KR940001211A - Intergranular Semiconducting Magnetic Capacitor - Google Patents

Intergranular Semiconducting Magnetic Capacitor Download PDF

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Publication number
KR940001211A
KR940001211A KR1019920010785A KR920010785A KR940001211A KR 940001211 A KR940001211 A KR 940001211A KR 1019920010785 A KR1019920010785 A KR 1019920010785A KR 920010785 A KR920010785 A KR 920010785A KR 940001211 A KR940001211 A KR 940001211A
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KR
South Korea
Prior art keywords
mol
magnetic capacitor
srtio
composition
semiconducting
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KR1019920010785A
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Korean (ko)
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KR940011059B1 (en
Inventor
김윤호
오태성
이병찬
Original Assignee
박원희
한국과학기술연구원
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Priority to KR1019920010785A priority Critical patent/KR940011059B1/en
Publication of KR940001211A publication Critical patent/KR940001211A/en
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Publication of KR940011059B1 publication Critical patent/KR940011059B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics

Abstract

본 발명은 다결정 구조의 반도성 결정입자 사이에 입계 절연층이 형성된 SrTiO3계 입계형 반도성 자기 콘덴서에 관한 것이다.The present invention relates to an SrTiO 3 -based grain type semiconducting magnetic capacitor having a grain boundary insulating layer formed between semiconducting crystal grains of a polycrystalline structure.

본 발명의 SrTiO3계 입계형 반도성 자기 콘덴서의 조성물은 주성분인 SrTiO31몰(mole)에 부성분으로 TiO20.01~0.04몰 Dy2O30.001~0.010몰, ZnO 0.001~0.007몰, MnO20.002~0.012몰, Al2O30.001~0.07몰의 범위로 첨가된 조성이며, 이와같은 조성물을 혼합, 분쇄 및 성형하여 환원분위기에서 소결후 금속산화물로 구성된 절연 물질을 결정입계로 확산처리함으로써 유전상수 50,000이상, 유전손실 0.5%이하, 절연저항 10Gcm이상의 전기적 특성을 갖는 입계형 반도성 자기 콘덴서가 얻어지게 된다.The composition of the SrTiO 3 based grain type semiconducting magnetic capacitor according to the present invention is composed of 0.01 to 0.04 mol of Dy 2 O 3 0.001 to 0.010 mol, ZnO 0.001 to 0.007 mol, and MnO 2 as a secondary component to 1 mol (mole) of SrTiO 3 as a main component. It is a composition added in the range of 0.002 to 0.012 mol, Al 2 O 3 0.001 to 0.07 mol, and the composition is mixed, pulverized and molded, and the dielectric material is diffused by grain boundary treatment of the insulating material composed of metal oxide after sintering in a reducing atmosphere. A grain-shaped semiconducting magnetic capacitor having an electrical property of 50,000 or more constant, 0.5% or less of dielectric loss and 10Gcm or more of insulation resistance is obtained.

Description

입계형 반도성 자기콘덴서Intergranular Semiconducting Magnetic Capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명의 입계형 반도성 자기콘덴서의 단면구조도.1 is a cross-sectional structure diagram of a grain boundary semiconducting magnetic capacitor of the present invention.

제 2 도는 본 발명의 입계형 반도성 자기콘덴서의 온도변화에 따른 유전상수의 변화율을 나타낸 도표.2 is a chart showing the rate of change of the dielectric constant according to the temperature change of the grain boundary semiconducting capacitor of the present invention.

Claims (3)

주성분인 SrTiO31몰에 부성분으로 TiO20.01∼0.04몰, Dy2O30.001∼0.010몰, ZnO 0.001∼0.007몰, MnO20.002∼0.012몰 및 Al2O30.01∼0.07몰 첨가되어 이루어진 입계형 반도성 자기콘덴서 제조용 조성물.A particle formed by adding 0.01 to 0.04 mol of TiO 2 , 0.001 to 0.010 mol of Dy 2 O 3, 0.001 to 0.007 mol of ZnO, 0.002 to 0.012 mol of MnO 2 , and 0.01 to 0.07 mol of Al 2 O 3 as an auxiliary component to 1 mol of SrTiO 3 as a main component. Composition for preparing a type semiconducting magnetic capacitor. 제 1 항에 있어서, 주성분이 TiO20.01∼0.02몰, Dy2O30.002∼0.005몰, ZnO 0.001∼0.007몰, MnO20.005∼0.009몰 및 Al2O30.03∼0.04몰 첨가되어 이루어진 입계형 반도성 자기콘덴서 제조용 조성물.The grain boundary type according to claim 1, wherein the main component is 0.01 to 0.02 mol of TiO 2 , 0.002 to 0.005 mol of Dy 2 O 3 , 0.001 to 0.007 mol of ZnO, 0.005 to 0.009 mol of MnO 2 and 0.03 to 0.04 mol of Al 2 O 3. A composition for preparing a semiconducting magnetic capacitor. 주성분인 SrTiO31몰에 부성분으로 Tio20.01∼0.04몰, Dy2O30.001∼0.010몰, ZnO 0.001∼0.007몰, MnO20.002∼0.012몰 및 Al2O30.01∼0.07몰 첨가되어 이루어진 조성의 유전체 자기를 환원분위기의 1400∼1470℃에서 소결하여 결정입자를 반도체화 하고, PbO등의 절연물질로 구성된 절연페이스트를 도포하여 대기중에서 열처리해서 입계절연층을 형성하고 소결체의 양면에 외부전극을 형성하여서 된 입계형 반도성 자기콘덴서.A composition consisting of 0.01 to 0.04 mol of Tio 2 , 0.001 to 0.010 mol of Dy 2 O 3, 0.001 to 0.007 mol of ZnO, 0.002 to 0.012 mol of MnO 2 and 0.01 to 0.07 mol of Al 2 O 3 as an auxiliary component to 1 mol of SrTiO 3 as a main component. The dielectric porcelain was sintered at 1400 ~ 1470 ℃ in the reducing atmosphere to crystallize the crystal grains, coated with an insulating paste made of insulating material such as PbO, and heat-treated in the air to form a grain boundary insulating layer. Formed intergranular semiconducting magnetic capacitor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920010785A 1992-06-20 1992-06-20 Semiconductor condenser KR940011059B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920010785A KR940011059B1 (en) 1992-06-20 1992-06-20 Semiconductor condenser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920010785A KR940011059B1 (en) 1992-06-20 1992-06-20 Semiconductor condenser

Publications (2)

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KR940001211A true KR940001211A (en) 1994-01-11
KR940011059B1 KR940011059B1 (en) 1994-11-22

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KR1019920010785A KR940011059B1 (en) 1992-06-20 1992-06-20 Semiconductor condenser

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102392041B1 (en) 2017-03-10 2022-04-27 삼성전자주식회사 Dielectric material, metod of manufacturing thereof, and dielectric devices and electronic devices including the same
KR102325821B1 (en) 2017-03-31 2021-11-11 삼성전자주식회사 Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same

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