KR940016602A

KR940016602A - Polycrystalline Crystallization of Amorphous Silicon

Info

Publication number: KR940016602A
Application number: KR1019920024132A
Authority: KR
Inventors: 김원근; 손정하; 한정인; 김철수
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1992-12-14
Filing date: 1992-12-14
Publication date: 1994-07-23

Abstract

본 발명은 반도체장치의 제조방법에 관한 것으로, 특히 인시츄어닐방식으로 비정질실리콘을 폴리실리콘화하는 방법으로 액정표시장치의 폴리실리콘 박막트랜지스터를 형성하기 위하여 비정질실리콘을 폴리실리콘으로 변형시키는 반도체장치의 제조방법에 있어서, 멀티챔버형 로드록시스템내의 동일한 진동상태에서 소정의 기판위에 비정실리콘을 증착하는 공정과 어닐공정이 차례로 인시튜방식으로 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing polysilicon thin film transistors in an insituilil method to form polysilicon thin film transistors of a liquid crystal display device. In the manufacturing method, a process of depositing amorphous silicon on a predetermined substrate in the same vibration state in a multi-chamber-type load lock system, and an annealing process are sequentially performed in situ.

따라서 상기한 본 발명에 의하여 진공을 깨트리지 않는 동일한 로드록 챔버내에서 비정질실리콘의 증착공정과 어닐공정을 차례로 수행함으로써 비정질실리콘의 표면에 자연산화막이 성장되지 않게하여 입자의 크기가 균일하고 만족할만한 폴리실리콘을 형성시킬 수 있어, 폴리실리콘에서의 전하이동도가 향상되어 박막트랜지스터의 동작속도가 빨라지게 되며, 동작속도가 빠른 박막트랜지스터는 액정표시패널의 행과 열방향의 드라이버단, 또는 콘트롤러에 사용될 수가 있어서 액정표시패널의 폴리실리콘 박막트랜지스터를 동일 마스크 상에 설계할 수 있으므로 제조방법이 간단하고 제조비용이 저렴해지는 잇점이 있다.Therefore, according to the present invention, the deposition process of amorphous silicon and the annealing process are sequentially performed in the same load lock chamber that does not break the vacuum so that the natural oxide film is not grown on the surface of the amorphous silicon, so that the particle size is uniform and satisfactory. Since polysilicon can be formed, the charge mobility in polysilicon is improved, and the operation speed of the thin film transistor is increased, and the thin film transistor with high operation speed is applied to the driver stage or the controller in the row and column directions of the liquid crystal display panel. Since the polysilicon thin film transistor of the liquid crystal display panel can be designed on the same mask, the manufacturing method is simple and the manufacturing cost is low.

Description

Polycrystalline Crystallization of Amorphous Silicon

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도에 본 발명의 방법에 의해 비정질실리콘을 다결정화하기 위한 멀티 챔버형 로드록시스템을 나타내고 있다.2 shows a multi-chambered load lock system for polycrystallizing amorphous silicon by the method of the present invention.

Claims

A method of manufacturing a semiconductor device that transforms amorphous silicon into polysilicon to form a polysilicon thin film transistor of a liquid crystal display device, comprising the steps of: depositing amorphous silicon on a predetermined substrate under the same vacuum in a multichamber load lock system; A method of manufacturing a semiconductor device, characterized in that the annealing step is performed in-situ in turn.

The multichamber-type load lock system for manufacturing a semiconductor device according to claim 1, wherein the multi-chamber load lock system for manufacturing a semiconductor device has a space for a chamber for thin film deposition, an anneal chamber, and an expansion chamber to be used for a process requiring continuous thin film deposition through the load lock chamber. And clustering and sequentially performing deposition and annealing processes in the same vacuum system using a standardized wafer transport robot in a chamber.

The method of claim 1, wherein the amorphous silicon is formed by selectively using any one of low pressure chemical vapor deposition or sputtering.

The method of claim 1, wherein the annealing process is performed by selectively using any one of a heat treatment and a laser method.

※ Note: The disclosure is based on the initial application.