KR930015144A - Solar cell manufacturing method - Google Patents

Solar cell manufacturing method Download PDF

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Publication number
KR930015144A
KR930015144A KR1019910024989A KR910024989A KR930015144A KR 930015144 A KR930015144 A KR 930015144A KR 1019910024989 A KR1019910024989 A KR 1019910024989A KR 910024989 A KR910024989 A KR 910024989A KR 930015144 A KR930015144 A KR 930015144A
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KR
South Korea
Prior art keywords
layer
doping
electrode
solar cell
present
Prior art date
Application number
KR1019910024989A
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Korean (ko)
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KR100204916B1 (en
Inventor
남효진
Original Assignee
이헌조
주식회사 금성사
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Priority to KR1019910024989A priority Critical patent/KR100204916B1/en
Publication of KR930015144A publication Critical patent/KR930015144A/en
Application granted granted Critical
Publication of KR100204916B1 publication Critical patent/KR100204916B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Abstract

본 발명은 태양 전지의 제조방법에 관한 것으로서 단파장의 흡수 특성을 향상시키고 접촉 저항을 감소하여 전자-정공 쌍의 재결합을 방지하여 효율을 증대시키는 데 적합한 것이다.The present invention relates to a method for manufacturing a solar cell, and is suitable for improving efficiency by improving absorption characteristics of short wavelengths and reducing contact resistance to prevent recombination of electron-hole pairs.

종래에는 n+층(2)의 두께가 얇아 전극으로 인해 n+층(2)이 파괴되고 TiO2반사 방지막층(3)을 전극이 뚫고 통고하여 접촉저항이 증가하였으며, 후면에는 전자-정공쌍의 재결합이 발생되는 문제점이 있었으나, 본 발명은 전면 전극부를 두번 도핑하여 전극의 접촉 저항을 감소시켜 도핑층의 파괴를 방지하고 전극 이외 부분은 한번 도핑하여 단파장광 흡수 특성을 증가시켰으며 전후면에 SiO2로 무저항층(10)을 형성하여 표면에서 전자-정공쌍의 재결합을 방지하였으며 후면에 BSF를 형성하여 전자의 역류를 방지함으로서 태양전지의 효율을 증대시키도록 한 것이다.Conventionally, since the thickness of n + layer 2 is thin, the n + layer 2 is destroyed due to the electrode, and the contact resistance is increased by the electrode passing through the TiO 2 anti-reflective coating layer 3, and the electron-hole pair is located on the back side. However, the present invention has a problem of recombination of the present invention. However, the present invention reduces the contact resistance of the electrode by doping the front electrode twice to prevent breakage of the doping layer, and doping the non-electrode once to increase short wavelength light absorption characteristics. The resistivity layer 10 was formed of SiO 2 to prevent recombination of electron-hole pairs on the surface, and BSF was formed on the rear surface to prevent backflow of electrons to increase efficiency of the solar cell.

Description

태양 전지 제조 방법Solar cell manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 태양 전지 제조 공정을 나타낸 단면도.2 is a cross-sectional view showing a solar cell manufacturing process according to the present invention.

Claims (2)

코팅된 P형 웨이퍼(9)를 텍스츄어 에칭하는 제1공정과, 텍스츄어 에칭된 P형 웨이퍼(9)를 인이 함유된 고체소스를 이용하여 n+층(9)을 도핑하는 제2공정과, 표면 재결합 방지를 위하여 상기 n+층(9)이 도핑된 실리콘 웨이퍼(8)를 건식 산화한 후 약 100A의 두께를 갖는 SiO2무저항층(10)을 형성하는 제3공정과, 반사 방지를 위하여 Si3N4층(11)을 증착하는 제4공정과, 전면을 레이저로 그루빙하여 도핑하고 그루빙핀 부분은 약 1㎛정도의 도핑층을 갖도록 하는 제5공정과, 후면을 레이저로 구루빙하고 알미늄 페이스트로 스크린 프리팅 한후 열처리하여 부분적인 P++도핑층(13)과 알미늄층(14)이 형성된 BSF층을 형성하는 제6공정과, 레이저 그루빙된 부분을 Ag페이스로 스크린 프린팅 한후 열처리하여 전후면 전극(15)(16)을 형성하는 제7공정순으로 제조됨을 특징으로 하는 태양전지의 제조방법.A first process of texture etching the coated P-type wafer 9, a second process of doping the n + layer 9 by using a solid source containing phosphorus in the texture-etched P-type wafer 9, A third step of forming a SiO 2 resistivity layer 10 having a thickness of about 100 A after dry oxidation of the silicon wafer 8 doped with the n + layer 9 to prevent surface recombination, and to prevent reflection A fourth step of depositing the Si 3 N 4 layer 11, a fifth step of grooving the front side with a laser and having a doping layer of about 1 μm, and a grooving the back side with a laser Screen-printing with aluminum paste, followed by heat treatment to form a BSF layer having a partial P ++ doping layer 13 and aluminum layer 14 formed thereon, and screen printing the laser grooved portion with an Ag face. Heat treatment to manufacture the front and rear electrodes (15, 16) in the seventh process order The manufacturing method of the solar cell. 제1항에 있어서, 제2공정은 860℃에서 20분간 도핑하여 약 0.2㎛의 n+층(9)을 형성함을 특징으로 하는 태양전지의 제조방법.The method of claim 1, wherein the second step of doping at 860 ° C. for 20 minutes forms an n + layer of about 0.2 μm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910024989A 1991-12-30 1991-12-30 Manufacturing method of solar cell KR100204916B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910024989A KR100204916B1 (en) 1991-12-30 1991-12-30 Manufacturing method of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024989A KR100204916B1 (en) 1991-12-30 1991-12-30 Manufacturing method of solar cell

Publications (2)

Publication Number Publication Date
KR930015144A true KR930015144A (en) 1993-07-23
KR100204916B1 KR100204916B1 (en) 1999-06-15

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ID=19326526

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Application Number Title Priority Date Filing Date
KR1019910024989A KR100204916B1 (en) 1991-12-30 1991-12-30 Manufacturing method of solar cell

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416740B1 (en) * 1997-02-17 2004-05-17 삼성전자주식회사 Method for fabricating rear locally sintered silicon solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416740B1 (en) * 1997-02-17 2004-05-17 삼성전자주식회사 Method for fabricating rear locally sintered silicon solar cell

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Publication number Publication date
KR100204916B1 (en) 1999-06-15

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