KR940010645B1 - Radial typed junction pattern - Google Patents

Abstract

The matching pattern for testing the mis-alignment of the photo process in the semiconductor manufacturing process includes a first radial pattern at which the rectangular patterns are arranged at the same angles around the center point, and a second pattern whose shape is like the first one. The second pattern is narrower than the first one to be contained into the first one.

Description

Radial Matching Pattern

1 is a conventional matching pattern formation diagram.

2 is an operation explanatory diagram.

3 is a schematic diagram of inspection.

4 is a radial matching pattern forming diagram of the present invention.

5 is a comparative view of use.

The present invention relates to a misalignment check during a photo process, and more particularly, to a new inspection pattern for improving yield through preventing shot rotation and preventing accidents in a photo process and producing high quality devices.

1, 2, and 3 are diagrams for explaining a misalignment check method using a conventional matching pattern in a rectangular shape.

Conventionally, a rectangular matching pattern is used to check misalignment during the photo process of several steps. As shown in FIG. 1, a rectangular pattern having a predetermined size is first formed in a specific step, and then, in the next step, A smaller square pattern was first formed in the center of the square pattern first to form a matching pattern for inspection, and the misalignment was examined by checking the correspondence of the two square patterns.

That is, as shown in Fig. 2, the matching pattern formed on the scribe line was measured (or neck side) by measuring aa, a'-a ', bb, and b'-b' spacing and measured crosswise from the bottom of the wafer to the top, left to right. By checking the error, abnormality of alignment was confirmed.

The alignment pattern formed by the exposure process for each chip formed on the wafer had to be checked for abnormality by thermal cross inspection as shown in FIG.

In the prior art, it is difficult to determine the accuracy of the matching pattern when measuring the measurement pattern, which was time consuming by measuring with a specific device. That is, a lot of time is wasted when the shot rotation or misalignment is measured. As a result, devices in the mass production system have a rectangular matching pattern, but only a few wafers are inspected or no inspection is performed in time. Thus, even when an error occurs during the photo process, the production of low yield and low performance devices is often performed.

The present invention is to solve this problem, it is possible to perform a full inspection without a sample inspection without the troublesome, as in the existing correct answer pattern, to prevent misalignment, and thus a matching pattern that can mass-produce high yield and high quality devices Is to provide.

The radial matching pattern of the present invention is an inspection pattern for checking misalignment of a photo process in a semiconductor manufacturing process. The radial matching pattern of the present invention resembles a first radial pattern in which a long rectangular bar pattern is conformally arranged at a center point and a first radial pattern. And a second radial pattern having an area that can fit within each bar pattern of the first radial pattern. Preferably, the first and second radial patterns are eight-directional radial patterns.

In the method of forming the pattern of the present invention, as shown in Fig. 4, a radial pattern in which a long rectangle is equiangularly arranged from the center into eight directions with a matching pattern (FG pattern) in a specific step is broadly formed, and the matching pattern (CONT in the next step) is formed. The radial pattern of the same shape is narrowly formed to form a radial matching pattern.

The shape of the radial matching pattern of the present invention is preferably 8 squares, but 6 squares or 10 squares may also be used.

The pattern formed in Figure 4 can be seen at a glance whether or not the rotation of the exposure state even under the microscope. In other words, the inspection is simple and accurate, and a large amount of wafers can be inspected during the process.

FIG. 5 illustrates the misalignment state compared with the conventional rectangular matching pattern, and shows that the radial matching pattern of the present invention can easily determine the misalignment state. For example, as shown in FIG. 5, if a rotation error of a shot occurs, the pattern of the present invention can be easily identified, but it is very difficult with the conventional pattern.

Using the radial matching pattern of the present invention, the conventional method is difficult to visually distinguish the square, but this method can easily obtain the degree of rotation as well as the visual effect. In addition, as in the matching pattern, it is possible to perform a full inspection without a complicated test and a sample inspection, thereby preventing misalignment, thereby increasing yield and producing a large quantity of high quality devices.

The higher the density, the greater the importance of the photo process, so that patterns can be formed on the scribe line of all existing devices, as well as 16 mega DRAM and next-generation devices, to ensure high yield devices through stabilization of the photo process.

Claims (2)

An inspection pattern for inspecting misalignment of a photo process in a semiconductor manufacturing process, comprising: a first radial pattern in which a long rectangular bar pattern is equally arranged at a center point, similar to the first radial pattern, And a second radial pattern having an area that can fit within each bar pattern. The radial matching pattern of claim 1, wherein the first and second radial patterns are an eight-ray radial pattern.