KR970077245A - Method for etching a metal film of a semiconductor device - Google Patents

Method for etching a metal film of a semiconductor device Download PDF

Info

Publication number
KR970077245A
KR970077245A KR1019960017500A KR19960017500A KR970077245A KR 970077245 A KR970077245 A KR 970077245A KR 1019960017500 A KR1019960017500 A KR 1019960017500A KR 19960017500 A KR19960017500 A KR 19960017500A KR 970077245 A KR970077245 A KR 970077245A
Authority
KR
South Korea
Prior art keywords
metal film
etching
gas
semiconductor device
residue
Prior art date
Application number
KR1019960017500A
Other languages
Korean (ko)
Inventor
남기원
임태정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960017500A priority Critical patent/KR970077245A/en
Publication of KR970077245A publication Critical patent/KR970077245A/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 장치의 금속막 식각방법에 관한 것으로, 염소가스에 의한 금속배선 형성을 위한 식각 공정후, 웨이퍼 전역에 걸쳐 금속막을 부식시키는 클로린계 잔류물의 플로린계로의 치환을 위한 CF4 가스 처리공정을 CxHy 계열 가스를 첨가하여 진행함으로써, 염소가스 제거 효과가 탁월한 불산을 형성하고, 이 불산에 의해 소정두께의 산화막이 식각되면서 플로린계 잔류물과 미처 치환되지 못한 클로린계 잔류물이 완전히 제거되어 염소가스에 의한 금속막의 부식을 효과적으로 방지할 수 있는 효과가 있다.The present invention relates to a method of etching a metal film of a semiconductor device, which comprises a CF4 gas processing step for replacing a chlorine residue with a fluorine residue which corrodes a metal film throughout the wafer, after an etching process for forming a metal wiring by chlorine gas The fluorine-based residue is completely removed from the fluorine residue and the chlorine-based residue is completely removed as the oxide film having a predetermined thickness is etched by the hydrofluoric acid to remove chlorine gas It is possible to effectively prevent the corrosion of the metal film by the metal film.

Description

반도체 장치의 금속막 식각방법Method for etching a metal film of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

Claims (5)

반도체 장치의 금속막 식각방법에 있어서, 클로린계 가스로 금속막을 선택식각하는 제1단계; CF4가스에 소정량의 CxHy계열 가스를 첨가하여 그로 인해 발생된 HF로 클로린계 잔류물을 제거하는 제2단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 장치의 금속막 식각방법.A method of etching a metal film of a semiconductor device, comprising: a first step of selectively etching a metal film with a chlorine-based gas; Etching the metal film of the semiconductor device comprising the step of removing the chlorine-based residues in the HF generated by it by adding CxHy series gas of the predetermined amount of the CF 4 gas. 제1항에 있어서, 상기 제1단계후 과산화수소 용액에서 세정을 실시하고 상기 제2단계를 실시하는 것을 특징으로 하는 반도체 장치의 금속막 식각방법.The method according to claim 1, wherein cleaning is performed in a hydrogen peroxide solution after the first step, and the second step is performed. 제1항에 있어서, 상기 CxHy 계열 가스는 C2H2, C2H4또는 C2H6중 어느 하나인 것을 특징으로 하는 반도체 장치의 금속막 식각방법.The method according to claim 1, wherein the CxHy-based gas is any one of C 2 H 2 , C 2 H 4, and C 2 H 6 . 제1항에 있어서, 상기 CxHy 계열 가스는 CF4가스의 10% 내지 20%정도가 첨가하는 것을 특징으로 하는 반도체 장치의 금속배선 형성방법.The method of claim 1, wherein the CxHy-based gas is added in an amount of about 10% to about 20% of the CF 4 gas. 제1항에 있어서, 상기 층간 절연막은 산화막인 것을 특징으로 하는 반도체 장치의 금속배선 형성방법.The method according to claim 1, wherein the interlayer insulating film is an oxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017500A 1996-05-22 1996-05-22 Method for etching a metal film of a semiconductor device KR970077245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017500A KR970077245A (en) 1996-05-22 1996-05-22 Method for etching a metal film of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017500A KR970077245A (en) 1996-05-22 1996-05-22 Method for etching a metal film of a semiconductor device

Publications (1)

Publication Number Publication Date
KR970077245A true KR970077245A (en) 1997-12-12

Family

ID=66219806

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017500A KR970077245A (en) 1996-05-22 1996-05-22 Method for etching a metal film of a semiconductor device

Country Status (1)

Country Link
KR (1) KR970077245A (en)

Similar Documents

Publication Publication Date Title
EP0788143B1 (en) Method of producing semiconductor device and use of a rinse for cleaning semiconductor device
US7067466B2 (en) Cleaning composition useful in semiconductor integrated circuit fabrication
KR19990045590A (en) How to remove photoresist and etch residue
KR950021173A (en) How to Clean the Etching Chamber of Dry Etching Equipment
KR19980070591A (en) Heat cleaning method using nitrogen trifluoride-oxygen
US6384001B2 (en) Dilute cleaning composition
JP2008218867A (en) Semiconductor device manufacturing method
KR970077245A (en) Method for etching a metal film of a semiconductor device
JPH1174180A (en) Manufacture of semiconductor device
KR100510440B1 (en) Cleaning solution and method for cleaning semiconductor device using the same
US7067433B2 (en) Method to reduce the fluorine contamination on the Al/Al-Cu pad by a post high cathod temperature plasma treatment
KR20010063483A (en) Method of eching an aluminium metal film
JP2007086689A (en) Liquid for removing photoresist residue and polymer residue
JP2000122309A (en) Resist removing and washing method for semiconductor substrate
KR960026316A (en) Cleaning Method of Semiconductor Substrate
KR970077213A (en) Contact etching method of semiconductor device
KR970052634A (en) How to remove etch residue
KR950030253A (en) Metal etching method
KR940005626B1 (en) Method of making pattern of polysilicone
KR970077240A (en) Dry Etching Method Using Plasma
KR19980060585A (en) Metal wiring formation method
KR20040025163A (en) Method for preventing metal-corrosion in the metal-etch process
KR20000044876A (en) Method for forming metal wiring of semiconductor device
KR980005550A (en) Method of forming a contact hole in a semiconductor device
KR940027098A (en) How to remove photoresist

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination