KR920021744A - Crystal Growth Method - Google Patents

Crystal Growth Method Download PDF

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Publication number
KR920021744A
KR920021744A KR1019920007708A KR920007708A KR920021744A KR 920021744 A KR920021744 A KR 920021744A KR 1019920007708 A KR1019920007708 A KR 1019920007708A KR 920007708 A KR920007708 A KR 920007708A KR 920021744 A KR920021744 A KR 920021744A
Authority
KR
South Korea
Prior art keywords
crystal growth
growth method
melt surface
adjusting
opening
Prior art date
Application number
KR1019920007708A
Other languages
Korean (ko)
Inventor
히로시 마찌다
Original Assignee
노사까 가즈히꼬
치치부시멘트 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노사까 가즈히꼬, 치치부시멘트 가부시끼가이샤 filed Critical 노사까 가즈히꼬
Publication of KR920021744A publication Critical patent/KR920021744A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Abstract

내용 없음.No content.

Description

결정육성 방법Crystal Growth Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 결정 육성 방법에 사용되는 융액표면(融液表面)흐름을 조정하는 기구의 전체 사시도,1 is an overall perspective view of a mechanism for adjusting melt surface flow used in the crystal growth method of the present invention;

제2도는 결정 육성 방법에 관한 설명도,2 is an explanatory diagram of a method for growing a crystal,

제3도는 융액표면 흐름을 조정하는 기구의 다른 실시예의 전체 사시도.3 is an overall perspective view of another embodiment of a mechanism for adjusting melt surface flow.

Claims (3)

쵸크랄스키스법 (CZ법)에 의하여 원료 융액으로부터 단결정을 생성하는 결정육성 방법에 있어서, 융액표면에 융액표면 흐름을 조정하는 기구를 설치하는 것을 특징으로하는 결정육성방법.A crystal growth method for producing single crystals from a raw material melt by the Czochralskis method (CZ method), the crystal growth method comprising providing a mechanism for adjusting the melt surface flow on the melt surface. 제1항에 있어서, 상기 융액표면 흐름을 조절하는 기구가 통형상을 갖는 벽면을 가지며 상기 벽면에는 개구부가 설치되는것을 특징으로 하는 결정 육성방법.The crystal growth method according to claim 1, wherein the mechanism for adjusting the melt surface flow has a wall having a cylindrical shape, and an opening is provided in the wall. 제2항에 있어서 상기 개구부의 형상이 슬릿인 것을 특징으로 하는 결정육성방법.The crystal growth method according to claim 2, wherein the shape of the opening is a slit. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920007708A 1991-05-07 1992-05-07 Crystal Growth Method KR920021744A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-131870 1991-05-07
JP3131870A JPH05105579A (en) 1991-05-07 1991-05-07 Method for growing crystal

Publications (1)

Publication Number Publication Date
KR920021744A true KR920021744A (en) 1992-12-18

Family

ID=15068064

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920007708A KR920021744A (en) 1991-05-07 1992-05-07 Crystal Growth Method

Country Status (5)

Country Link
JP (1) JPH05105579A (en)
KR (1) KR920021744A (en)
DE (1) DE4214795A1 (en)
FR (1) FR2676236A1 (en)
RU (1) RU2079581C1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3123170B2 (en) * 1991-12-12 2001-01-09 信越半導体株式会社 Single crystal pulling device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669298A (en) * 1979-11-13 1981-06-10 Nec Corp Method of growing single crystal of semiconductor
DE3316547C2 (en) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Cold crucible for melting non-metallic inorganic compounds
JPS61132583A (en) * 1984-11-30 1986-06-20 Fujitsu Ltd Production of semiconductor single crystal
JPS63215587A (en) * 1987-03-02 1988-09-08 Sumitomo Electric Ind Ltd Production of single crystal
JPH0269386A (en) * 1988-09-01 1990-03-08 Sumitomo Electric Ind Ltd Device for growing single crystal
JPH02311390A (en) * 1989-05-25 1990-12-26 Sumitomo Electric Ind Ltd Device for producing single crystal

Also Published As

Publication number Publication date
RU2079581C1 (en) 1997-05-20
FR2676236A1 (en) 1992-11-13
DE4214795A1 (en) 1992-11-12
JPH05105579A (en) 1993-04-27

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