KR930018756A - Thin film transistor of liquid crystal display and manufacturing method - Google Patents

Abstract

The source electrode and the drain electrode of the LCD TFT were formed by the lift-off method between the gate insulating film and the semiconductor layer. Therefore, the series resistance between the source electrode and the drain electrode can be reduced to increase the signal transfer speed. In addition, the thickness of the semiconductor layer can be reduced to reduce the off current of the TFT, thereby improving the reliability and efficiency of the LCD. In addition, when the channel region is formed, defects such as dislocations are prevented from occurring on the surface of the semiconductor layer, thereby improving the electrical characteristics of the TFT.

Description

Thin film transistor of liquid crystal display and manufacturing method

Since this is an open matter, no full text was included.

3 (a) to 3d are manufacturing process diagrams of the thin film transistor of the liquid crystal display according to the exemplary embodiment of the present invention.

Claims (12)

A glass insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating film formed on the entire surface of the structure, and a gate spaced apart by a predetermined interval between the gate insulating films A high concentration semiconductor layer formed to expose the insulating layer, a source electrode and a drain electrode formed on an upper surface of the high concentration semiconductor layer, and a source portion and a drain electrode and a predetermined portion on the gate insulating layer exposed by the source electrode and the drain electrode. A thin film transistor of a liquid crystal display device comprising a semiconducting layer formed so as to overlap and a protective layer formed on the semiconductor layer. The thin film transistor of claim 1, wherein the gate electrode is formed of one metal arbitrarily selected from a crowd consisting of Ti, Al, Cr, Ta, and W. The thin film transistor of claim 1, wherein the gate insulating layer is formed of one insulating material arbitrarily selected from the group consisting of silicon oxide and silicon nitride. The thin film transistor of claim 1, wherein the high concentration semiconductor layer is formed of one semiconductor arbitrarily selected from the group consisting of polycrystalline silicon, amorphous silicon, and hydrogenated amorphous silicon doped with high concentration of n-type impurities. 2. The thin film transistor of claim 1, wherein the source electrode and the drain electrode are formed of one metal arbitrarily selected from the group consisting of Al, Cr, Ta, and W. The thin film transistor of claim 1, wherein the source electrode and the drain electrode are formed of metal silicide. The thin film transistor of claim 1, wherein the semiconductor layer is formed of one semiconductor arbitrarily selected from the group consisting of polycrystalline silicon, amorphous silicon, and hydrogenated amorphous silicon. The thin film transistor of claim 1, wherein the protective layer is formed of any insulating material selected from the group consisting of silicon oxide and silicon nitride. Forming a gate electrode on a glass insulating substrate in a conventional manner; forming a gate insulating film on the entire surface of the structure; and forming a first photoresist pattern to protect the surface of the gate insulating film on the gate electrode. A step of forming a high concentration semiconductor layer on the entire surface of the structure, a step of forming a conductive layer on top of the high concentration semiconductor layer, a high concentration semiconductor layer on the first photoresist pattern and the first photoresist pattern, and conductive Removing the layers sequentially to expose the gate insulating film to form a source electrode and a drain electrode, forming a semiconductor layer on the entire surface of the structure, forming a protective layer on top of the semiconductor layer; A portion of the gate insulating film exposed by the high concentration semiconductor layer and the source electrode and the drain electrode adjacent to the gate insulating film are protected. Forming a second photoresist pattern on the upper portion of the protective layer, and sequentially removing the protective layer and the semiconductor layer exposed by the second photoresist pattern, and then removing the second photoresist pattern. Method of manufacturing thin film transistor of liquid crystal display device. The method of claim 9, wherein the light is irradiated from the rear surface of the insulating substrate using the gate electrode as the exposure mask during the first photoresist pattern forming process. 10. The method of claim 9, wherein the first photoresist pattern is formed by stacking the first photoresist pattern in two layers with photosensitive materials having different photosensitivity. 10. The method of manufacturing a thin film transistor of a liquid crystal display device according to claim 9, wherein the step of removing the high concentration semiconductor layer and the conductive layer on the first photoresist pattern and the first photoresist pattern is performed by a normal lift-off process. ※ Note: The disclosure is based on the initial application.