KR920018834A - 탄화규소질 지그 - Google Patents

탄화규소질 지그 Download PDF

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Publication number
KR920018834A
KR920018834A KR1019920005174A KR920005174A KR920018834A KR 920018834 A KR920018834 A KR 920018834A KR 1019920005174 A KR1019920005174 A KR 1019920005174A KR 920005174 A KR920005174 A KR 920005174A KR 920018834 A KR920018834 A KR 920018834A
Authority
KR
South Korea
Prior art keywords
silicon carbide
jig
machined
jig according
carbide jig
Prior art date
Application number
KR1019920005174A
Other languages
English (en)
Inventor
후꾸지 마쓰모또
미찌오 하야시
노리아끼 하마야
Original Assignee
가네가와 가즈히로
신에쓰 가가꾸 고오교오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가네가와 가즈히로, 신에쓰 가가꾸 고오교오 가부시끼가이샤 filed Critical 가네가와 가즈히로
Publication of KR920018834A publication Critical patent/KR920018834A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

Abstract

내용 없음

Description

탄화규소질 지그
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 구조체예에 따른 지그의 사시도.
제2도는 제1도의 X부분 확대 단면도.
제3도는 제1도의 Y부분 확대 단면도.

Claims (6)

  1. 표면이 기계가공되어 지그로 조립되고 접합되는 다수의 소결된 탄화규소 부재로 이루어지는 것을 특징으로 하는 탄화규소질 지그.
  2. 제1항에 있어서, 상기 부재가 봉 및/또는 판상으로된 것을 특징으로 하는 탄화규소질 지그.
  3. 제1항에 있어서, 상기 부재가 ＃60 또는 그 보다 더 가는 입도의 연마휠을 사용하는 연마기로 최대 표면조도 Rmax가 15㎛일 정도로 기계 가공되는 것을 특징으로 하는 탄화규소질 지그.
  4. 다수의 소결된 탄화규소 부재 표면을 기계가공하는 단계와 그 부재를 지그로 조립하고 접합하는 단계로 이루어지는 것을 특징으로 하는 탄화 규소질 지그의 제조방법.
  5. 제1항에 있어서, 상기 부재가 봉 및/또는 판상으로된 것을 특징으로 하는 탄화 규소질 지그의 제조방법.
  6. 제1항에 있어서, 상기 부재가 ＃60또는 그 보다 더 가는 입도의 연마 휠을 사용하는 연마기로 최대 표면조도 Rmax가 15㎛일 정도로 기계가공 되는 것을 특징으로 하는 탄화규소질 지그의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920005174A 1991-03-28 1992-03-28 탄화규소질 지그 KR920018834A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-89673 1991-03-28
JP3089673A JPH04300262A (ja) 1991-03-28 1991-03-28 炭化珪素質治具

Publications (1)

Publication Number Publication Date
KR920018834A true KR920018834A (ko) 1992-10-22

Family

ID=13977272

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920005174A KR920018834A (ko) 1991-03-28 1992-03-28 탄화규소질 지그

Country Status (3)

Country Link
EP (1) EP0506052A1 (ko)
JP (1) JPH04300262A (ko)
KR (1) KR920018834A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111892419A (zh) * 2020-08-03 2020-11-06 福赛特(唐山)新材料有限公司 一种高抗震性碳化硅舟及其制备方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300205A1 (de) * 1993-01-07 1994-07-14 Deutsche Bundespost Telekom Probenhalterung in Kassettenform
DE4428169C2 (de) * 1994-08-09 1996-07-11 Steag Micro Tech Gmbh Träger für Substrate
US6074442A (en) * 1994-10-28 2000-06-13 Shin-Etsu Handotai Co., Ltd. Method of separating slice base mounting member from wafer and jig adapted therefor
TW325588B (en) * 1996-02-28 1998-01-21 Asahi Glass Co Ltd Vertical wafer boat
JPH09293685A (ja) * 1996-02-28 1997-11-11 Asahi Glass Co Ltd 縦型ウエハボート
JPH09306980A (ja) * 1996-05-17 1997-11-28 Asahi Glass Co Ltd 縦型ウエハボート
US6225594B1 (en) 1999-04-15 2001-05-01 Integrated Materials, Inc. Method and apparatus for securing components of wafer processing fixtures
WO2000063952A1 (en) * 1999-04-15 2000-10-26 Integrated Materials, Inc. Silicon fixtures for wafer processing and method of fabrication
US6196211B1 (en) 1999-04-15 2001-03-06 Integrated Materials, Inc. Support members for wafer processing fixtures
US6205993B1 (en) 1999-04-15 2001-03-27 Integrated Materials, Inc. Method and apparatus for fabricating elongate crystalline members
US7055702B1 (en) * 2000-06-06 2006-06-06 Saint-Gobain Ceramics & Plastics, Inc. Slip resistant horizontal semiconductor wafer boat
US6455395B1 (en) 2000-06-30 2002-09-24 Integrated Materials, Inc. Method of fabricating silicon structures including fixtures for supporting wafers
US6450346B1 (en) 2000-06-30 2002-09-17 Integrated Materials, Inc. Silicon fixtures for supporting wafers during thermal processing
KR100749403B1 (ko) * 2006-09-13 2007-08-14 최인성 중앙집중식 진공청소 시스템의 커넥터용 마개
TWI361469B (en) * 2007-03-09 2012-04-01 Rohm & Haas Elect Mat Chemical vapor deposited silicon carbide articles
US20230111655A1 (en) * 2020-02-07 2023-04-13 Kyocera Corporation Wafer boat

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111892419A (zh) * 2020-08-03 2020-11-06 福赛特(唐山)新材料有限公司 一种高抗震性碳化硅舟及其制备方法

Also Published As

Publication number Publication date
EP0506052A1 (en) 1992-09-30
JPH04300262A (ja) 1992-10-23

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