KR930011282A - Single Polycrystalline Silicon Bipolar Device Structure and Fabrication Method with Self-aligned Silicide Electrode - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bipolar device structure and a manufacturing method used in a system requiring high-speed processing of information. The structure of a conventional bipolar device includes an emitter polycrystalline silicon having a sidewall nitride film for defining trench isolation regions between polycrystalline silicon electrodes. Defining the inside of the electrode has two problems in terms of process reliability.

Firstly, the base bonding is performed by the simultaneous implantation of boron to form the non-uniform activity of the base-collector junction depth by boron back oxidation in the polycrystalline silicon and the formation of the inactive base region during the growth of the polycrystalline silicon oxide layer for the selective dry etching of P + polycrystalline silicon. Control of depth and impurity distribution becomes difficult.

Secondly, the prior definition of P + polycrystalline silicon, which determines the overall size of the device, makes it difficult to determine the etching end point during dry etching of polycrystalline silicon for electrical isolation between electrodes.

In addition, the necking process of the trench isolation region by the deposition oxide may damage the surface of the polycrystalline silicon emitter. The present invention forms a side nitride film for defining the trench isolation region between each polycrystalline silicon electrode on the outside of the emitter polycrystalline silicon electrode, thereby facilitating the determination of etch termination of the polycrystalline silicon, and on the emitter polycrystalline silicon electrode. The use of a nitride film and N + polycrystalline silicon facilitates the climax of the dry etching end point of the deposited oxide film for the recovery of the trench isolation region and the control of the impurity distribution in the base region, and the selective suicide of the silicide on the polycrystalline silicon electrode. Through improving the structural scale, the process reliability and the performance of the bipolar device are improved.

Description

Single Polycrystalline Silicon Bipolar Device Structure and Fabrication Method with Self-aligned Silicide Electrode

Since this is an open matter, no full text was included.

2 is a cross-sectional view of a single polycrystalline silicon bipolar device completed in accordance with the present invention.

(A)-(f) of FIG. 3 is a manufacturing process chart of the single polycrystal silicon bipolar element by this invention.

Claims (5)

The sidewall nitride film 5 for defining the trench isolation region between the polycrystalline silicon electrodes 25, 26, and 27 is placed on the emitter polycrystalline silicon electrode 26 with the nitride film 22 and the N + single crystal silicon 4; To facilitate the determination of the end point of dry etching of the deposited oxide film for the recovery of the trench isolation region 12 and the control of the impurity distribution in the base region 17 and also the polysilicon emitter, base, collector electrode 25 A single polycrystalline silicon bipolar with self-aligned silicide electrode characterized by minimizing the parasitic resistance component of the device through structural improvements in which the silicide 18 is selectively self-aligned on, (26), (27). device. In order to protect the device isolation oxide film 23, a nitride film 22 is formed on the oxide film 23, and polycrystalline silicon 1 is deposited on the nitride film 22 to form an emitter, a base, and a collector electrode. (1) grow a full polycrystalline silicon oxide film (2) in a dry oxygen atmosphere to protect the surface of the polycrystalline silicon emitter and provide an end point of wet etching of the N + polycrystalline silicon (4) to 3) depositing and depositing N + polycrystalline silicon (4) on the nitride film (3) for the protection and etching end point of the nitride film (3) during dry etching of the deposited oxide film, the first step and selectively dry etching the polycrystalline silicon The second step of defining the overall size of the device by the photolithography method by growing an oxide film 6 on the polycrystalline silicon (1), (4), the trench isolation region 7 between each electrode and the polycrystalline silicon electrode ( 8), (9), (10) A third step of simultaneously forming and removing the polycrystalline silicon oxide film 6 and implanting the oxide film 11 and boron ions in a dry oxygen powder to form a P + connection between the inactive and active base regions and a trench season region; Deposition of a low temperature deposition oxide film and dry etching until the surfaces of the N + single crystal silicon 4 and the base polycrystalline silicon 8 are exposed to form a trench isolation oxide film 12, and then remove the N + polycrystalline silicon 4, and then doping boron. Thereby forming a P ++ inert base electrode 25, and growing an oxide film 13 on the P ++ base electrode 25 for selective ion implantation of impurities into the emitter polycrystalline silicon 9, thereby forming a trench isolation oxide film and a P ++ base polycrystal. The fourth step of forming a silicon electrode, and after removing the nitride film 3, ion implantation of boron and arsenic, followed by heat treatment in a nitrogen atmosphere to diffuse the layers 14, 15, 16 and 17 of the device. Finally forming the active region of the device, and removing the polycrystalline silicon oxide films (2) and (13), depositing a transition metal, and silicifying the transition metal by heat treatment in a nitrogen atmosphere, followed by a trench. A single polycrystal having a silicide electrode self-aligned by a sixth step of forming a silicide layer and a metal wiring on each of the polycrystalline silicon electrodes 25, 26, and 27 by supporting the transition metal on the isolation oxide film 12 Silicon bipolar device manufacturing method. 3. The single polycrystalline silicon having self-aligned silicide electrodes according to claim 2, characterized in that the sidewall nitride film 5 is formed outside the emitter electrode to provide electrical insulation between the electrodes by the trench isolation oxide film 12. Bipolar device manufacturing method. 3. The polycrystalline silicon according to claim 2, wherein the formation of the sidewall nitride film 5 is performed until the exposed oxide film 23 and the nitride film 22 are exposed after the photolithography process defining the growth of the thermal oxide film 6 of the base polycrystalline silicon and the size of the device. A method for fabricating a single polysilicon bipolar device having a self-aligned salicide electrode, characterized in that the process is improved by anisotropic dry etching of silicon (1). The self-aligned silicide according to claim 2, wherein the deposition oxide film for forming the trench isolation oxide film 12 is etched by dry etching until the surface of the N + polycrystalline silicon 4 is exposed. A method of manufacturing a single polycrystalline silicon bipolar device having an electrode. ※ Note: The disclosure is based on the initial application.