KR920022445A - Metal wiring film formation method - Google Patents

Abstract

No content.

Description

Metal wiring film formation method

Since this is an open matter, no full text was included.

2A to 2F are process flowcharts showing one embodiment of a method for forming a metal wiring film according to the present invention.

Claims (15)

A method for forming a metal wiring film, the method comprising: forming a plug after filling a contact hole formed in an insulating layer on a semiconductor substrate with amorphous silicon to form a plug, and then forming a metal wiring film. The method of claim 1, wherein the contact hole is formed so that its aspect ratio is 1.5 or more. The method of claim 2, wherein the forming of the plug comprises: forming a first amorphous silicon layer after the contact hole is formed; Forming a second amorphous silicon layer on the first amorphous silicon layer to be filled; implanting impurities into the second amorphous silicon layer; and etching back the first and second amorphous silicon layers to form the contact hole. A method for forming a metal wiring film, comprising the step of leaving amorphous silicon inside. The method of claim 3, wherein the first amorphous silicon layer is formed to a thickness of about 500 kPa to about 2000 kPa at 550 ° C. using a low pressure chemical vapor growth apparatus. The method of claim 4, wherein the implanting the impurity into the first amorphous silicon layer is performed twice with different energy and dose. The method of claim 5, wherein in the second impurity implantation process, the first impurity implantation is implanted with phosphorus of 5 × 10 ¹⁵ to 5 × 10 ¹⁶ ions / cm ² at an energy of 30-60 keV and the second impurity. A method for forming a metal wiring film, characterized in that the ion is implanted with phosphorus of 1 × 10 ^{15 to} 5 × 15 ¹⁵ ions / cm ² at an energy of 80 to 150 keV. 7. The method of claim 6, wherein the second amorphous silicon layer is formed to a thickness of about 1500Å-5500Å at 550 ° C using a low pressure chemical vapor growth apparatus. The method of claim 7, wherein the implanting the impurity into the second amorphous silicon layer is performed by ion implanting phosphorus of 1 × 10 ¹⁵ to 5 × 10 ¹⁶ ions / cm ^{2 with} an energy of 50-150 keV. Wiring film formation method. 9. The method of claim 8, wherein the metal wiring film is formed by sequentially forming a metal barrier layer and a metal layer after the amorphous silicon plug is formed. Forming an insulating layer on the semiconductor substrate; Forming a contact hole in the insulating worm; Forming a first amorphous silicon layer on the entire surface obtained through the steps; Implanting impurities twice into the first amorphous silicon layer by varying energy and dose; Forming a second amorphous silicon layer on the first amorphous silicon layer to fill the contact hole after the second impurity implantation process; Implanting impurities into the second amorphous silicon layer; Etching back the first and second amorphous silicon layers to leave an amorphous silicon plug only in the contact hole; And forming a metal wiring film on the entire exposed surface after the amorphous silicon plug is formed. The method of claim 10, wherein the contact hole is formed even if its aspect ratio is 1.5 or more. The method of claim 11, wherein the first amorphous silicon layer is formed to a thickness of about 500 kPa to about 2000 kPa at 550 ° C. using a low pressure chemical vapor growth apparatus. The method of claim 12, wherein in the second impurity implantation step, the first impurity implantation is 5 × 10 ¹⁵ to 5 × 10 ¹⁶ ions / cm ² of phosphorus at an energy of 30 to 60 keV, and the second impurity implantation is 80 A method for forming a metal interconnection film comprising ion implantation of phosphorus of 1 × 10 ^{15 to} 5 × 15 ¹⁵ ions / cm ^{2 with} an energy of ˜150 keV, respectively. 15. The method of claim 13, wherein the second amorphous silicon layer is formed to a thickness of about 1500Å-5500Å at 550 ° C using a low pressure chemical vapor growth apparatus. ^{15. The} metal of claim 14, wherein the impurity is implanted into the second amorphous silicon layer by ion implantation of 1 × 10 ¹⁵ to 5 × 10 ¹⁵ ions / cm ^{2 with} energy of 50 to 150 keV. Wiring film formation method. ※ Note: The disclosure is based on the initial application.