JPS62237765A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS62237765A
JPS62237765A JP61079934A JP7993486A JPS62237765A JP S62237765 A JPS62237765 A JP S62237765A JP 61079934 A JP61079934 A JP 61079934A JP 7993486 A JP7993486 A JP 7993486A JP S62237765 A JPS62237765 A JP S62237765A
Authority
JP
Japan
Prior art keywords
solar cell
junction
printing
rough
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61079934A
Other languages
Japanese (ja)
Other versions
JP2555023B2 (en
Inventor
Yasuhiro Kida
康博 木田
Koichi Suda
晃一 須田
Kunihiro Matsukuma
邦浩 松熊
Keiichi Morita
守田 啓一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61079934A priority Critical patent/JP2555023B2/en
Publication of JPS62237765A publication Critical patent/JPS62237765A/en
Application granted granted Critical
Publication of JP2555023B2 publication Critical patent/JP2555023B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent the junction of a solar cell from damaging by flattening the electrode forming portion of the cell in which a photodetecting surface is rough. CONSTITUTION:An etching resist 2 is formed by printing in coincidence with a texture-etching surface electrode pattern with a P-type silicon substrate 1, and mirror-etched to form a flat surface. After an N<+> type layer 3 is formed by diffusing POCl8 to form a P-N junction J1, aluminum paste is printed on the back surface, a P-P' junction J2 is formed by heat treating at 700 deg.C for 5 min to obtain an N'-P-P' junction configuration. Front and back surface electrodes 5, 6 are formed by printing Ga paste and heat treating and solder 7 is dipped to form a solar cell.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、受光面が粗面である太陽電池に係り。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a solar cell having a rough light-receiving surface.

素子の開放電圧、曲線因子の向上に好適な太陽電池に関
する。
The present invention relates to a solar cell suitable for improving the open circuit voltage and fill factor of a device.

〔発明の背景〕[Background of the invention]

従来の太陽電池としては、特開昭48−32946号公
報にあるように、受光面を粗面としたものがあるが、こ
の粗面に電極を形成していたため、電極形成時に接合を
破壊して、開放電圧、曲線因子を低下させる問題があっ
た。
Some conventional solar cells have roughened light-receiving surfaces, as described in Japanese Patent Application Laid-open No. 48-32946, but since electrodes were formed on this rough surface, the bonding could be broken when the electrodes were formed. Therefore, there was a problem of lowering the open circuit voltage and fill factor.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、受光面が粗面である太陽電池において
、接合破壊を防止することができる高効率な太陽電池を
提供することにある。
An object of the present invention is to provide a highly efficient solar cell in which junction breakdown can be prevented in a solar cell having a rough light-receiving surface.

〔発明の概要〕[Summary of the invention]

高効率太陽電池を得るための主要因として、入射光の受
光面反射の低減が上げられる。その−例として受光面を
粗面とし受光損失を低減させるような素子構造がある。
The main factor for obtaining high-efficiency solar cells is reducing the reflection of incident light on the light-receiving surface. An example of this is an element structure in which the light-receiving surface is roughened to reduce light-receiving loss.

さらに、前述した粗面を得るためには、(100)基板
に対する(111)面の選択エツチング(テクスチャー
エツチング)を行ない、基板表面に無数の四角錐を形成
するのが一般的である。しかし、太陽電池の製造におい
・て、テクスチャーエツチング後基板にpn接合を形成
し、受光面電極を印刷により形成する際、前述した四角
錐の先端が欠け、接合破壊を越し、飽和電池の増加によ
り、開放電圧、曲線因子を低下させていた。
Furthermore, in order to obtain the above-mentioned rough surface, it is common to perform selective etching (texture etching) of the (111) plane on the (100) substrate to form countless square pyramids on the substrate surface. However, in the production of solar cells, when a pn junction is formed on the substrate after texture etching and a light-receiving surface electrode is formed by printing, the tips of the square pyramids mentioned above are chipped, the junction is broken, and the number of saturated cells increases. , open circuit voltage, and fill factor were reduced.

本発明は、受光面が粗面である太陽電池の電極形成部を
平坦面とすることにより、前述した影響を防止可能とし
たものである。
The present invention makes it possible to prevent the above-mentioned effects by making the electrode formation portion of a solar cell with a rough light-receiving surface a flat surface.

〔発明の実施例〕[Embodiments of the invention]

本発明の一実施例を第1図により製造工程に従って説明
する。
An embodiment of the present invention will be explained according to the manufacturing process with reference to FIG.

第1図(a)に示すように、P型シリコン基板((10
0)、ρ=1〜1.5Ω・(2)) 1を用い、第1図
(b)のように水酸化カリウムを3〜4%含む水溶液(
75℃に加熱)に30分浸漬しテクスチャーエツチング
を行なう。次に、表面電極パターンに合わせてエツチン
グレジスト2を印刷形成し、表面電極形成部をHF /
 HN Oa = 1 / 5液にてミラーエツチング
を行ない、平坦面を得る(第1図(c)〜(d))、さ
らに、第1図(e)に示すようにPOCQs拡散により
n十層3を形成してp−n接合J1を形成後、第1図(
f)のように裏面へのAQペースト印刷後、700℃。
As shown in FIG. 1(a), a P-type silicon substrate ((10
0), ρ = 1-1.5Ω・(2)) 1, an aqueous solution containing 3-4% potassium hydroxide (
texture etching. Next, an etching resist 2 is printed to match the surface electrode pattern, and the surface electrode forming area is formed using HF/
Mirror etching is performed using HN Oa = 1/5 solution to obtain a flat surface (Fig. 1(c) to (d)).Furthermore, as shown in Fig. 1(e), an n0 layer 3 is formed by POCQs diffusion. After forming p-n junction J1 by forming
After printing AQ paste on the back side as in f), 700°C.

5分の熱処理により、p−p◆接合Jzを形成し、n+
−p−p+の接合構成を得る。以後、第1図(g)に示
すごと<Arcペースト印刷、熱処理により、表裏電極
5,6を形成し、半田7をディップ後太陽電池を得る。
By heat treatment for 5 minutes, p-p◆junction Jz is formed, and n+
- Obtain a p-p+ junction configuration. Thereafter, as shown in FIG. 1(g), front and back electrodes 5 and 6 are formed by Arc paste printing and heat treatment, and after dipping solder 7, a solar cell is obtained.

下表に、従来例との特性比較を示す。The table below shows a comparison of characteristics with conventional examples.

第  1  表 注)反射防止膜なし 実施例太陽電池の特性は、従来例に比べ、開放電圧、曲
線因子で改善が見られ、本発明が、粗面を有する太陽電
池に対して、好適な構造であるという結果を示した。
Table 1 Note: The characteristics of the example solar cell without an antireflection film are improved in open circuit voltage and fill factor compared to the conventional example, and the present invention has a structure suitable for solar cells with rough surfaces. The results showed that.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、受光面が粗面である太y!に電池の電
極形成部を平坦面とすることにより、電極形成時に、接
合破壊を防止でき、高効率な太陽電池を得る効果がある
According to the present invention, the light-receiving surface is a rough surface! In addition, by forming the electrode forming portion of the battery into a flat surface, it is possible to prevent bond breakdown during electrode formation, and this has the effect of obtaining a highly efficient solar cell.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(g)は本発明太陽電池の一実施例をそ
の製造工程に沿って説明する断面図である。 1・・・ρ型基板、2・・・レジスト、3・・・n十層
、4・・・P十層、5・・・受光面電極、6・・・裏面
電極、7・・・半面。
FIGS. 1(a) to 1(g) are cross-sectional views illustrating an embodiment of the solar cell of the present invention along its manufacturing process. DESCRIPTION OF SYMBOLS 1... ρ type substrate, 2... Resist, 3... N ten layers, 4... P ten layers, 5... Light-receiving surface electrode, 6... Back surface electrode, 7... Half surface .

Claims (1)

【特許請求の範囲】[Claims] 1、受光面が粗面であるn^+−p−p^+接合型太陽
電池において、電極形成部のみ平坦面となつていること
を特徴とする太陽電池。
1. A solar cell characterized in that in an n^+-p-p^+ junction solar cell whose light-receiving surface is a rough surface, only the electrode forming portion is a flat surface.
JP61079934A 1986-04-09 1986-04-09 Solar cell Expired - Fee Related JP2555023B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61079934A JP2555023B2 (en) 1986-04-09 1986-04-09 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61079934A JP2555023B2 (en) 1986-04-09 1986-04-09 Solar cell

Publications (2)

Publication Number Publication Date
JPS62237765A true JPS62237765A (en) 1987-10-17
JP2555023B2 JP2555023B2 (en) 1996-11-20

Family

ID=13704146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61079934A Expired - Fee Related JP2555023B2 (en) 1986-04-09 1986-04-09 Solar cell

Country Status (1)

Country Link
JP (1) JP2555023B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992005587A1 (en) * 1990-09-24 1992-04-02 Mobil Solar Energy Corporation Electrical contacts and method of manufacturing same
KR100446593B1 (en) * 1997-03-05 2005-07-04 삼성전자주식회사 Silicon solar cell and its manufacturing method
WO2005083799A1 (en) * 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
CN101931029A (en) * 2009-06-18 2010-12-29 Lg电子株式会社 The method of solar cell and manufacturing solar cell
JP2015515747A (en) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーImec Vzw Method for manufacturing a solar cell having plated contacts

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169178A (en) * 1984-09-13 1986-04-09 Toshiba Corp Manufacture of solar cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169178A (en) * 1984-09-13 1986-04-09 Toshiba Corp Manufacture of solar cell

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992005587A1 (en) * 1990-09-24 1992-04-02 Mobil Solar Energy Corporation Electrical contacts and method of manufacturing same
US5118362A (en) * 1990-09-24 1992-06-02 Mobil Solar Energy Corporation Electrical contacts and methods of manufacturing same
KR100446593B1 (en) * 1997-03-05 2005-07-04 삼성전자주식회사 Silicon solar cell and its manufacturing method
WO2005083799A1 (en) * 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
CN101931029A (en) * 2009-06-18 2010-12-29 Lg电子株式会社 The method of solar cell and manufacturing solar cell
JP2015515747A (en) * 2012-03-14 2015-05-28 アイメック・ヴェーゼットウェーImec Vzw Method for manufacturing a solar cell having plated contacts

Also Published As

Publication number Publication date
JP2555023B2 (en) 1996-11-20

Similar Documents

Publication Publication Date Title
JP4818544B2 (en) Solar cell and manufacturing method thereof
US20170077321A1 (en) Solar cell element, method for manufacturing solar cell element and solar cell module
JP2008204967A (en) Solar cell element and method for fabricating the same
JPS6215864A (en) Manufacture of solar cell
JP2007266262A (en) Solar cell with interconnector, solar cell module, and method for manufacturing solar cell module
JP6525583B2 (en) Solar cell element and solar cell module
US9691918B2 (en) Solar battery cell and manufacturing method for the solar battery cell
WO2016068237A1 (en) Solar cell module
JP2013143459A (en) Slim-type silicon solar battery cell
JP2989373B2 (en) Method for manufacturing photoelectric conversion device
JP2010010493A (en) Solar cell and method of manufacturing the same
JP2951061B2 (en) Solar cell manufacturing method
TWI650872B (en) Solar cell and its manufacturing method, solar cell module and solar cell power generation system
JPS62237765A (en) Solar cell
KR100420030B1 (en) Method for manufacturing solar cell
JP3073833B2 (en) Solar cell manufacturing method
JP3676954B2 (en) Photoelectric conversion element and manufacturing method thereof
CN109041583B (en) Solar cell element and solar cell module
JP2004235272A (en) Solar cell element and its fabricating process
US11984522B2 (en) High-efficiency backside contact solar cell and method for manufacturing thereof
JP2005136062A (en) Manufacturing method of solar battery
JP4212292B2 (en) Solar cell and manufacturing method thereof
JPS62108579A (en) Manufacture of solar cell
JPS5810872A (en) Manufacture of solar battery
JP3352586B2 (en) Method of manufacturing solar cell

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R370 Written measure of declining of transfer procedure

Free format text: JAPANESE INTERMEDIATE CODE: R370

LAPS Cancellation because of no payment of annual fees