KR890017795A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR890017795A
KR890017795A KR1019880005991A KR880005991A KR890017795A KR 890017795 A KR890017795 A KR 890017795A KR 1019880005991 A KR1019880005991 A KR 1019880005991A KR 880005991 A KR880005991 A KR 880005991A KR 890017795 A KR890017795 A KR 890017795A
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KR
South Korea
Prior art keywords
film
semiconductor device
manufacturing
glass film
water glass
Prior art date
Application number
KR1019880005991A
Other languages
Korean (ko)
Other versions
KR920002198B1 (en
Inventor
이수천
김원주
김병준
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR8805991A priority Critical patent/KR920002198B1/en
Publication of KR890017795A publication Critical patent/KR890017795A/en
Application granted granted Critical
Publication of KR920002198B1 publication Critical patent/KR920002198B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

내용 없음No content

Description

반도체 장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

첨부도면은 본 발명의 반도체장치의 제조공정도.The accompanying drawings show a manufacturing process of the semiconductor device of the present invention.

Claims (2)

실리콘 기판 또는 제 1 금속배선막(1)위에만 선택적으로 도포할 수 있는 접촉구 선택 매몰 텅스텐을 도포시키는 방법에 있어서, 실리콘기판 또는 제 1 금속배선막(1)상에 산화막(2)과 물유리막(3)을 순차적으로 도포시키고, 이방성 건식식각방법으로 산화막(2)과 물유리막(3)을 동시에 식각시켜 접촉구(6)을 형성하며, 상기 형성된 접촉구(6)에 선택 텅스텐막(4)을 성장시킬때 물유리막(3)위에 생성되는 텅스텐 핵(5)을 물유리막(3)의 식각공정시 동시에 제거하는 것을 특징으로 하는 반도체 장치의 제조방법.In a method for applying a contact hole selection tungsten that can be selectively applied only on a silicon substrate or the first metal wiring film 1, the oxide film 2 and the water on the silicon substrate or the first metal wiring film 1 are applied. The glass film 3 is sequentially applied and the oxide film 2 and the water glass film 3 are simultaneously etched by an anisotropic dry etching method to form a contact hole 6, and the selected tungsten film ( 4) A method of manufacturing a semiconductor device, characterized in that at the time of etching, the tungsten nucleus (5) generated on the water glass film (3) is simultaneously removed during the etching process of the water glass film (3). 제 1 항에 있어서, 상기 물유리막(3)을 습식식각방법에 의해 전면식각시키는 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the water glass film (3) is entirely etched by a wet etching method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR8805991A 1988-05-21 1988-05-21 Semiconductor device KR920002198B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR8805991A KR920002198B1 (en) 1988-05-21 1988-05-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR8805991A KR920002198B1 (en) 1988-05-21 1988-05-21 Semiconductor device

Publications (2)

Publication Number Publication Date
KR890017795A true KR890017795A (en) 1989-12-18
KR920002198B1 KR920002198B1 (en) 1992-03-19

Family

ID=19274585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8805991A KR920002198B1 (en) 1988-05-21 1988-05-21 Semiconductor device

Country Status (1)

Country Link
KR (1) KR920002198B1 (en)

Also Published As

Publication number Publication date
KR920002198B1 (en) 1992-03-19

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