KR930001745B1 - 전원 멀티플렉서 스위치 및 그 스위칭방법 - Google Patents

전원 멀티플렉서 스위치 및 그 스위칭방법 Download PDF

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Publication number
KR930001745B1
KR930001745B1 KR1019840007193A KR840007193A KR930001745B1 KR 930001745 B1 KR930001745 B1 KR 930001745B1 KR 1019840007193 A KR1019840007193 A KR 1019840007193A KR 840007193 A KR840007193 A KR 840007193A KR 930001745 B1 KR930001745 B1 KR 930001745B1
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KR
South Korea
Prior art keywords
voltage line
switching means
stb
multiplexer switch
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019840007193A
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English (en)
Korean (ko)
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KR850003645A (ko
Inventor
크리스 듀잇 비.
Original Assignee
모토로타 인코포레이티드
빈센트 죠셉 로너
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Application filed by 모토로타 인코포레이티드, 빈센트 죠셉 로너 filed Critical 모토로타 인코포레이티드
Publication of KR850003645A publication Critical patent/KR850003645A/ko
Application granted granted Critical
Publication of KR930001745B1 publication Critical patent/KR930001745B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Electronic Switches (AREA)
  • Power Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019840007193A 1983-11-17 1984-11-16 전원 멀티플렉서 스위치 및 그 스위칭방법 Expired - Lifetime KR930001745B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US83-552933 1983-11-17
US552,933 1983-11-17
US06/552,933 US4556804A (en) 1983-11-17 1983-11-17 Power multiplexer switch and method

Publications (2)

Publication Number Publication Date
KR850003645A KR850003645A (ko) 1985-06-20
KR930001745B1 true KR930001745B1 (ko) 1993-03-12

Family

ID=24207412

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007193A Expired - Lifetime KR930001745B1 (ko) 1983-11-17 1984-11-16 전원 멀티플렉서 스위치 및 그 스위칭방법

Country Status (3)

Country Link
US (1) US4556804A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS60120420A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR930001745B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686388A (en) * 1985-03-12 1987-08-11 Pitney Bowes Inc. Integrated circuit substrate bias selection circuit
JP2628631B2 (ja) * 1986-04-09 1997-07-09 アポロ精工株式会社 ワイヤストリツパー装置及びこれを用いた自動配線装置
US5272393A (en) * 1987-11-24 1993-12-21 Hitachi, Ltd. Voltage converter of semiconductor device
US4937477A (en) * 1988-01-19 1990-06-26 Supertex, Inc. Integrated mos high-voltage level-translation circuit, structure and method
JP2600753B2 (ja) * 1988-02-03 1997-04-16 日本電気株式会社 入力回路
WO1991002408A1 (en) * 1989-07-28 1991-02-21 Dallas Semiconductor Corporation Line-powered integrated circuit transceiver
US5107149A (en) * 1990-12-18 1992-04-21 Synaptics, Inc. Linear, continuous-time, two quadrant multiplier
ATE134082T1 (de) * 1991-11-11 1996-02-15 Philips Electronics Nv Anordnung zum liefern elektrischer energie zu einer last
DE69417622T2 (de) * 1993-04-30 1999-09-09 Stmicroelectronics Spannungskomparator mit einer Summierung von auf dem Bandgap-Prinzip beruhenden Gleichströmen und diesen enthaltender Versorgungsspannungsschalter
US5406140A (en) * 1993-06-07 1995-04-11 National Semiconductor Corporation Voltage translation and overvoltage protection
JP2727921B2 (ja) * 1993-08-13 1998-03-18 日本電気株式会社 半導体集積回路装置
JP3566745B2 (ja) * 1994-01-25 2004-09-15 新日本製鐵株式会社 電圧変換装置
US5594381A (en) * 1994-04-29 1997-01-14 Maxim Integrated Products Reverse current prevention method and apparatus and reverse current guarded low dropout circuits
US5650672A (en) * 1995-09-25 1997-07-22 Xilinx Inc High-voltage power multiplexor
US6163044A (en) 1998-02-18 2000-12-19 Micron Technology, Inc. Method and circuit for lowering standby current in an integrated circuit
US6859074B2 (en) * 2001-01-09 2005-02-22 Broadcom Corporation I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off
US6847248B2 (en) * 2001-01-09 2005-01-25 Broadcom Corporation Sub-micron high input voltage tolerant input output (I/O) circuit which accommodates large power supply variations
SE520306C2 (sv) * 2001-01-31 2003-06-24 Ericsson Telefon Ab L M Regulator för en halvledarkrets
US7138836B2 (en) * 2001-12-03 2006-11-21 Broadcom Corporation Hot carrier injection suppression circuit
CN112100117A (zh) * 2019-06-18 2020-12-18 北京小米移动软件有限公司 电源复用电路、数据信号的切换方法及装置、电子设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936676A (en) * 1974-05-16 1976-02-03 Hitachi, Ltd. Multi-level voltage supply circuit for liquid crystal display device
JPS5227400A (en) * 1975-08-27 1977-03-01 Sharp Corp Power source device
JPS55149871A (en) * 1978-07-31 1980-11-21 Fujitsu Ltd Line voltage detector
US4295176A (en) * 1979-09-04 1981-10-13 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit protection arrangement
US4463270A (en) * 1980-07-24 1984-07-31 Fairchild Camera & Instrument Corp. MOS Comparator circuit
US4384350A (en) * 1980-11-03 1983-05-17 Fairchild Camera & Instrument Corp. MOS Battery backup controller for microcomputer random access memory
EP0061513B1 (de) * 1981-04-01 1984-10-10 Deutsche ITT Industries GmbH Integrierte Auswahlschaltung in CMOS-Technik für vier Potentiale und deren Vereinfachung für drei Potentiale
US4513212A (en) * 1982-07-22 1985-04-23 Electronics Pty. Ltd. Automatic P-well clamping for CMOS integrated circuit
US4473758A (en) * 1983-02-07 1984-09-25 Motorola Inc. Substrate bias control circuit and method

Also Published As

Publication number Publication date
JPS60120420A (ja) 1985-06-27
JPH0451093B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-08-18
US4556804A (en) 1985-12-03
KR850003645A (ko) 1985-06-20

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