KR930009725U - 웨이퍼의 저압 증착장치 - Google Patents
웨이퍼의 저압 증착장치Info
- Publication number
- KR930009725U KR930009725U KR2019910017064U KR910017064U KR930009725U KR 930009725 U KR930009725 U KR 930009725U KR 2019910017064 U KR2019910017064 U KR 2019910017064U KR 910017064 U KR910017064 U KR 910017064U KR 930009725 U KR930009725 U KR 930009725U
- Authority
- KR
- South Korea
- Prior art keywords
- low pressure
- deposition equipment
- pressure deposition
- wafer low
- wafer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019910017064U KR940007175Y1 (ko) | 1991-10-14 | 1991-10-14 | 웨이퍼의 저압 증착장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019910017064U KR940007175Y1 (ko) | 1991-10-14 | 1991-10-14 | 웨이퍼의 저압 증착장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930009725U true KR930009725U (ko) | 1993-05-26 |
KR940007175Y1 KR940007175Y1 (ko) | 1994-10-14 |
Family
ID=19320543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019910017064U KR940007175Y1 (ko) | 1991-10-14 | 1991-10-14 | 웨이퍼의 저압 증착장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940007175Y1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100442419B1 (ko) * | 2001-07-24 | 2004-07-30 | 주식회사 크레젠 | 반도체 제조장치 |
-
1991
- 1991-10-14 KR KR2019910017064U patent/KR940007175Y1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100442419B1 (ko) * | 2001-07-24 | 2004-07-30 | 주식회사 크레젠 | 반도체 제조장치 |
Also Published As
Publication number | Publication date |
---|---|
KR940007175Y1 (ko) | 1994-10-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20040920 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |