KR970077245A - Method for etching a metal film of a semiconductor device - Google Patents
Method for etching a metal film of a semiconductor device Download PDFInfo
- Publication number
- KR970077245A KR970077245A KR1019960017500A KR19960017500A KR970077245A KR 970077245 A KR970077245 A KR 970077245A KR 1019960017500 A KR1019960017500 A KR 1019960017500A KR 19960017500 A KR19960017500 A KR 19960017500A KR 970077245 A KR970077245 A KR 970077245A
- Authority
- KR
- South Korea
- Prior art keywords
- metal film
- etching
- gas
- semiconductor device
- residue
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 장치의 금속막 식각방법에 관한 것으로, 염소가스에 의한 금속배선 형성을 위한 식각 공정후, 웨이퍼 전역에 걸쳐 금속막을 부식시키는 클로린계 잔류물의 플로린계로의 치환을 위한 CF4 가스 처리공정을 CxHy 계열 가스를 첨가하여 진행함으로써, 염소가스 제거 효과가 탁월한 불산을 형성하고, 이 불산에 의해 소정두께의 산화막이 식각되면서 플로린계 잔류물과 미처 치환되지 못한 클로린계 잔류물이 완전히 제거되어 염소가스에 의한 금속막의 부식을 효과적으로 방지할 수 있는 효과가 있다.The present invention relates to a method of etching a metal film of a semiconductor device, which comprises a CF4 gas processing step for replacing a chlorine residue with a fluorine residue which corrodes a metal film throughout the wafer, after an etching process for forming a metal wiring by chlorine gas The fluorine-based residue is completely removed from the fluorine residue and the chlorine-based residue is completely removed as the oxide film having a predetermined thickness is etched by the hydrofluoric acid to remove chlorine gas It is possible to effectively prevent the corrosion of the metal film by the metal film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017500A KR970077245A (en) | 1996-05-22 | 1996-05-22 | Method for etching a metal film of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017500A KR970077245A (en) | 1996-05-22 | 1996-05-22 | Method for etching a metal film of a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077245A true KR970077245A (en) | 1997-12-12 |
Family
ID=66219806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960017500A KR970077245A (en) | 1996-05-22 | 1996-05-22 | Method for etching a metal film of a semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970077245A (en) |
-
1996
- 1996-05-22 KR KR1019960017500A patent/KR970077245A/en not_active Application Discontinuation
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Legal Events
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WITN | Withdrawal due to no request for examination |