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Application filed by 문정환, 금성일렉트론 주식회사filedCritical문정환
Priority to KR1019910005964ApriorityCriticalpatent/KR920020742A/en
Publication of KR920020742ApublicationCriticalpatent/KR920020742A/en
반도체 장치의 기준 전극 제조방법Manufacturing method of reference electrode of semiconductor device
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도(a)-(g)는 본 발명에 따른 제조공정도이다.2 (a)-(g) are manufacturing process diagrams according to the present invention.
Claims (1)
소자가 형성된 기판상의 질화막을 기준 전극 형성부분만 식각하는 공정과, 전면에 MoSi를 도포한 후 상기 기준 전극 형성부분을 포함하는 소정의 영역만 남기고 나머지 상기 MoSi를 제거하는 공정과, 전면에 백금을 도포한 후 상기 남겨진 MoSi를 포함하는 부분만 남기고 나머지 상기 백금을 제거하는 공정으로 이루어진 반도체 장치의 기준 전극 제조 방법.Etching only the reference electrode forming portion of the nitride film on the substrate on which the device is formed, removing MoSi on the entire surface after applying MoSi to the entire surface, and removing the remaining MoSi, leaving platinum on the entire surface A method of manufacturing a reference electrode of a semiconductor device, the process comprising removing the remaining platinum after leaving a portion containing the remaining MoSi after coating.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910005964A1991-04-131991-04-13
Manufacturing method of reference electrode of semiconductor device
KR920020742A
(en)