KR940010133A - Manufacturing method of zinc oxide varistor - Google Patents

Manufacturing method of zinc oxide varistor Download PDF

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Publication number
KR940010133A
KR940010133A KR1019930021162A KR930021162A KR940010133A KR 940010133 A KR940010133 A KR 940010133A KR 1019930021162 A KR1019930021162 A KR 1019930021162A KR 930021162 A KR930021162 A KR 930021162A KR 940010133 A KR940010133 A KR 940010133A
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KR
South Korea
Prior art keywords
zinc oxide
producing
oxide varistor
varistor
added
Prior art date
Application number
KR1019930021162A
Other languages
Korean (ko)
Inventor
아쯔시 이가
마사히로 이토
히데유키 오키나카
Original Assignee
모리시타 요이찌
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모리시타 요이찌, 마쯔시다덴기산교 가부시기가이샤 filed Critical 모리시타 요이찌
Publication of KR940010133A publication Critical patent/KR940010133A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Abstract

본 발명은, 반도체소자를 포함한 전기회로속의 서지흡수등에 사용되는 산화아연바리스터의 제조방법에 관한 것으로서, 이산화아여나리스터는 저전압용의 것을 특성의 불균일이 크고, 부하의 인가에 대해서 특성변화가 큰것이 혼입되는 일이 있고, 또 이들변화는, 바리스터전압이 저하하는 방향으로 진행하므로 위험하였으므로, 이를 감안하여 직류부하, 펄스인가에 대해서 안정하고, 또 소자의 특성불균일이 작은 저전압용 바리스터공급을 목적으로 한 것이며, 그 구성에 있어서, 산화비스무트성분 및 산화티탄성분의 첨가물로서, 산화비스무트와 산화티탄의 혼합물에 열처리를 실시해서 얻은 합성분체를 첨가하므로서 전류-전압의 상승개시전압이 낮고, 비직선저항지수가 높고, 장시간의 전압부하에 대해서 안정한 산화아연바리스터를 얻을 수 있는 것을 특징으로 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a zinc oxide varistor used for surge absorption in an electric circuit including a semiconductor element, wherein a zinc oxide varistor is for low voltage and has a large variation in characteristics and a large change in characteristics upon application of a load. In addition, since these changes are dangerous because they proceed in a direction in which the varistor voltage decreases, the purpose is to provide a low voltage varistor supply that is stable against direct current load and pulse application and has a small characteristic unevenness of the device. In the constitution, as an additive of the bismuth oxide component and the titanium oxide component, the increase in starting voltage of the current-voltage is low and nonlinear, by adding a synthetic powder obtained by heat treatment to a mixture of bismuth oxide and titanium oxide. A high resistance index and stable zinc oxide varistor can be obtained for a long time voltage load. It is characterized by.

Description

산화아연바리스터의 제조방법Manufacturing method of zinc oxide varistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 제1의 실시예에 있어서의 산화아연바리스터를 표시한 개략도.1 is a schematic diagram showing a zinc oxide varistor in a first embodiment of the present invention.

Claims (7)

적어도 산화비스무트를 함유하는 산화아연바리스터의 제조공정에 있어서, 산화아연원료분체에 산화티탄과 산화비스무트의 혼합물에 일처리를 실시해서 제작된 합성분체를 첨가하는 것을 특징으로 하는 산화아연바리스터의 제조방법.In the process for producing a zinc oxide varistor containing at least bismuth oxide, a method for producing a zinc oxide varistor comprising adding a synthetic powder prepared by subjecting a mixture of titanium oxide and bismuth oxide to a zinc oxide raw material powder. . 제1항에 있어서, ZnO 100 Wt비에 대해서 또 알루미늄성분이 Aℓ2O3으로 환원해서 0.00062 Wt비-0.372Wt비첨가되는 것을 특징으로 하는 산화아연바리스터의 제조방법.The method for producing a zinc oxide varistor according to claim 1, wherein the aluminum component is reduced to Al 2 O 3 with respect to the ZnO 100 Wt ratio, and 0.00062 Wt ratio-0.372 Wt is added. 제2항에 있어서, 첨가되는 알루미늄성분이 질산알미늄이나 아세트산 알루미늄등과 같은 알루미늄염의 용액의 형태로 첨가되는 것을 특징으로 하는 산화아연바리스터의 제조방법.The method for producing a zinc oxide varistor according to claim 2, wherein the aluminum component to be added is added in the form of a solution of an aluminum salt such as aluminum nitrate or aluminum acetate. 제2항에 있어서, 또 안티몬 성분이 Sb2O3로 환산해서 0.018Wt비-0.72Wt비첨가되는 것을 특징으로 하는 산화아연바리스터의 제조방법.The method for producing a zinc oxide varistor according to claim 2, wherein the antimony component is added in an amount of 0.018 Wt ratio-0.72 Wt in terms of Sb 2 O 3 . 제2항에 있어서, 또 주석성분이 SnO2로 환산해서 0.005Wt-0.37Wt비 첨가되는 것을 특징으로 하는 산화아연바리스터의 제조방법.The method for producing a zinc oxide varistor according to claim 2, wherein the tin component is added in an amount of 0.005 Wt-0.37 Wt in terms of SnO 2 . 제4항에 있어서, 또 크롬성분이 Cr2O3로 환산해서 0.005Wt비-0.18Wt비첨가되는 것을 특징으로 하는 산화아연바러스터의 제조방법.The method for producing a zinc oxide varistor according to claim 4, wherein the chromium component is added in an amount of 0.005 Wt ratio-0.18 Wt in terms of Cr 2 O 3 . 입자직경 80-200㎛의 큰 ZnO입자와, 쌍정구조를 가진 입자직경 20-45㎛의 작은 ZnO입자에 의해서 구성된 산화아연소결체로 이루어진 것을 특징으로 하는 비직선저항체.A nonlinear resistor comprising a zinc oxide sintered body composed of large ZnO particles having a particle diameter of 80-200 μm and small ZnO particles having a twin diameter of 20-45 μm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021162A 1992-10-20 1993-10-13 Manufacturing method of zinc oxide varistor KR940010133A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP28146992 1992-10-20
JP92-281469 1992-10-20
JP92-301965 1992-11-12
JP30196592 1992-11-12

Publications (1)

Publication Number Publication Date
KR940010133A true KR940010133A (en) 1994-05-24

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ID=26554204

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930021162A KR940010133A (en) 1992-10-20 1993-10-13 Manufacturing method of zinc oxide varistor

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EP (1) EP0594120A3 (en)
KR (1) KR940010133A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3251134B2 (en) * 1994-08-29 2002-01-28 松下電器産業株式会社 Method for producing sintered zinc oxide
US5807510A (en) * 1995-09-07 1998-09-15 Mitsubishi Denki Kabushiki Kaisha Electric resistance element exhibiting voltage nonlinearity characteristic and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3776898D1 (en) * 1986-10-16 1992-04-02 Raychem Corp METHOD FOR PRODUCING A METAL OXIDE POWDER FOR A VARISTOR.
JPH01289218A (en) * 1988-05-17 1989-11-21 Matsushita Electric Ind Co Ltd Manufacture of varistor
DE3826356A1 (en) * 1988-08-03 1990-02-08 Philips Patentverwaltung METHOD FOR PRODUCING A NON-LINEAR VOLTAGE-RESISTANT RESISTANCE
GB2242065C (en) * 1990-03-16 1996-02-08 Ecco Ltd Varistor ink formulations

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EP0594120A3 (en) 1995-07-26
EP0594120A2 (en) 1994-04-27

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