How to remove photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR940027098A true KR940027098A (en) | 1994-12-10 |
Family
ID=67134472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930009726A KR940027098A (en) | 1993-05-31 | 1993-05-31 | How to remove photoresist |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940027098A (en) |
-
1993
- 1993-05-31 KR KR1019930009726A patent/KR940027098A/en not_active Application Discontinuation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW356570B (en) | Semiconductor device fabrication method and its treating liquid for the same | |
| KR950021173A (en) | How to Clean the Etching Chamber of Dry Etching Equipment | |
| KR940016553A (en) | Etching Treatment Method and Etching Post Treatment Method and Etching Equipment | |
| KR950015621A (en) | Processing method of silicon-based material layer | |
| KR940027098A (en) | How to remove photoresist | |
| TW374203B (en) | A method for forming a fine contact hole in a semiconductor device | |
| US7067433B2 (en) | Method to reduce the fluorine contamination on the Al/Al-Cu pad by a post high cathod temperature plasma treatment | |
| US6423646B1 (en) | Method for removing etch-induced polymer film and damaged silicon layer from a silicon surface | |
| KR19980044194A (en) | Metal wiring formation method of semiconductor device | |
| KR960026316A (en) | Cleaning Method of Semiconductor Substrate | |
| KR100414950B1 (en) | Method for forming copper interconnection of semiconductor device | |
| KR930003340A (en) | Metal wiring method of semiconductor device using plating method | |
| KR100364809B1 (en) | Method for etching/ashing metal of semiconductor device | |
| KR100237020B1 (en) | Method of forming metal layer in semiconductor device | |
| KR950025875A (en) | Method for manufacturing metal contact vias in semiconductor devices | |
| KR940027074A (en) | Contact Hole Formation Method of Semiconductor Device by Inclined Etching | |
| KR940020171A (en) | Metal etching method of semiconductor device | |
| KR20020068621A (en) | Method for manufacturing interconnection of semiconductor device | |
| KR980005550A (en) | Method of forming a contact hole in a semiconductor device | |
| KR100368985B1 (en) | Method for patterning metal film in fabrication process of semiconductor device | |
| KR970001696B1 (en) | Process for elimination of polymer during dry etching of oxidation film | |
| KR970077213A (en) | Contact etching method of semiconductor device | |
| KR950006990A (en) | Metal film corrosion prevention method of semiconductor device | |
| KR950009923A (en) | Method for manufacturing storage electrode of semiconductor device | |
| KR20030095098A (en) | Method for manufacturing metal line of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |