KR920018861A - Dry Etching Equipment - Google Patents

Dry Etching Equipment Download PDF

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Publication number
KR920018861A
KR920018861A KR1019920005095A KR920005095A KR920018861A KR 920018861 A KR920018861 A KR 920018861A KR 1019920005095 A KR1019920005095 A KR 1019920005095A KR 920005095 A KR920005095 A KR 920005095A KR 920018861 A KR920018861 A KR 920018861A
Authority
KR
South Korea
Prior art keywords
dry etching
etching apparatus
etching equipment
reaction chamber
gas
Prior art date
Application number
KR1019920005095A
Other languages
Korean (ko)
Other versions
KR960013143B1 (en
Inventor
야스오 타나카
마사시 후쿠다
히로시 오구라
토시미찌 이시다
이찌로 나카야마
류조 호오찐
Original Assignee
다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 다니이 아끼오, 마쯔시다덴기산교 가부시기가이샤 filed Critical 다니이 아끼오
Publication of KR920018861A publication Critical patent/KR920018861A/en
Application granted granted Critical
Publication of KR960013143B1 publication Critical patent/KR960013143B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음No content

Description

드라이에칭 장치Dry Etching Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 제1실시예에 있어서의 드라이에칭 장치를 표시한 개요도.1 is a schematic diagram showing a dry etching apparatus according to a first embodiment of the present invention.

제2도는 피처리기판의 처리매수와 더스트수와의 관계를 표시한 그래프.2 is a graph showing the relationship between the number of treated substrates and the number of dust on a substrate.

제3도는 본 발명의 제2실시예에 있어서의 드라이에칭장치를 표시한 개요도.3 is a schematic diagram showing a dry etching apparatus according to a second embodiment of the present invention.

Claims (4)

염소계가스 또는 브롬계 가스를 사용하는 드라이에칭 장치에 있어서, 반응실내의 표면의 적어도 측벽면을 알루마이트 처리한 알루미늄 재질로 하는 것을 특징으로 하는 드라이에칭 장치.A dry etching apparatus using a chlorine-based gas or a bromine-based gas, wherein the dry etching apparatus is made of anodized aluminum at least the sidewall surface of the surface of the reaction chamber. 제1항에 있어서, 상기 반응실내의 측벽면을 알루마이트 처리한 알루미늄계 커버로 구성한 것을 특징으로 하는 드라이에칭 장치.The dry etching apparatus according to claim 1, wherein the side wall surface of the reaction chamber is constituted by an anodized aluminum cover. 제1항에 있어서, 상기 반응실내의 측벽면의 온도를 10℃ 이상 40℃이하로 제어하는 것을 특징으로 하는 드라이에칭 장치.The dry etching apparatus according to claim 1, wherein the temperature of the side wall surface in the reaction chamber is controlled to 10 ° C or more and 40 ° C or less. 염소계 가스 또는 브롬계 가스를 사용하는 에칭장치에 있어서, 상부전극의 온도를 40℃ 이상으로 제어하는 것을 특징으로 하는 드라이에칭 장치.An etching apparatus using a chlorine gas or a bromine gas, wherein the temperature of the upper electrode is controlled to 40 ° C. or higher. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019920005095A 1991-03-28 1992-03-27 Apparatus for dry etching KR960013143B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-64159 1991-03-28
JP3064159A JPH04299529A (en) 1991-03-28 1991-03-28 Dry etching device

Publications (2)

Publication Number Publication Date
KR920018861A true KR920018861A (en) 1992-10-22
KR960013143B1 KR960013143B1 (en) 1996-09-30

Family

ID=13250013

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920005095A KR960013143B1 (en) 1991-03-28 1992-03-27 Apparatus for dry etching

Country Status (2)

Country Link
JP (1) JPH04299529A (en)
KR (1) KR960013143B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4876641B2 (en) * 2006-03-09 2012-02-15 東京エレクトロン株式会社 Plasma processing equipment
US7758718B1 (en) * 2006-12-29 2010-07-20 Lam Research Corporation Reduced electric field arrangement for managing plasma confinement

Also Published As

Publication number Publication date
KR960013143B1 (en) 1996-09-30
JPH04299529A (en) 1992-10-22

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