JP2555023B2 - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JP2555023B2 JP2555023B2 JP61079934A JP7993486A JP2555023B2 JP 2555023 B2 JP2555023 B2 JP 2555023B2 JP 61079934 A JP61079934 A JP 61079934A JP 7993486 A JP7993486 A JP 7993486A JP 2555023 B2 JP2555023 B2 JP 2555023B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- rough
- receiving surface
- light
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、受光面が粗面である太陽電池に係り、素子
の開放電圧、曲線因子の向上に好適な太陽電池に関す
る。Description: TECHNICAL FIELD The present invention relates to a solar cell having a rough light-receiving surface, and relates to a solar cell suitable for improving the open circuit voltage and fill factor of an element.
従来の太陽電池としては、特開昭48−32946号公報に
あるように、受光面を粗面としたものがあるが、この粗
面に電極を形成していたため、電極形成時に接合を破壊
して、開放電圧、曲線因子を低下させる問題があつた。As a conventional solar cell, there is one in which a light-receiving surface is rough as described in JP-A-48-32946.However, since the electrodes are formed on this rough surface, the junction is destroyed when the electrodes are formed. Therefore, there is a problem that the open circuit voltage and the fill factor are lowered.
〔発明の目的〕 本発明の目的は、受光面が粗面である太陽電池におい
て、接合破壊を防止することができる高効率な太陽電池
を提供することにある。[Object of the Invention] An object of the present invention is to provide a highly efficient solar cell capable of preventing junction breakdown in a solar cell having a rough light-receiving surface.
高効率太陽電池を得るための主要因として、入射光の
受光面反射の低減が上げられる。その一例として受光面
を粗面とし受光損失を低減させるような素子構造があ
る。さらに、前述した粗面を得るためには、（100）基
板に対する（111）面の選択エツチング（テクスチヤー
エツチング）を行ない、基板表面に無数の四角錐を形成
するのが一般的である。しかし、太陽電池の製造におい
て、テクスチヤーエツチング後基板にpn接合を形成し、
受光面電極を印刷により形成する際、前述した四角錐の
先端が欠け、接合破壊を越し、飽和電池の増加により、
開放電圧、曲線因子を低下させていた。The main factor for obtaining a high-efficiency solar cell is the reduction of the reflection of the incident light on the light-receiving surface. As an example thereof, there is an element structure in which the light receiving surface is rough and the light receiving loss is reduced. Further, in order to obtain the above-mentioned rough surface, it is general that selective etching (texture etching) of the (111) plane with respect to the (100) substrate is performed to form innumerable quadrangular pyramids. However, in the manufacture of solar cells, a pn junction is formed on the substrate after texture etching,
When the light-receiving surface electrode is formed by printing, the tip of the above-mentioned quadrangular pyramid is chipped, the junction is destroyed, and the number of saturated batteries increases.
The open circuit voltage and fill factor were reduced.
本発明は、受光面が粗面である太陽電池の電極形成部
を平坦面とすることにより、前述した影響を防止可能と
したものである。The present invention makes it possible to prevent the above-mentioned influence by making the electrode forming portion of the solar cell having a rough light receiving surface a flat surface.
本発明の一実施例を第１図により製造工程に従つて説
明する。One embodiment of the present invention will be described with reference to FIG.
第１図（ａ）に示すように、ｐ型シリコン基板（（10
0），ρ＝１〜1.5Ω・cm）１を用い、第１図（ｂ）のよ
うに水酸化カリウムを３〜４％含む水溶液（75℃に加
熱）に30分浸漬しテクスチヤーエツチングを行なう。次
に、表面電極パターンに合わせてエツチングレジスト２
を印刷形成し、表面電極形成部をHF/HNO3＝1/5液にてミ
ラーエツチングを行ない、平坦面を得る（第１図（ｃ）
〜（ｄ））。さらに、第１図（ｅ）に示すようにPOCl3
拡散によりn+層３を形成してｐ−ｎ接合J1を形成後、第
１図（ｆ）のように裏面へのAlペースト印刷後、700℃,
5分間の熱処理により、ｐ−p+接合J2を形成し、n+−ｐ
−p+の接合構成を得る。以後、第１図（ｇ）に示すごと
くAgペースト印刷、熱処理により、表裏電極5,6を形成
し、半田７をデイツプ後太陽電池を得る。下表に、従来
例との特性比較を示す。As shown in FIG. 1 (a), a p-type silicon substrate ((10
0), ρ = 1 to 1.5 Ω · cm) 1 and immersed in an aqueous solution containing 3 to 4% of potassium hydroxide (heated to 75 ° C) for 30 minutes as shown in Fig. 1 (b) for texture etching. To do. Next, an etching resist 2 is formed according to the surface electrode pattern.
Is printed and the surface electrode formation part is mirror-etched with HF / HNO 3 = 1/5 liquid to obtain a flat surface (Fig. 1 (c)).
~ (D)). Furthermore, as shown in FIG. 1 (e), POCl 3
After forming the n + layer 3 by diffusion to form the pn junction J 1 , after printing the Al paste on the back surface as shown in FIG.
By heat treatment for 5 minutes, pp + junction J 2 is formed and n + -p
Obtain a junction configuration of −p + . Thereafter, as shown in FIG. 1 (g), front and back electrodes 5 and 6 are formed by Ag paste printing and heat treatment, and after solder 7 is dipped, a solar cell is obtained. The table below shows the comparison of characteristics with the conventional example.
実施例太陽電池の特性は、従来例に比べ、開放電圧、
曲線因子で改善が見られ、本発明が、粗面を有する太陽
電池に対して、好適な構造であるという結果を示した。 The characteristics of the solar cells of Examples are as follows:
An improvement was seen in the fill factor, indicating that the present invention is a suitable structure for solar cells having a rough surface.
本発明によれば、受光面が粗面である太陽電池の電極
形成部を平坦面とすることにより、電極形成時に、接合
破壊を防止でき、高効率な太陽電池を得る効果がある。According to the present invention, by making the electrode forming portion of the solar cell having a rough light receiving surface a flat surface, it is possible to prevent junction breakdown during electrode formation and obtain a highly efficient solar cell.
第１図（ａ）〜（ｇ）は本発明太陽電池の一実施例をそ
の製造工程に沿つて説明する断面図である。 １……ｐ型基板、２……レジスト、３……n+層、４……
p+層、５……受光面電極、６……裏面電極、７……半
面。1 (a) to 1 (g) are cross-sectional views illustrating an embodiment of the solar cell of the present invention along with its manufacturing process. 1 ... p-type substrate, 2 ... resist, 3 ... n + layer, 4 ...
p + layer, 5 ... light receiving surface electrode, 6 ... back surface electrode, 7 ... half surface.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 守田 啓一 日立市幸町３丁目１番１号 株式会社日 立製作所日立工場内 (56)参考文献 特開 昭61−69178（ＪＰ，Ａ) 特開 昭56−148875（ＪＰ，Ａ) 特開 昭51−150287（ＪＰ，Ａ) ─────────────────────────────────────────────────── --- Continuation of the front page (72) Inventor Keiichi Morita 3-1-1, Saiwaicho, Hitachi City Inside the Hitachi factory, Hiritsu Manufacturing Co., Ltd. (56) Reference JP-A-61-69178 (JP, A) JP 56-148875 (JP, A) JP-A-51-150287 (JP, A)
Claims (1)
電池において、該受光面における電極形成部の半導体表
面が平坦面となっていることを特徴とする太陽電池。1. A solar cell, characterized in that the n + -p-n + junction solar cell light-receiving surface is a rough surface, the semiconductor surface of the electrode forming portions of the light receiving surface is a flat surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61079934A JP2555023B2 (en) | 1986-04-09 | 1986-04-09 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61079934A JP2555023B2 (en) | 1986-04-09 | 1986-04-09 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62237765A JPS62237765A (en) | 1987-10-17 |
| JP2555023B2 true JP2555023B2 (en) | 1996-11-20 |
Family
ID=13704146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61079934A Expired - Fee Related JP2555023B2 (en) | 1986-04-09 | 1986-04-09 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2555023B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| KR100446593B1 (en) * | 1997-03-05 | 2005-07-04 | 삼성전자주식회사 | Silicon solar cell and its manufacturing method |
| EP1730788A1 (en) * | 2004-02-24 | 2006-12-13 | BP Corporation North America Inc. | Process for manufacturing photovoltaic cells |
| KR101139458B1 (en) * | 2009-06-18 | 2012-04-30 | 엘지전자 주식회사 | Sollar Cell And Fabrication Method Thereof |
| EP2826072B1 (en) * | 2012-03-14 | 2019-07-17 | IMEC vzw | Method for fabricating photovoltaic cells with plated contacts |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169178A (en) * | 1984-09-13 | 1986-04-09 | Toshiba Corp | Manufacture of solar cell |
-
1986
- 1986-04-09 JP JP61079934A patent/JP2555023B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62237765A (en) | 1987-10-17 |
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Legal Events
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| LAPS | Cancellation because of no payment of annual fees |