KR930017289A - 가변 주파수 발진 회로 - Google Patents

가변 주파수 발진 회로 Download PDF

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Publication number
KR930017289A
KR930017289A KR1019920000161A KR920000161A KR930017289A KR 930017289 A KR930017289 A KR 930017289A KR 1019920000161 A KR1019920000161 A KR 1019920000161A KR 920000161 A KR920000161 A KR 920000161A KR 930017289 A KR930017289 A KR 930017289A
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KR
South Korea
Prior art keywords
transistor
amplifier
variable frequency
circuit
reference current
Prior art date
Application number
KR1019920000161A
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English (en)
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KR940007972B1 (ko
Inventor
이준성
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019920000161A priority Critical patent/KR940007972B1/ko
Priority to GB9300108A priority patent/GB2263207B/en
Priority to JP5000319A priority patent/JP2588823B2/ja
Priority to DE4300258A priority patent/DE4300258B4/de
Priority to US08/002,266 priority patent/US5343170A/en
Publication of KR930017289A publication Critical patent/KR930017289A/ko
Application granted granted Critical
Publication of KR940007972B1 publication Critical patent/KR940007972B1/ko

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/46—One-port networks
    • H03H11/52—One-port networks simulating negative resistances
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/46—One-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H03B1/04—Reducing undesired oscillations, e.g. harmonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0058—Circuit elements of oscillators with particular transconductance characteristics, e.g. an operational transconductance amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0062—Bias and operating point
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0092—Measures to linearise or reduce distortion of oscillator characteristics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B27/00—Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)

Abstract

제1및 제2의 가변 상호 콘덕턴스(gm) 증폭단과, 제1gm증폭단 출력과 제2gm증폭단의 정(+) 입력단자 간에 연결된 제1콘덴서 및 부성저항회로와, 제2gm증폭단 출력은 제2콘덴서를 경유하여 제1gm증폭단의 부(-) 입력단으로 귀환 연결되고, 제1 및 제2gm증폭단 각각의 정(+) 빛 부(-)입력단은 접지되어 있으며, 상기 연결된 제1및 제2gm증폭단은 직류 제어 입력 전압을 받아 gm값을 연동으로 변화시켜 대응 가변 주파수 신호를 제2gm증폭단이 축력하도록 한 것을 특징으로 하는 가변 주파수 발진 회로.

Description

가변 주파수 발진 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명 회로의 앞단에 설치되는 전치 회로의 상세 구성도, 제5도는 본 발명에 따른 부성 저항 회로의 상세 구성도이다.

Claims (4)

  1. 제1및 제2의 가변 상호 콘덕턴스(gm) 증폭단과, 제1gm증폭단 출력과 제2gm증폭단의 정(+)입력단자간에 연결된 제1콘덴서 및 부성저항회로와 제2gm증폭단 출력은 제2콘덴서를 경유하여 제1gm증폭단의 부(-)입력단으로 귀환 연결되고, 제1및 제2gm증폭단 각각의 정(+) 및 부(-) 입력단은 접지되어 있으며, 상기 연결된 제1및 제2gm증폭단은 직류 제어 입력 전압을 받아 gm값을 연동으로 변화시켜 대응 가변 주파수 신호를 제2gm증폭단이 출력하도록 한 것을 특징으로 하는 가변 주파수 발진 회로.
  2. 제2항에 있어서, 상기 부성저항회로는 이 회로가 갖는 기준전류 공급부의 제1기준전류(I1)를 받는 트랜지스터(Qs2), (Qs3)과, 제2기준전류(I2)를 받는 트랜지스터(Qs1), (Qs4)는 트랜지스터(As3)와, (Qs4)의 에미터에 연결된 각각의 저항(R3)및(R4)가 서로 연결되는 접점에 바이어스용 트랜지스터(Qs5)와 저항(Ra)이 연결되고, 상기 트랜지스터(Qs1)과 (Qs2)의 각각의 에미터에 연결된 각각의 저항(R1)및 (R2)가 서로 연결되는 접점에 바이어스용 트랜지스터(Qs6)과 저항(R5)가 연결되며, 트랜지스터(Qs3)의 베이스는 트랜지스터(Qs1)의 콜렉터(노드Nz)에 연결되어 노드(N2)의 전압(Vzin)과 전류는 부저항 특성 관계를 갖도록 구성된 것을 특징으로 하는 가변 주파수 발진 회로.
  3. 제2항에 있어서, 각각의 기준전류(I1), (I2)를 공급하는 기준 전류 공급부의 각각의 저항(R7), (R5)이 전원 공급에 연결되고 이 저항 각각에 연결된 각각의 트랜지스터(Qs7), (Qs8)는 기준전류(Iref1)를 흘리는 트랜지스터(Q40)과 전류미러를 구성하여 상기 기준전류(I1), (I2)는 동일한 크기로 출력됨을 특징으로 하는 가변 주파수 발진 회로.
  4. 제2항 및 제3항에 있어서, 상기의 저항은 R1=R2〉R3=R4및 R6〉R8,R6〉R5인 관계로 설정됨을 특징으로 하는 가변 주파수 발진회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920000161A 1992-01-08 1992-01-08 가변 주파수 발진 회로 KR940007972B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019920000161A KR940007972B1 (ko) 1992-01-08 1992-01-08 가변 주파수 발진 회로
GB9300108A GB2263207B (en) 1992-01-08 1993-01-05 Voltage controlled oscillator provided with negative feedback biasing
JP5000319A JP2588823B2 (ja) 1992-01-08 1993-01-05 可変周波数発振回路
DE4300258A DE4300258B4 (de) 1992-01-08 1993-01-07 Schwingkreisschaltung mit variabler Frequenz
US08/002,266 US5343170A (en) 1992-01-08 1993-01-08 Voltage controlled oscillator provided with negative feedback biasing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920000161A KR940007972B1 (ko) 1992-01-08 1992-01-08 가변 주파수 발진 회로

Publications (2)

Publication Number Publication Date
KR930017289A true KR930017289A (ko) 1993-08-30
KR940007972B1 KR940007972B1 (ko) 1994-08-31

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Application Number Title Priority Date Filing Date
KR1019920000161A KR940007972B1 (ko) 1992-01-08 1992-01-08 가변 주파수 발진 회로

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US (1) US5343170A (ko)
JP (1) JP2588823B2 (ko)
KR (1) KR940007972B1 (ko)
DE (1) DE4300258B4 (ko)
GB (1) GB2263207B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6327465B1 (en) 1998-12-02 2001-12-04 Micron Technology, Inc. Voltage tunable active inductorless filter
US6107893A (en) * 1998-12-02 2000-08-22 Micron Technology, Inc. Voltage tunable active inductorless oscillator
US6208215B1 (en) * 1999-01-14 2001-03-27 National Semiconductor Corp. VCO and filter controlled by common integrated thermal frequency reference
GB2404795B (en) * 2003-08-04 2006-05-17 Seiko Epson Corp Power converter circuit and method for power conversion
US7760040B2 (en) * 2006-01-20 2010-07-20 Sirf Technology, Inc. Method of eliminating temperature induced band switching in ultra wideband voltage controlled oscillator
US8937511B2 (en) 2011-11-22 2015-01-20 Marvell World Trade Ltd. Frequency scaling of variable speed systems for fast response and power reduction
US9013903B2 (en) * 2012-02-07 2015-04-21 Fairchild Semiconductor Corporation High side driver circuitry
US8917146B1 (en) * 2014-02-18 2014-12-23 King Fahd University Of Petroleum And Minerals Current-controlled operational transconductance amplifier based sinusoidal oscillator circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797207A (en) * 1980-12-09 1982-06-16 Fujitsu Ltd Microwave oscillator
GB2147754A (en) * 1983-10-07 1985-05-15 Philips Electronic Associated Frequency multiplying circuit
JP2519703B2 (ja) * 1987-02-04 1996-07-31 株式会社東芝 発振回路
JPS6482702A (en) * 1987-09-24 1989-03-28 Murata Manufacturing Co Microwave oscillating circuit
US4760353A (en) * 1988-01-04 1988-07-26 Motorola, Inc. Integrated gyrator oscillator

Also Published As

Publication number Publication date
JP2588823B2 (ja) 1997-03-12
GB2263207A (en) 1993-07-14
GB9300108D0 (en) 1993-03-03
US5343170A (en) 1994-08-30
JPH0685541A (ja) 1994-03-25
KR940007972B1 (ko) 1994-08-31
GB2263207B (en) 1996-02-21
DE4300258B4 (de) 2006-02-09
DE4300258A1 (ko) 1993-07-15

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