KR940020581A

KR940020581A - Bipolar Device Manufacturing Method

Info

Publication number: KR940020581A
Application number: KR1019930001579A
Authority: KR
Inventors: 이창헌
Original assignee: 문정환; 금성일렉트론 주식회사
Priority date: 1993-02-05
Filing date: 1993-02-05
Publication date: 1994-09-16

Abstract

본 발명은 바이폴라 소자 제조 방법에 관한 것으로서 특히 질화막(Si₃N₄)필름을 이용하여 단위소자 특성변화를 최소화하여 고신뢰도의 바이폴라 소자의 캐피시터 제조에 적당하도록 한 바이폴라 소자 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bipolar device manufacturing method, and more particularly, to a method of manufacturing a bipolar device suitable for manufacturing a capacitor of a high reliability bipolar device using a nitride film (Si ₃ N ₄ ) film by minimizing changes in unit device characteristics.

이를 위하여 반도체 기판(1)에 매입층(2)과 에피층(3) 및 필드 격리막(4)이 형성된 바이폴라 소자 제조방법에 있어서, 상기 에피층(3)위에 에미터 이온(5)주입을 실시한 다음 전면에 절연막(6)을 형성하는 단계와, 상기 단계 후 캐피시터가 형성될 영역을 정의 한 다음 상기 캐패시터 영역에 존재하는 절연막(6)을 디파인(Define)하고 전면에 질화막 필름(7)을 도포하는 단계와, 상기 캐패시터 영역 이외의 부분에 존재하는 질화막 필름(7)을 포토 에치하여 제거 하는 단계와, 상기 단계 후 2단 확산시켜 에미터 접합부(8)를 형성시키는 단계와, 상기 절연막(6)의 소정 부분만을 포토 에치하여 콘택을 형성하고, 전면에 금속(9)을 증착하는 단계와, 상기 금속(9)을 포토 에치하여 필요한 부분의 금속(9)만을 잔여 시키는 단계를 포함하여서 된 것이다.To this end, in the bipolar device manufacturing method in which the buried layer 2, the epi layer 3, and the field isolation layer 4 are formed on the semiconductor substrate 1, the emitter ion 5 is injected onto the epi layer 3; Next, a step of forming an insulating film 6 on the front surface and a region where a capacitor is to be formed after the step are defined, and then the insulating film 6 existing in the capacitor area is defined and the nitride film 7 is coated on the front surface. And photoetching and removing the nitride film 7 present in the portion other than the capacitor region, and diffusing two stages to form the emitter junction 8 after the step; Photo-etching only a predetermined portion of the photovoltaic layer to form a contact, depositing a metal (9) on the front surface, and leaving only the metal (9) of the required portion by photo-etching the metal (9). .

Description

Bipolar Device Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 바이폴라 소자의 제조 공정도.2 is a manufacturing process diagram of a bipolar device according to the present invention.

Claims

In the bipolar device manufacturing method in which the buried layer 2, the epi layer 3, and the field isolation film 4 are formed in the semiconductor substrate 1, ion implantation ions 5 are implanted on the epi layer 3; Forming an insulating film 6 on the front surface, defining a region where the capacitor is to be formed after the step, removing the insulating film 6 existing in the capacitor region, and applying a nitride film 7 on the front surface; And photoetching and removing the nitride film 7 present in a portion other than the capacitor region, and spreading it in two stages to form the emitter junction 8 after the step; Forming a contact by photoetching only a portion, depositing a metal (9) on the entire surface, and leaving only the metal (9) of the required portion by photoetching the metal (9). .

※ Note: The disclosure is based on the initial application.