KR920701531A - 단결정 제조장치 - Google Patents
단결정 제조장치Info
- Publication number
- KR920701531A KR920701531A KR1019910701501A KR910701501A KR920701531A KR 920701531 A KR920701531 A KR 920701531A KR 1019910701501 A KR1019910701501 A KR 1019910701501A KR 910701501 A KR910701501 A KR 910701501A KR 920701531 A KR920701531 A KR 920701531A
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- raw material
- crucible
- storage container
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims 6
- 239000002994 raw material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims 3
- 239000004809 Teflon Substances 0.000 claims 2
- 229920006362 Teflon® Polymers 0.000 claims 2
- 239000013590 bulk material Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2051326A JPH03252386A (ja) | 1990-03-02 | 1990-03-02 | 単結晶製造装置 |
JP90-51326 | 1990-03-02 | ||
PCT/JP1991/000273 WO1991013192A1 (en) | 1990-03-02 | 1991-03-01 | Single crystal production apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
KR920701531A true KR920701531A (ko) | 1992-08-12 |
Family
ID=12883798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910701501A Withdrawn KR920701531A (ko) | 1990-03-02 | 1991-03-01 | 단결정 제조장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH03252386A (enrdf_load_html_response) |
KR (1) | KR920701531A (enrdf_load_html_response) |
DE (1) | DE4190411T1 (enrdf_load_html_response) |
WO (1) | WO1991013192A1 (enrdf_load_html_response) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2754104B2 (ja) * | 1991-10-15 | 1998-05-20 | 信越半導体株式会社 | 半導体単結晶引上用粒状原料供給装置 |
US5997234A (en) * | 1997-04-29 | 1999-12-07 | Ebara Solar, Inc. | Silicon feed system |
JP5145014B2 (ja) * | 2007-03-29 | 2013-02-13 | シャープ株式会社 | 固体材料処理装置 |
MY166030A (en) * | 2011-04-20 | 2018-05-21 | Gtat Ip Holding Llc | Side feed system for czochralski growth of silicon ingots |
US10202704B2 (en) | 2011-04-20 | 2019-02-12 | Gtat Ip Holding Llc | Side feed system for Czochralski growth of silicon ingots |
CN104264229B (zh) * | 2014-10-09 | 2016-08-24 | 河北晶龙阳光设备有限公司 | 一种单晶炉在线掺杂装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0523580Y2 (enrdf_load_html_response) * | 1987-02-27 | 1993-06-16 | ||
JPH01282194A (ja) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | 単結晶製造方法 |
-
1990
- 1990-03-02 JP JP2051326A patent/JPH03252386A/ja active Pending
-
1991
- 1991-03-01 WO PCT/JP1991/000273 patent/WO1991013192A1/ja active Application Filing
- 1991-03-01 KR KR1019910701501A patent/KR920701531A/ko not_active Withdrawn
- 1991-03-01 DE DE19914190411 patent/DE4190411T1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO1991013192A1 (en) | 1991-09-05 |
JPH03252386A (ja) | 1991-11-11 |
DE4190411T1 (enrdf_load_html_response) | 1992-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19911101 |
|
PG1501 | Laying open of application | ||
PC1203 | Withdrawal of no request for examination | ||
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |