JPS62237765A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPS62237765A JPS62237765A JP61079934A JP7993486A JPS62237765A JP S62237765 A JPS62237765 A JP S62237765A JP 61079934 A JP61079934 A JP 61079934A JP 7993486 A JP7993486 A JP 7993486A JP S62237765 A JPS62237765 A JP S62237765A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- junction
- printing
- rough
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、受光面が粗面である太陽電池に係り。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a solar cell having a rough light-receiving surface.
素子の開放電圧、曲線因子の向上に好適な太陽電池に関
する。The present invention relates to a solar cell suitable for improving the open circuit voltage and fill factor of a device.
従来の太陽電池としては、特開昭４８−３２９４６号公
報にあるように、受光面を粗面としたものがあるが、こ
の粗面に電極を形成していたため、電極形成時に接合を
破壊して、開放電圧、曲線因子を低下させる問題があっ
た。Some conventional solar cells have roughened light-receiving surfaces, as described in Japanese Patent Application Laid-open No. 48-32946, but since electrodes were formed on this rough surface, the bonding could be broken when the electrodes were formed. Therefore, there was a problem of lowering the open circuit voltage and fill factor.
本発明の目的は、受光面が粗面である太陽電池において
、接合破壊を防止することができる高効率な太陽電池を
提供することにある。An object of the present invention is to provide a highly efficient solar cell in which junction breakdown can be prevented in a solar cell having a rough light-receiving surface.
高効率太陽電池を得るための主要因として、入射光の受
光面反射の低減が上げられる。その−例として受光面を
粗面とし受光損失を低減させるような素子構造がある。The main factor for obtaining high-efficiency solar cells is reducing the reflection of incident light on the light-receiving surface. An example of this is an element structure in which the light-receiving surface is roughened to reduce light-receiving loss.
さらに、前述した粗面を得るためには、（１００）基板
に対する（１１１）面の選択エツチング（テクスチャー
エツチング）を行ない、基板表面に無数の四角錐を形成
するのが一般的である。しかし、太陽電池の製造におい
・て、テクスチャーエツチング後基板にｐｎ接合を形成
し、受光面電極を印刷により形成する際、前述した四角
錐の先端が欠け、接合破壊を越し、飽和電池の増加によ
り、開放電圧、曲線因子を低下させていた。Furthermore, in order to obtain the above-mentioned rough surface, it is common to perform selective etching (texture etching) of the (111) plane on the (100) substrate to form countless square pyramids on the substrate surface. However, in the production of solar cells, when a pn junction is formed on the substrate after texture etching and a light-receiving surface electrode is formed by printing, the tips of the square pyramids mentioned above are chipped, the junction is broken, and the number of saturated cells increases. , open circuit voltage, and fill factor were reduced.
本発明は、受光面が粗面である太陽電池の電極形成部を
平坦面とすることにより、前述した影響を防止可能とし
たものである。The present invention makes it possible to prevent the above-mentioned effects by making the electrode formation portion of a solar cell with a rough light-receiving surface a flat surface.
本発明の一実施例を第１図により製造工程に従って説明
する。An embodiment of the present invention will be explained according to the manufacturing process with reference to FIG.
第１図（ａ）に示すように、Ｐ型シリコン基板（（１０
０）、ρ＝１〜１．５Ω・（２）） １を用い、第１図
（ｂ）のように水酸化カリウムを３〜４％含む水溶液（
７５℃に加熱）に３０分浸漬しテクスチャーエツチング
を行なう。次に、表面電極パターンに合わせてエツチン
グレジスト２を印刷形成し、表面電極形成部をＨＦ ／
ＨＮ Ｏａ ＝ １ ／ ５液にてミラーエツチング
を行ない、平坦面を得る（第１図（ｃ）〜（ｄ））、さ
らに、第１図（ｅ）に示すようにＰＯＣＱｓ拡散により
ｎ十層３を形成してｐ−ｎ接合Ｊ１を形成後、第１図（
ｆ）のように裏面へのＡＱペースト印刷後、７００℃。As shown in FIG. 1(a), a P-type silicon substrate ((10
0), ρ = 1-1.5Ω・(2)) 1, an aqueous solution containing 3-4% potassium hydroxide (
texture etching. Next, an etching resist 2 is printed to match the surface electrode pattern, and the surface electrode forming area is formed using HF/
Mirror etching is performed using HN Oa = 1/5 solution to obtain a flat surface (Fig. 1(c) to (d)).Furthermore, as shown in Fig. 1(e), an n0 layer 3 is formed by POCQs diffusion. After forming p-n junction J1 by forming
After printing AQ paste on the back side as in f), 700°C.
５分の熱処理により、ｐ−ｐ◆接合Ｊｚを形成し、ｎ＋
−ｐ−ｐ＋の接合構成を得る。以後、第１図（ｇ）に示
すごと＜Ａｒｃペースト印刷、熱処理により、表裏電極
５，６を形成し、半田７をディップ後太陽電池を得る。By heat treatment for 5 minutes, p-p◆junction Jz is formed, and n+
- Obtain a p-p+ junction configuration. Thereafter, as shown in FIG. 1(g), front and back electrodes 5 and 6 are formed by Arc paste printing and heat treatment, and after dipping solder 7, a solar cell is obtained.
下表に、従来例との特性比較を示す。The table below shows a comparison of characteristics with conventional examples.
第 １ 表
注）反射防止膜なし
実施例太陽電池の特性は、従来例に比べ、開放電圧、曲
線因子で改善が見られ、本発明が、粗面を有する太陽電
池に対して、好適な構造であるという結果を示した。Table 1 Note: The characteristics of the example solar cell without an antireflection film are improved in open circuit voltage and fill factor compared to the conventional example, and the present invention has a structure suitable for solar cells with rough surfaces. The results showed that.
本発明によれば、受光面が粗面である太ｙ！に電池の電
極形成部を平坦面とすることにより、電極形成時に、接
合破壊を防止でき、高効率な太陽電池を得る効果がある
。According to the present invention, the light-receiving surface is a rough surface! In addition, by forming the electrode forming portion of the battery into a flat surface, it is possible to prevent bond breakdown during electrode formation, and this has the effect of obtaining a highly efficient solar cell.
第１図（ａ）〜（ｇ）は本発明太陽電池の一実施例をそ
の製造工程に沿って説明する断面図である。
１・・・ρ型基板、２・・・レジスト、３・・・ｎ十層
、４・・・Ｐ十層、５・・・受光面電極、６・・・裏面
電極、７・・・半面。FIGS. 1(a) to 1(g) are cross-sectional views illustrating an embodiment of the solar cell of the present invention along its manufacturing process. DESCRIPTION OF SYMBOLS 1... ρ type substrate, 2... Resist, 3... N ten layers, 4... P ten layers, 5... Light-receiving surface electrode, 6... Back surface electrode, 7... Half surface .
Claims (1)
電池において、電極形成部のみ平坦面となつていること
を特徴とする太陽電池。1. A solar cell characterized in that in an n^+-p-p^+ junction solar cell whose light-receiving surface is a rough surface, only the electrode forming portion is a flat surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61079934A JP2555023B2 (en) | 1986-04-09 | 1986-04-09 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61079934A JP2555023B2 (en) | 1986-04-09 | 1986-04-09 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62237765A true JPS62237765A (en) | 1987-10-17 |
| JP2555023B2 JP2555023B2 (en) | 1996-11-20 |
Family
ID=13704146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61079934A Expired - Fee Related JP2555023B2 (en) | 1986-04-09 | 1986-04-09 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2555023B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992005587A1 (en) * | 1990-09-24 | 1992-04-02 | Mobil Solar Energy Corporation | Electrical contacts and method of manufacturing same |
| KR100446593B1 (en) * | 1997-03-05 | 2005-07-04 | 삼성전자주식회사 | Silicon solar cell and its manufacturing method |
| WO2005083799A1 (en) * | 2004-02-24 | 2005-09-09 | Bp Corporation North America Inc | Process for manufacturing photovoltaic cells |
| CN101931029A (en) * | 2009-06-18 | 2010-12-29 | Lg电子株式会社 | The method of solar cell and manufacturing solar cell |
| JP2015515747A (en) * | 2012-03-14 | 2015-05-28 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | Method for manufacturing a solar cell having plated contacts |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169178A (en) * | 1984-09-13 | 1986-04-09 | Toshiba Corp | Manufacture of solar cell |
-
1986
- 1986-04-09 JP JP61079934A patent/JP2555023B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169178A (en) * | 1984-09-13 | 1986-04-09 | Toshiba Corp | Manufacture of solar cell |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992005587A1 (en) * | 1990-09-24 | 1992-04-02 | Mobil Solar Energy Corporation | Electrical contacts and method of manufacturing same |
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| KR100446593B1 (en) * | 1997-03-05 | 2005-07-04 | 삼성전자주식회사 | Silicon solar cell and its manufacturing method |
| WO2005083799A1 (en) * | 2004-02-24 | 2005-09-09 | Bp Corporation North America Inc | Process for manufacturing photovoltaic cells |
| CN101931029A (en) * | 2009-06-18 | 2010-12-29 | Lg电子株式会社 | The method of solar cell and manufacturing solar cell |
| JP2015515747A (en) * | 2012-03-14 | 2015-05-28 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | Method for manufacturing a solar cell having plated contacts |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2555023B2 (en) | 1996-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
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| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
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| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
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| R370 | Written measure of declining of transfer procedure |
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| LAPS | Cancellation because of no payment of annual fees |