KR840001759A - Voltage nonlinear resistor and its manufacturing method - Google Patents

Voltage nonlinear resistor and its manufacturing method Download PDF

Info

Publication number
KR840001759A
KR840001759A KR1019820001427A KR820001427A KR840001759A KR 840001759 A KR840001759 A KR 840001759A KR 1019820001427 A KR1019820001427 A KR 1019820001427A KR 820001427 A KR820001427 A KR 820001427A KR 840001759 A KR840001759 A KR 840001759A
Authority
KR
South Korea
Prior art keywords
voltage nonlinear
sintered body
oxide
nonlinear resistor
resistor according
Prior art date
Application number
KR1019820001427A
Other languages
Korean (ko)
Inventor
다께오 야마자끼 (외 3)
Original Assignee
미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR840001759A publication Critical patent/KR840001759A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers

Abstract

내용 없음No content

Description

전압비직선저항체 및 그 제법Voltage nonlinear resistor and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 전압 비직선 저항체의 단면도.2 is a cross-sectional view of the voltage nonlinear resistor of the present invention.

제3도는 산화인듐-산화주석막의 배합 비율에 의한 저항률의 관계를 나타내는 도.3 is a diagram showing the relationship of resistivity by the blending ratio of indium oxide-tin oxide film.

제4도는 산화아연을 주성분으로 하는 소결체의 열처리온도에 의한 비직선계수의 관계를 나타내는 도.4 is a diagram showing the relationship between the nonlinear coefficients and the heat treatment temperatures of sintered bodies containing zinc oxide as a main component.

Claims (17)

전압 비직선 저항성을 지닌 소결체 및 이 소결체의 표면에 형성된 전극으로 이루어지는 전압 비직선 저항체에 있어서, 상기 소결체와 전극 사이에 이 소결체의 벌크저항치보다 도저 저항치의 저저항층을 형성한 것을 특징으로 하는 전압 비직선 저항체.A voltage nonlinear resistor comprising a sintered body having a voltage nonlinear resistance and an electrode formed on the surface of the sintered body, wherein a low resistance layer having a doser resistance value is formed between the sintered body and the electrode than the bulk resistance of the sintered body. Nonlinear resistor. 저저항층은 산화인듐계, 산화 주석계 또는 산화인듐-산화주석계의 도전성막인 것을 특징으로 하는 특허청구의 범위 1기재의 전압비직선 저항체.The low resistance layer is a voltage nonlinear resistor according to claim 1, wherein the low resistance layer is an indium oxide-based, tin oxide-based, or indium oxide-tin oxide-based conductive film. 전압 비직선 저항성을 지닌 소결체가 산화아연을 주성분으로 하는 소결체인 것을 특징으로 하는 특허청구의 범위 1 또는 2기재의 전압비직선 저항체.A voltage nonlinear resistor according to claim 1 or 2, wherein the sintered compact having voltage nonlinear resistance is a sintered compact mainly composed of zinc oxide. 산화아연을 주성분으로 하는 소결체는 산화아연에 대하여 각각 0.01∼10몰%의 산화비스마스 및 산화망간을 첨가한 것을 특징으로 하는 특허청구의 범위 3기재의 전압비직선 저항체.A sintered body comprising zinc oxide as a main component is a voltage nonlinear resistor according to claim 3, wherein 0.01-10 mol% of bismuth oxide and manganese oxide are added to zinc oxide, respectively. 소결체는 γ형 산화비스마스를 실질적으로 포함하지 않는 것을 특징으로 하는 특허청구의 범위 1 내지 4기재의 어느 것인 전압비직 선저항체.The sintered compact is any one of the claims 1 to 4 described in the claim, characterized in that the γ-type bismuth oxide is substantially free. 전압비직선저항성을 지닌 소결체 및 이 소결체의 표면에 형성된 전극으로 이루어지는 전압 비직선저항체에 있어서, 상기 소결체와 전극간에 이 소결체의 벌크저항치보다도 저저항치의저저항층을 350∼520℃의 가열 접착에 의하여 형성한 것을 특징으로 하는 전압비직선저항체.In a voltage nonlinear resistor comprising a sintered body having a voltage nonlinear resistance and an electrode formed on the surface of the sintered body, a low resistance layer having a lower resistance value than the bulk resistance value of the sintered body between the sintered body and the electrode is heated by 350 to 520 캜. A voltage nonlinear resistor, which is formed. 저저항층은 산화인듐계, 산화주석계 또는 산화인-산화주석계의 도전성막인 것을 특징으로 하는 특허청구의 범위 6기재의 전압비직선 저항체.The low resistance layer is a voltage non-linear resistor according to claim 6, wherein the low resistance layer is an indium oxide-based, tin oxide-based, or phosphorus-tin oxide-based conductive film. 전압 비직선 저항성을 지닌 소결체가 산화아연을 주성분으로 하는 소결체인 것을 특징으로 하는 특허청구의 범위 6기재의 전압비직선저항체.A voltage nonlinear resistor according to claim 6, wherein the sintered compact having voltage nonlinear resistance is a sintered compact composed mainly of zinc oxide. 산화아연을 주성분으로 하는 소결체는 산화아연에 대하여 각각 0.01∼10몰%의 산화비스마스 및 산화망간을 첨가한 것을 특징으로 하는 특허청구의 범위 8기재의 전압비직선저항체.A sintered body comprising zinc oxide as a main component is a voltage nonlinear resistor according to claim 8, wherein 0.01-10 mol% of bismuth oxide and manganese oxide are added to zinc oxide, respectively. 소결체는 γ형 산화비스마스를 실질적으로 포함하지 않는 것을 특징으로 하는 특허청구의 범위 6기재의 전압비직선저항체.The sintered compact is a voltage nonlinear resistor according to claim 6, characterized in that the sintered body substantially does not contain γ-type bismuth oxide. 전압비직선저항성을 지닌 소결체의 전극을 형성할 단면에 이 소결체의 벌크저항치보다도 저저항치의 저저항층으로 되는 재료로 이루어지는 층을 형성하며, 350∼520℃에서 가열 접착하여 이 저저항층을 상기 소결체에 형성한 후, 이 막의 표면에 전극을 형성하는 것을 특징으로 하는 전압비직선저항체의 제법.A layer made of a material of a low resistance layer having a lower resistance value than a bulk resistance value of the sintered body is formed on the end face of the sintered body having the voltage nonlinear resistance, and is heat-bonded at 350 to 520 ° C. to form the low resistance layer. An electrode is formed on the surface of this film after formation in the method. 저저항층의 재료가 인듐화합물 및/또는 주석화합물을 주성분으로 하는 것을 특징으로 하는 특허청구의 범위 11기재의 전압비직선 저항체의 제법.A method for producing a voltage nonlinear resistor according to claim 11, wherein the material of the low resistance layer is mainly composed of indium compound and / or tin compound. 전압 비직선 저항성을 지닌 소결체의 전극을 형성한 단면에 상기 저저항층으로 되는 재료를 도포함으로써 이 재료로 이루어지는 층을 형성하는 것을 특징으로 하는 특허청구의 범위 11 또는 12기재의 전압비직선 저항체의 제법.The method for producing a voltage nonlinear resistor according to claim 11 or 12, wherein a layer made of this material is formed by applying a material of the low resistance layer to a cross section on which an electrode of a sintered body having voltage nonlinear resistance is formed. . 저저항층으로 되는 재료가 인듐화합물 또는 주석화합물을 주성분으로 하는 용액, 또는 이들 혼합용액인 것을 특징으로 하는 특허청구의 범위 13기재의 전압비직선저항체의 제법.A method for producing a voltage nonlinear resistor according to claim 13, wherein the material of the low resistance layer is a solution mainly composed of an indium compound or tin compound, or a mixed solution thereof. 전압 비직선 저항성을 지닌 소결체가 산화아연을 주성분으로 하는 소결체인 것을 특징으로 하는 특허청구의 범위 11 또는 14기재의 어느 것이 전압비직선저항체의 제법.The method for producing a voltage nonlinear resistor according to any one of claims 11 to 14, wherein the sintered compact having voltage nonlinear resistance is a sintered compact composed mainly of zinc oxide. 산화아연을 주성분으로 하는 소결체는 산화아연에 대하여 각각 0.01∼10몰%의 산화비스마스 및 산화망간을 첨가한 것을 특징으로 하는 특허청구의 범위 15기재의 전압비직선 저항체의 제법.A method for producing a voltage nonlinear resistor according to claim 15, wherein the sintered body containing zinc oxide as a main component is added with bismuth oxide and manganese oxide of 0.01 to 10 mol%, respectively, based on zinc oxide. 소결체는 γ형 산화비스마스를 실질적으로 포함하지 않는 것을 특징으로 하는 특허청구의 범위 11 내지 16기재의 어느 것의 전압비직선 저항체의 제법.The method for producing a voltage nonlinear resistor according to any one of claims 11 to 16, wherein the sintered body is substantially free of γ-type bismuth oxide. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019820001427A 1981-04-03 1982-04-01 Voltage nonlinear resistor and its manufacturing method KR840001759A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56049455A JPS57164502A (en) 1981-04-03 1981-04-03 Voltage nonlinear resistor and method of producing same
JP49455 1981-04-03

Publications (1)

Publication Number Publication Date
KR840001759A true KR840001759A (en) 1984-05-16

Family

ID=12831607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019820001427A KR840001759A (en) 1981-04-03 1982-04-01 Voltage nonlinear resistor and its manufacturing method

Country Status (4)

Country Link
EP (1) EP0062314A3 (en)
JP (1) JPS57164502A (en)
KR (1) KR840001759A (en)
IN (1) IN157791B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265304A (en) * 1985-09-17 1987-03-24 株式会社村田製作所 Voltage nonlinear resistor
DE3823698A1 (en) * 1988-07-13 1990-01-18 Philips Patentverwaltung NON-LINEAR VOLTAGE RESISTANCE
DE3826282A1 (en) * 1988-07-29 1990-02-08 Siemens Ag Electrical machine or apparatus having a winding, which has metal-oxide resistors for overvoltage limiting, and a method for its production
JP2556151B2 (en) * 1989-11-21 1996-11-20 株式会社村田製作所 Stacked Varistor
JP2021131379A (en) * 2020-02-19 2021-09-09 三菱マテリアル株式会社 Temperature sensor and manufacturing method therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1556638A (en) * 1977-02-09 1979-11-28 Matsushita Electric Ind Co Ltd Method for manufacturing a ceramic electronic component
JPS6055969A (en) * 1983-09-05 1985-04-01 永田　暢良 Initial fire extinguishing cloth

Also Published As

Publication number Publication date
EP0062314A2 (en) 1982-10-13
JPS57164502A (en) 1982-10-09
EP0062314A3 (en) 1983-09-07
JPS6243324B2 (en) 1987-09-12
IN157791B (en) 1986-06-21

Similar Documents

Publication Publication Date Title
KR830009598A (en) Conductive paste for forming a conductive layer by firing on porcelain
KR950011332A (en) Transparent conductive material including gallium-indium-oxide
SE404104B (en) VOLTAGE-RESISTANT RESISTANCE
GB1244745A (en) Non-linear resistance material
JPS54126625A (en) Internally oxidized silver based contact material containing tin oxide and having good contact resistance
GB877026A (en) N-type semiconductors and method of manufacture
DE2308073A1 (en) CERAMIC ELECTRIC RESISTOR BODY AND METHOD FOR MANUFACTURING IT
KR840001759A (en) Voltage nonlinear resistor and its manufacturing method
KR830006781A (en) Thick Film Resistance Circuit
JPS52122484A (en) Field effect type polisilicon resistance element
KR960015607A (en) Voltage nonlinear resistor and manufacturing method thereof
GB1377564A (en) Electronic components having ionic stability
BR8401989A (en) ELECTRIC INSULATOR, PRESENTING IMPROVED INSENSIBILITY TO POLLUTION
JPS51128278A (en) Integrated circuit with resistance element
GB1457777A (en) Optoelectronic semiconductor devices
KR900003919A (en) Nonlinear Voltage-Dependent Resistor Manufacturing Method
DE2326896A1 (en) OXIDE SEMICONDUCTOR-METAL CONTACT RESISTOR ELEMENT
JPS54139095A (en) Preparation of voltage nonlinear resistance element
JPH0121526Y2 (en)
SU434517A1 (en) COMPOSITION FOR THE MANUFACTURE OF THE ACTIVE LAYER OF THE THRESHOLD ELEMENT
GB884943A (en) Electrical circuit elements
GB1056510A (en) Improvements in or relating to ceramic positive temperature coefficient resistors
KR940010133A (en) Manufacturing method of zinc oxide varistor
KR830006779A (en) Voltage nonlinear resistor and its manufacturing method
JPS54111649A (en) Lighting arrester element