KR930009809B1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
KR930009809B1
KR930009809B1 KR8503669A KR850003669A KR930009809B1 KR 930009809 B1 KR930009809 B1 KR 930009809B1 KR 8503669 A KR8503669 A KR 8503669A KR 850003669 A KR850003669 A KR 850003669A KR 930009809 B1 KR930009809 B1 KR 930009809B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR8503669A
Other languages
English (en)
Korean (ko)
Other versions
KR850008761A (ko
Inventor
Yasuhide Hayashi
Takayasu Kawamura
Original Assignee
Meidensha Electric Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Mfg Co Ltd filed Critical Meidensha Electric Mfg Co Ltd
Publication of KR850008761A publication Critical patent/KR850008761A/ko
Application granted granted Critical
Publication of KR930009809B1 publication Critical patent/KR930009809B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
KR8503669A 1984-05-29 1985-05-28 Semiconductor device Expired - Fee Related KR930009809B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP109164 1984-05-28
JP59109164A JPS60253269A (ja) 1984-05-29 1984-05-29 ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
KR850008761A KR850008761A (ko) 1985-12-21
KR930009809B1 true KR930009809B1 (en) 1993-10-11

Family

ID=14503270

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8503669A Expired - Fee Related KR930009809B1 (en) 1984-05-29 1985-05-28 Semiconductor device

Country Status (5)

Country Link
US (1) US4651188A (enExample)
EP (1) EP0165419B1 (enExample)
JP (1) JPS60253269A (enExample)
KR (1) KR930009809B1 (enExample)
DE (1) DE3585302D1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
US6245615B1 (en) * 1999-08-31 2001-06-12 Micron Technology, Inc. Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction
US6383871B1 (en) * 1999-08-31 2002-05-07 Micron Technology, Inc. Method of forming multiple oxide thicknesses for merged memory and logic applications
DE102004040524B4 (de) * 2004-08-20 2006-06-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristor mit gleichmäßigem Zündverhalten
US8829336B2 (en) 2006-05-03 2014-09-09 Rochester Institute Of Technology Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813572B1 (enExample) * 1969-12-01 1973-04-27
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
DE2422748C3 (de) * 1974-05-10 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
FR2299727A1 (fr) * 1975-01-28 1976-08-27 Alsthom Cgee Thyristor a caracteristiques de commutation ameliorees
JPS5598871A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor
US4268848A (en) * 1979-05-07 1981-05-19 Motorola, Inc. Preferred device orientation on integrated circuits for better matching under mechanical stress
JPS5835973A (ja) * 1981-08-28 1983-03-02 Meidensha Electric Mfg Co Ltd 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPS59109163A (ja) * 1982-12-16 1984-06-23 Iseki & Co Ltd 果実の除袋装置

Also Published As

Publication number Publication date
JPS60253269A (ja) 1985-12-13
JPH0543192B2 (enExample) 1993-06-30
KR850008761A (ko) 1985-12-21
EP0165419A2 (en) 1985-12-27
EP0165419A3 (en) 1988-01-20
DE3585302D1 (de) 1992-03-12
EP0165419B1 (en) 1992-01-29
US4651188A (en) 1987-03-17

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