KR940002877A - Chip Capacitors for Electromagnetic Noise Cancellation - Google Patents

Chip Capacitors for Electromagnetic Noise Cancellation Download PDF

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Publication number
KR940002877A
KR940002877A KR1019920011796A KR920011796A KR940002877A KR 940002877 A KR940002877 A KR 940002877A KR 1019920011796 A KR1019920011796 A KR 1019920011796A KR 920011796 A KR920011796 A KR 920011796A KR 940002877 A KR940002877 A KR 940002877A
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South Korea
Prior art keywords
signal line
electrode means
stacked
ground
internal electrode
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KR1019920011796A
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Korean (ko)
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KR940011697B1 (en
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이창화
이석진
이상석
최태구
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양승택
재단법인한국전자통신연구소
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Publication of KR940002877A publication Critical patent/KR940002877A/en
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Publication of KR940011697B1 publication Critical patent/KR940011697B1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/35Feed-through capacitors or anti-noise capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

본 발명은 전자파 잡음 제거용 칩형 캐패시터에 관한 것으로, 내부전극 재질은 적게 사용하지만 신호선의 일부분으로 사용되는 내부전극과 접지에 연결되는 내부전극에 의해 정전용량을 결정하는 유효전극 면적은 같으므로 정전용량의 감소는 없음 주파수가 높아질수록 소자의 등가직렬저항을 많이 감소시킬 수 있어 전력손실에 의한 열의 발생과 온도상승 억제하는, 또한 고주파에서 접지에 연결되는 내부전극의 인덕턴스를 감소시킴과 동시에 고주파에서 임피던스도 작게하여 컴퓨터, 통신기기등 전자기기의 신호선에서 많은 문제되고 있는 고주파 잡음을 제거하는 전자파 잡음 제거용 칩형 캐패시터에 관한 것이다.The present invention relates to a chip type capacitor for eliminating electromagnetic noise, wherein the internal electrode material is used less, but the effective electrode area for determining the capacitance by the internal electrode used as part of the signal line and the internal electrode connected to the ground has the same capacitance. There is no decrease in the frequency. The higher the frequency, the more the equivalent series resistance of the device can be reduced, thereby suppressing heat generation and temperature rise due to power loss, and reducing the inductance of the internal electrode connected to the ground at high frequency and at the same time high impedance The present invention relates to a chip type capacitor for eliminating electromagnetic noise, which removes a lot of high frequency noise that is a problem in signal lines of electronic devices such as computers and communication devices.

Description

전자파 잡음 제거용 칩형 캐패시터Chip Capacitors for Electromagnetic Noise Cancellation

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명에 따른 일 실시예의 내부전극형상 및 적층구조도.4 is an internal electrode shape and a laminated structure of an embodiment according to the present invention.

제5도는 본 발명에 따른 일 실시예의 내부전극 형성도.5 is a view illustrating the formation of an internal electrode according to an embodiment of the present invention.

제6도는 본 발명에 따른 일 실시예의 내부전극형상 및 적층구조도.6 is an internal electrode shape and a laminated structure diagram of an embodiment according to the present invention.

Claims (4)

신호선의 일부로 사용되는 내부전극과 접지에 연결되는 내부전극이 유전체를 사이에 두고 다수의 층으로 적층되어 있고, 신호선에 연결되는 외부단자(5', 5") 및 접지선에 연결되는 접지단자(6', 6")를 구비하고 있는 3단자 칩형 캐패시터에 있어서, 상기 양측 접지단자(6', 6")에 각각 연결되고 최상층 및 최하층에 적층되는 한조의 접지용 전극수단(4), 상기 한조의 접지용 전극수단 사이에 적층되되, 적어도 한조이상으로 적층되어 신호선의 일부분으로 사용되는 신호선용 전극수단(2) 및 상기 신호선용 전극수단의 한조를 이루는 두 신호전용 전극수단 사이에 각각 적층되되, 적어도 두개이상의 전극이 각각 교번적으로 상호 반대방향 접지단자에만 연결되도록 형성된 고주파 잡음 통로용 전극수단(3', 3")을 구비하고 있는 것을 특징으로 하는 전자파 잡음 제거용 칩형 캐패시터.The internal electrode used as part of the signal line and the internal electrode connected to the ground are stacked in multiple layers with a dielectric interposed therebetween, and the external terminals 5 'and 5 "connected to the signal line and the ground terminal connected to the ground line 6 A three-terminal chip type capacitor having a 6 '), comprising a set of grounding electrode means 4 connected to the both ground terminals 6' and 6 "and stacked on the uppermost layer and the lowermost layer, respectively. Stacked between the grounding electrode means, at least one pair or more stacked between the signal line electrode means (2) used as part of the signal line and the two signal-only electrode means forming a pair of the signal line electrode means, respectively, at least Electromagnetic noise suppressor, characterized in that the two or more electrodes are provided with electrode means (3 ', 3 ") for the high-frequency noise path, respectively, which are alternately connected only to opposite ground terminals. Giant chip capacitors. 신호선의 일부로 사용되는 내부전극과 접지에 연결되는 내부전극이 유전체를 사이에 두고 다수의 층으로 적층되어 있고, 신호선에 연결되는 외부단자(5', 5") 및 접지선에 연결되는 접지단자(6', 6")를 구비하고 있는 3단자 칩형 캐패시터에 있어서, 상기 양측 접지단자(6', 6")에 각각 연결되고 최상층 및 최하층에 적층되는 한조의 접지용 전극수단(4), 상기 한조의 접지용 전극수단 사이에 적층되되, 적어도 한조이상으로 적층되어 신호선의 일부분으로 사용되는 신호선용 전극수단(2) 및 상기 신호선용 전극수단의 한조를 이루는 두 신호선용 전극수단 사이에 각각 하나씩 적층되며 상기 각조의 신호선용 전극수단 사이에 적층된 전극이 각각 교번적으로 상호 반대방향 접지단자에만 연결되도록 형성된 고주파 잡음 통로용 전극수단(3', 3")을 구비하고 있는 것을 특징으로 하는 전자파 잡음 제거용 칩형 캐패시터.The internal electrode used as part of the signal line and the internal electrode connected to the ground are stacked in multiple layers with a dielectric interposed therebetween, and the external terminals 5 'and 5 "connected to the signal line and the ground terminal connected to the ground line 6 A three-terminal chip type capacitor having a 6 '), comprising a set of grounding electrode means 4 connected to the both ground terminals 6' and 6 "and stacked on the uppermost layer and the lowermost layer, respectively. Stacked between at least one pair of grounding electrode means, each of which is stacked between at least one pair of signal line electrode means (2) used as a part of a signal line and between two signal line electrode means constituting a pair of the signal line electrode means; Electrode means for the high frequency noise passage (3 ', 3 ") is formed so that the electrodes stacked between each set of signal line electrode means are alternately connected only to opposite ground terminals. Chip-type capacitor for electromagnetic wave noise reduction, characterized by. 제1항 또는 제2항에 있어서, 상기 전자파 잡음 통로용 전극수단(3', 3")은 T자 형태에서의 연결부에 일정부분에 상기 신호선용 내부전극(2)과 직각방향으로 깊게 함몰시켜 요철부로 형성되어 있는 것을 특징으로 하는 전자파 잡음 제거용 칩형 캐패시터.3. The electromagnetic wave noise passage electrode means (3 ', 3 ") is recessed in a portion perpendicular to the signal line inner electrode (2) at a predetermined portion in a connection portion in a T-shape. A chip type capacitor for removing electromagnetic noise, characterized in that it is formed of an uneven portion. 제1항 또는 제2항에 있어서, 상기 전자파 잡음 통로용 전극수단(3b', 3b")은 T자 형태에서의 연결부에 이미 형성된 상기 함몰된 요철부를 더욱 확장하여 직각으로 더 확장한 것을 특징으로 하는 전자파 잡음 제거용 칩형 캐패시터.3. The electromagnetic wave noise passage electrode means (3b ', 3b ") further extends at right angles by further extending the recessed concave-convex portions already formed in the connecting portion in the T-shape. Chip capacitors for noise reduction. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920011796A 1992-07-02 1992-07-02 Chip-type capacitor for eliminating noise according to electromagnetic wave KR940011697B1 (en)

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Application Number Priority Date Filing Date Title
KR1019920011796A KR940011697B1 (en) 1992-07-02 1992-07-02 Chip-type capacitor for eliminating noise according to electromagnetic wave

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Application Number Priority Date Filing Date Title
KR1019920011796A KR940011697B1 (en) 1992-07-02 1992-07-02 Chip-type capacitor for eliminating noise according to electromagnetic wave

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KR940002877A true KR940002877A (en) 1994-02-19
KR940011697B1 KR940011697B1 (en) 1994-12-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100372848B1 (en) * 2000-02-09 2003-02-19 주식회사 이노칩테크놀로지 Integrated chip part with low inductance for high frequency and fabricating method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100372848B1 (en) * 2000-02-09 2003-02-19 주식회사 이노칩테크놀로지 Integrated chip part with low inductance for high frequency and fabricating method therefor

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