KR930001489A - TFT manufacturing method using double insulating film - Google Patents

TFT manufacturing method using double insulating film Download PDF

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Publication number
KR930001489A
KR930001489A KR1019910010608A KR910010608A KR930001489A KR 930001489 A KR930001489 A KR 930001489A KR 1019910010608 A KR1019910010608 A KR 1019910010608A KR 910010608 A KR910010608 A KR 910010608A KR 930001489 A KR930001489 A KR 930001489A
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KR
South Korea
Prior art keywords
insulating film
double insulating
tft manufacturing
depositing
patterning
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Application number
KR1019910010608A
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Korean (ko)
Inventor
최종일
Original Assignee
이헌조
주식회사 금성사
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Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910010608A priority Critical patent/KR930001489A/en
Publication of KR930001489A publication Critical patent/KR930001489A/en

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Abstract

내용 없음No content

Description

이중 절연막을 사용한 TFT 제조방법TFT manufacturing method using double insulating film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명 TFT의 공정단면도.2 is a process cross-sectional view of a TFT of the present invention.

Claims (2)

글래스(1)위에 크롬(2)을 증착하고 패터닝하여 게이트를 형성하는 공정과, 상기 게이트가 형성된 표면위에 SiNx(3), SiO2(4), a-Si:H(5), n+-a-Si:H(6)를 PECVD로 연속 증착하는 공정과, 상기 n+-a-Si:H(6)와a-Si:H(5)를 마스킹 공정에 의해 패터닝하는 공정과, 상기 전표면위에 크롬(7)을 증착하고 패터닝하여 드레인과 소오스를 형성하는 공정과, 상기 크롬(7)이 식각되어 드러난 부분의 n+-a-Si:H(6)를 건식 식각으로 선택적 제거하는 공정을 차례로 실시하여서 이루어짐을 특징으로 하는 이중 절연막을 사용한 TFT 제조방법.Depositing and patterning chromium (2) on the glass (1) to form a gate, and SiN x (3), SiO 2 (4), a-Si: H (5), n + on the gated surface a process of continuously depositing -a-Si: H (6) by PECVD, patterning the n + -a-Si: H (6) and a-Si: H (5) by a masking process, and Depositing and patterning chromium (7) on the entire surface to form a drain and a source, and selectively removing n + -a-Si: H (6) in the portion exposed by etching the chromium (7) by dry etching A TFT manufacturing method using a double insulating film, characterized in that the step is performed in sequence. 제1항에 있어서, SiO2(4)는 SiH4와 N2O가스를 사용하여 증착시킴을 특징으로 하는 이중 절연막을 사용한 TFT 제조방법.The method of manufacturing a TFT using a double insulating film according to claim 1, wherein SiO 2 (4) is deposited using SiH 4 and N 2 O gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910010608A 1991-06-25 1991-06-25 TFT manufacturing method using double insulating film KR930001489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910010608A KR930001489A (en) 1991-06-25 1991-06-25 TFT manufacturing method using double insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010608A KR930001489A (en) 1991-06-25 1991-06-25 TFT manufacturing method using double insulating film

Publications (1)

Publication Number Publication Date
KR930001489A true KR930001489A (en) 1993-01-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910010608A KR930001489A (en) 1991-06-25 1991-06-25 TFT manufacturing method using double insulating film

Country Status (1)

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KR (1) KR930001489A (en)

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