KR970077213A - Contact etching method of semiconductor device - Google Patents

Contact etching method of semiconductor device Download PDF

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Publication number
KR970077213A
KR970077213A KR1019960017501A KR19960017501A KR970077213A KR 970077213 A KR970077213 A KR 970077213A KR 1019960017501 A KR1019960017501 A KR 1019960017501A KR 19960017501 A KR19960017501 A KR 19960017501A KR 970077213 A KR970077213 A KR 970077213A
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KR
South Korea
Prior art keywords
gas
fluorine
etching
cxhy
based gas
Prior art date
Application number
KR1019960017501A
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Korean (ko)
Inventor
남기원
임태정
이영철
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960017501A priority Critical patent/KR970077213A/en
Publication of KR970077213A publication Critical patent/KR970077213A/en

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  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 기판상의 층간 절연막을 플로린계 가스로 선택식각하여 소정부위의 반도체 기판을 노출시키는 콘택 식각 방법에 있어서, 상기 플로린계 가스를 사용한 층간 절연막의 식각시 CxHy계 가스를 더 부가하여 상기 플로린계 가스와 상기 CxHy 가스의 반응가스인 HF에 의해 폴리머를 제거하는 것을 특징으로 하는 반도체 소자의 콘택식각 방법에 관한 것으로, 금속막과 하부막과의 전기적 연결을 위한 콘택 형성을 위한 식각 공정시 식각가스로 사용되는 플로린계(Flourine) 가스에 CxHy계 가스를 첨가하여 식각공정을 진행하게 되면, 플로린계(Flourine)계 가스의 불소이온과 CxHy계 가스 수소이온의 결합에 의해 형성된 불산에 의해 폴리머등의 파티클을 제거함으로써 별도의 세정공정을 거치는 등의 번거로움을 피할 수 있다.The present invention relates to a contact etching method for selectively etching an interlayer insulating film on a semiconductor substrate with a fluorine gas to expose a semiconductor substrate in a predetermined region, wherein a CxHy gas is further added during the etching of the interlayer insulating film using the fluorine gas, And the polymer is removed by HF which is a reaction gas of the system gas and the CxHy gas. The present invention relates to a method of etching a contact of a semiconductor device, which comprises etching an etching process for forming a contact for electrical connection between a metal film and a lower film, When a CxHy-based gas is added to a flourine gas used as a gas to conduct the etching process, fluorine ions formed by the combination of fluorine ions of a fluorine-based gas and hydrogen ions of a CxHy-based gas are converted into fluorine It is possible to avoid troubles such as a separate cleaning process being performed by removing the particles of the particles.

Description

반도체 소자의 콘택 식각 방법Contact etching method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

Claims (4)

반도체 기판상의 층간 절연막을 플로린계 가스로 선택식각하여 소정부위의 반도체 기판을 노출시키는 콘택 식각 방법에 있어서, 상기 플로린계 가스를 사용한 층간 절연막의 식각시 CxHy계 가스를 더 부가하여 상기 플로린계 가스와 상기 CxHy계 가스의 반응가스인 HF에 의해 폴리머를 제거하는 것을 특징으로 하는 반도체소자의 콘택 식각 방법.A contact etching method for selectively etching an interlayer insulating film on a semiconductor substrate with a fluorine-based gas to expose a predetermined region of a semiconductor substrate, the method comprising: a step of adding a CxHy-based gas to etch the interlayer insulating film using the fluorine- Wherein the polymer is removed by HF which is a reaction gas of the CxHy-based gas. 제1항에 있어서, 상기 플로린계 가스는 CF4, CHF3또는 C2F6중 어느 하나인 것을 특징으로 하는 반도체소자의 콘택 식각 방법.The method of claim 1, wherein the fluorine-based gas is any one of CF 4 , CHF 3, and C 2 F 6 . 제1항에 있어서, 상기 CxHy계 가스는 C2H2또는 C2H4가스인 것을 특징으로 하는 반도체 소자의 콘택식각 방법.The method of claim 1, wherein the CxHy-based gas is C 2 H 2 or C 2 H 4 gas. 제3항에 있어서, 상기 CxHy계 가스량은 5sccm 내지 20sccm인 것을 특징으로 하는 반도체 소자의 콘택식각 방법.4. The method of claim 3, wherein the amount of the CxHy-based gas is 5 sccm to 20 sccm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017501A 1996-05-22 1996-05-22 Contact etching method of semiconductor device KR970077213A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017501A KR970077213A (en) 1996-05-22 1996-05-22 Contact etching method of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019960017501A KR970077213A (en) 1996-05-22 1996-05-22 Contact etching method of semiconductor device

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KR970077213A true KR970077213A (en) 1997-12-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438405B1 (en) * 2002-06-18 2004-07-02 동부전자 주식회사 Method for forming protector film of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438405B1 (en) * 2002-06-18 2004-07-02 동부전자 주식회사 Method for forming protector film of semiconductor device

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