KR940001438A - Up-structure bipolar transistor and manufacturing method thereof - Google Patents

Up-structure bipolar transistor and manufacturing method thereof Download PDF

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Publication number
KR940001438A
KR940001438A KR1019920009982A KR920009982A KR940001438A KR 940001438 A KR940001438 A KR 940001438A KR 1019920009982 A KR1019920009982 A KR 1019920009982A KR 920009982 A KR920009982 A KR 920009982A KR 940001438 A KR940001438 A KR 940001438A
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South Korea
Prior art keywords
base
bipolar transistor
forming
electrode
defining
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KR1019920009982A
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Korean (ko)
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KR950007348B1 (en
Inventor
김귀동
구용서
한태현
구진근
Original Assignee
양승덕
재단법인 한국전자통신연구소
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Application filed by 양승덕, 재단법인 한국전자통신연구소 filed Critical 양승덕
Priority to KR1019920009982A priority Critical patent/KR950007348B1/en
Priority to JP5137514A priority patent/JP2524079B2/en
Publication of KR940001438A publication Critical patent/KR940001438A/en
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Publication of KR950007348B1 publication Critical patent/KR950007348B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

본 발명은 좁은 폭을 갖는 진성 베이스영역을 N+ 매몰층에 접합시킨것으로써 상향동작 특성과 하향동작 특성을 대등하게 하는 바이폴라 트랜지스터 및 그 제조방법에 관한 것으로, 에미터와 베이스 및 컬떽터층을 형성하는 단계와, 소자간의 전기적 절연을 제공하는 트렌치 격리를 형성하는 단계와, 필드산화막을 형성하는 단계와. N+단결정 실리콘 전극과 컬렉터 영역을 정의하는 단계와, 베이스 접점영역을 정의하는 단계 및 베이스 전극 및 금속 배선을 형성하는 단계를 포함하는 것이 특징이다.The present invention relates to a bipolar transistor and a method of fabricating the same, wherein the intrinsic base region having a narrow width is bonded to the N + buried layer so that the upward motion characteristics and the downward motion characteristics are equal. Forming trench isolation to provide electrical isolation between the devices, forming a field oxide film; Defining an N + single crystal silicon electrode and a collector region; defining a base contact region; and forming a base electrode and a metal wiring.

Description

상향구조 바이폴라트랜지스터 및 그 제조방법Up-structure bipolar transistor and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의해 완성된 상향구조 바이폴라소자의 단면도,2 is a cross-sectional view of an upward structure bipolar device completed by the present invention,

제3도의 (a) 내지 (f)는 본 발명에 의한 상향구조 바이폴라 소자의 제조공정별 단면도.Figure 3 (a) to (f) is a cross-sectional view of the manufacturing process of the up-structure bipolar device according to the present invention.

Claims (2)

바이폴라 트랜지스터 소자에 있어서, 에미터-베이스 전극 및 베이스-컬렉터 전극이 자기 정렬되고 진성 베이스 영역이 N+ 매몰층 상에 접합된 구조를 갖는 것을 특징으로 하는 상향구조 바이폴라 트랜지스터.A bipolar transistor device, wherein the up-structure bipolar transistor has a structure in which the emitter-base electrode and the base-collector electrode are self-aligned and the intrinsic base region is bonded on the N + buried layer. 바이폴라 트랜지스터의 제조방법에 있어서, 에미터와 베이스 및 컬렉터층을 헝성하기 위하여 폴리실리콘 기판(1)상에 n+매몰층(2)을 형성한 후 폴리실리콘층(3), n-에피택결층(4), 완충 산화막(5), 질화막(6), 저온 증착 산화막(7)을 순차로 형성하는 단계와. 소자간의 전기적 절연을 제공하는 트렌치 격리를 형성하는 단계와, 필드산화막(9)을 형성하는 단계와, N+단결정 실리콘 전극과 컬렉터 영역을 정의하는 단계와, 베이스 접점영역(17)을 정의하는 단계 및 베이스 전극 및 금속배선을 형성하는 단계를 포함하는 것을 특징으로 하는 상향구조 바이폴라 트랜지스터의 제조방법.In the method of manufacturing a bipolar transistor, an n + buried layer 2 is formed on a polysilicon substrate 1 to form an emitter, a base, and a collector layer, and then a polysilicon layer 3, an n-epitaxial layer ( 4) sequentially forming a buffer oxide film (5), a nitride film (6), and a low temperature deposition oxide film (7). Forming trench isolation to provide electrical isolation between devices, forming a field oxide film 9, defining an N + single crystal silicon electrode and a collector region, defining a base contact region 17, and A method of manufacturing an up-structure bipolar transistor comprising the step of forming a base electrode and a metal wiring. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920009982A 1992-06-09 1992-06-09 Bipolar transistor with upward structure and its manufacturing KR950007348B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019920009982A KR950007348B1 (en) 1992-06-09 1992-06-09 Bipolar transistor with upward structure and its manufacturing
JP5137514A JP2524079B2 (en) 1992-06-09 1993-06-08 Upward structure type bipolar transistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920009982A KR950007348B1 (en) 1992-06-09 1992-06-09 Bipolar transistor with upward structure and its manufacturing

Publications (2)

Publication Number Publication Date
KR940001438A true KR940001438A (en) 1994-01-11
KR950007348B1 KR950007348B1 (en) 1995-07-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920009982A KR950007348B1 (en) 1992-06-09 1992-06-09 Bipolar transistor with upward structure and its manufacturing

Country Status (2)

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JP (1) JP2524079B2 (en)
KR (1) KR950007348B1 (en)

Also Published As

Publication number Publication date
KR950007348B1 (en) 1995-07-10
JP2524079B2 (en) 1996-08-14
JPH0669219A (en) 1994-03-11

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